The present invention is directed to an assembly for use in detecting an analyte in a sample based on thin-film spectral interference. The assembly includes a light source to emit light signals; a light detector to detect light signals; a coupler to optically couple the light source and the light detector to a waveguide tip; a monolithic substrate having a coupling side and a sensing side; and a lens between the waveguide tip and the monolithic substrate. The lens relays optical signals between the waveguide tip and the monolithic substrate.

A film thickness measurement device 1A includes a light emission unit 10 for emitting light onto a measurement object 100, a light detection unit 20A for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unit 30A for determining the film thickness of a first film 102 by comparing measured spectral reflectance obtained based on the detection result in the light detection unit 20A with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unit 30A compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first film 102 based on the theoretical spectral reflectance closest to the measured spectral reflectance.

An optical metrology device is capable of detection of any combination of photoluminescence light, specular reflection of broadband light, and scattered light from a line across the width of a sample. The metrology device includes a first light source that produces a first illumination line on the sample. A scanning system may be used to scan an illumination spot across the sample to form the illumination line. A detector collects the photoluminescence light emitted along the illumination line. Additionally, a broadband illumination source may be used to produce a second illumination line on the sample, where the detector collects the broadband illumination reflected along the second illumination line. A signal collecting optic may collect the photoluminescence light and broadband light and focus it into a line, which is received by an optical conduit. The output end of the optical conduit has a shape that matches the entrance of the detector.

A system for measuring a thickness of a coating arranged on an anode substrate includes an optical measurement system configured to transmit a light signal having a known first polarization toward the anode substrate through the coating such that the light signal is reflected from the surface of the anode substrate, a detection module positioned to receive the reflected light signal and configured to determine a second polarization of the reflected light signal that is different from the first polarization and measure a polarization difference between the first polarization and the second polarization, and a measurement module configured to receive the measured polarization difference, calculate the thickness of the coating based on the measured polarization difference, and generate an output based on the calculated thickness.

A method for measuring the thickness of coatings on a substrate of an aerospace component comprises illuminating a sample comprising the substrate of the aerospace component and a coating with light waves of varying wavelengths from a light source, receiving the light waves reflected by the sample at a light collector, diffracting the light waves into a plurality of component wavelengths with a grating, detecting the light intensities of the plurality of component wavelengths at a detector array, generating a reflectance spectral curve using the detected light intensities for each of the plurality of component wavelengths, calculating the thickness of the coating from the reflectance spectral curves of the component wavelengths.

The invention relates to a terahertz (THz) apparatus for transmitting and/or receiving THz radiation, comprising at least one THz element, which is designed to transmit and/or receive THz radiation, and a digital data processing device, wherein in particular the digital data processing device is designed to at least temporarily process a first signal of at least one component of the apparatus.

Disclosed is a thin film characteristic measuring apparatus, which is used for measuring the thickness or width of a thin film of an object to be examined. The thin film characteristic measuring apparatus comprises a light source, a first reflecting mirror, a first actuator and a lens assembly. The lens assembly is formed so that the angle formed by an optical axis and a chief ray of the rays transmitted through the lens assembly is less than or equal to the angle formed by the optical axis and a chief ray of the rays incident to the lens assembly. The light source can comprise superluminescent diodes (SLD). Provided is the thin film characteristic measuring apparatus, which enables the light transmitted through the lens assembly to reciprocate on an incident surface of the object to be examined while the first reflecting mirror repeatedly tilts within a predetermined angle range, and thus can accurately measure a relatively large area and can variously control a position to be measured, a method and the like.

A non-destructive opto-acoustic metrology device detects the presence and location of non-uniformities in a film stack that includes a large number, e.g., 50 or more, transparent layers. A transducer layer at the bottom of the film stack produces an acoustic wave in response to an excitation beam. A probe beam is reflected from the layer interfaces of the film stack and the acoustic wave to produce an interference signal that encodes data in a time domain from destructive and constructive interference as the acoustic wave propagates upward in the film stack. The data may be analyzed across the time domain to determine the presence and location of one or more non-uniformities in the film stack. An acoustic metrology target may be produced with a transducer layer configured to generate an acoustic wave with a desired acoustic profile based on characteristics of the film stack.

A system includes a memory, and at least one processing device, operatively coupled to the memory, to facilitate an etch recipe development process by performing operations including obtaining, from an optical detector, first material thickness data for a first material and second material thickness data for a second material resulting from an iteration of an etch process using an etch recipe. The first material is located at a first reflectometry measurement point and the second material is located at a second reflectometry measurement point different from the first reflectometry measurement point. The operations further include determining one or more etch parameters based on at least the first material thickness data and the second material thickness data.

An etching method of etching apparatus is disclosed. The etching apparatus performs an etching process on a material to be processed which includes a material layer and a mask layer formed on the material layer. The etching method includes the following steps. The mask layer is etched. A light intensity at a specific wavelength for light generated is detected when the etching process is performed on the mask layer to be processed and an end point detection signal is generated. An etching completion time of the mask layer to be etched is determined according to the end point detection signal. A thickness of the mask layer to be etched is calculated according to the etching completion time. An etching time of the material layer is adjusted according to the thickness of the mask layer to be etched. The material layer is etched after adjusting the etching time.