Grating-coupled surface plasmon resonance response of a calibration grating is used to calibrate the azimuth angle offset between a sample on the stage and the plane of incidence (POI) of the optical system of an optical metrology device. The calibration grating is configured to produce grating-coupled surface plasmon resonance in response to the optical characteristics of the optical metrology device. The calibration grating is coupled to the stage and positioned at a known azimuth angle with respect to the optical channel of the optical metrology device while the grating-coupled surface plasmon resonance response of the calibration grating is measured. The azimuth angle between an orientation of the calibration grating and the POI of the optical system is determined based on the grating-coupled surface plasmon resonance response. The determined azimuth angle may then be used to correct for an azimuth angle offset between the sample and the POI.

Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Methods and systems for determining metrology-like information for a specimen using an inspection tool are provided. One method includes determining first process information for first feature(s) formed in first area(s) on a specimen from output generated by output acquisition subsystem(s) that include an inspection subsystem. The method also includes determining second process information for second feature(s) formed in second area(s) on the specimen from the output and at least a portion of the first process information. At least a portion of the second process information is a different type of information than the first process information. At least a portion of a design for the second feature(s) is different than a design for the first feature(s), and the first area(s) and the second area(s) are mutually exclusive on the specimen.

In the embodiment in association with the present disclosure, an apparatus and method for multilayer thin film thickness measurement using single-shot angle-resolved spectral reflectometry are provided which allow simultaneously obtaining the absolute reflectance and phase data of a measurement object over a broad wavelength range and wide incident angle according to various polarization states by a single-shot measurement.

Full wafer in-situ metrology chambers and methods of use are described. The metrology chambers include a substrate support and a sensor bar that are rotatable relative to each other. The sensor bar includes a plurality of sensors at different radii from a central axis.

A reflectometer or ellipsometer integrated with a processing tool includes a source module configured to generate a input beam, and a first mirror arranged to receive the input beam. The first mirror is configured to collimate the input beam and direct the input beam toward an aperture plate. The aperture plate has at least two apertures. One of the at least two apertures is arranged to define a measurement beam from a portion of the input beam, and one of the at least two apertures is arranged to define a reference beam from a portion of the input beam. An optical element is arranged within an optical path of the reference beam and outside an optical path of the measurement beam. The optical element is configured to direct the reference beam toward a third mirror. A second mirror is arranged to receive the measurement beam and focus the measurement beam through a window and onto a surface of a sample. The window forms part of a chamber of the processing tool and the sample is disposed within the chamber. At least a portion of the measurement beam is reflected from the surface of the sample as a reflected beam. The second mirror is arranged to receive the reflected beam and direct the reflected beam toward the optical element. The optical element is configured to direct the reflected beam toward the third mirror. The third mirror is arranged to receive the reference beam and the reflected beam and focus the reference beam and the reflected beam onto a collection plane.

A two-degree-of-freedom heterodyne grating interferometry measurement system, comprising: a single-frequency laser device for emitting a single-frequency laser, and the single-frequency laser can be split into a beam of reference light and a beam of measurement light; an interferometer mirror group and a measurement grating for forming a reference interference signal and a measurement interference signal from the reference light and the measurement light; and a receiving optical fiber for receiving the reference interference signal and the measurement interference signal, wherein a core diameter of the receiving optical fiber is smaller than a width of an interference fringe of the reference interference signal and the measurement interference signal, so that the receiving optical fiber receives a part of the reference interference signal and the measurement interference signal. The measurement system has advantages of insensitivity to grating rotation angle error, small volume, light weight, and a facilitating arrangement.

Provided is an ellipsometer including a polarizing optical device configured to separate light, reflected from a sample that is irradiated with illumination light comprising a linearly polarized light, into a first linearly polarized light in a first polarization direction and a second linearly polarized light in a second polarization direction that is orthogonal to the first polarization direction, and a light-receiving optical system configured to calculate an Ψ and Δ, an amplitude ratio and a phase difference of the two polarized light respectively, from an interference fringe formed by interference between the first linearly polarized light and the second linearly polarized light after passing through an analyzing device with transmission axis different from the first polarization direction and the second polarization direction.

A reflectometer or ellipsometer integrated with a processing tool includes a source module configured to generate a input beam, and a first mirror arranged to receive the input beam. The first mirror is configured to collimate the input beam and direct the input beam toward an aperture plate. The aperture plate has at least two apertures. One of the at least two apertures is arranged to define a measurement beam from a portion of the input beam, and one of the at least two apertures is arranged to define a reference beam from a portion of the input beam. An optical element is arranged within an optical path of the reference beam and outside an optical path of the measurement beam. The optical element is configured to direct the reference beam toward a third mirror. A second mirror is arranged to receive the measurement beam and focus the measurement beam through a window and onto a surface of a sample. The window forms part of a chamber of the processing tool and the sample is disposed within the chamber. At least a portion of the measurement beam is reflected from the surface of the sample as a reflected beam. The second mirror is arranged to receive the reflected beam and direct the reflected beam toward the optical element. The optical element is configured to direct the reflected beam toward the third mirror. The third mirror is arranged to receive the reference beam and the reflected beam and focus the reference beam and the reflected beam onto a collection plane.

Prediction of a distribution of light in an illumination pupil of an illumination system includes identifying component(s) of the illumination system the adjustment of which affects this distribution and simulating the distribution based on a point spread function defined in part by the identified components. The point spread function has functional relationship with configurable setting of the illumination settings.