A monitoring system and method are presented for use in monitoring a target. The monitoring system comprises: an input utility for receiving input data comprising measured data indicative of optical response of the target measured under predetermined conditions and comprising phase data indicative of a two-dimensional profile of full phase of the optical response of the target in a predetermined two-dimensional parametric space including a two-dimensional range in which said target exhibits phase singularity; an analyzer module for processing said measured data and extracting at least one phase singularity signature of the target characterizing the target status, the phase singularity signature being formed by a number N of phase singularity points, each corresponding to a condition that the physical phase continuously accumulates a nonzero integer multiple m of 2 around said point.

A system for measuring a thickness of a coating arranged on an anode substrate includes an optical measurement system configured to transmit a light signal having a known first polarization toward the anode substrate through the coating such that the light signal is reflected from the surface of the anode substrate, a detection module positioned to receive the reflected light signal and configured to determine a second polarization of the reflected light signal that is different from the first polarization and measure a polarization difference between the first polarization and the second polarization, and a measurement module configured to receive the measured polarization difference, calculate the thickness of the coating based on the measured polarization difference, and generate an output based on the calculated thickness.

Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.

An optical metrology device produces beams of light with varying wavelengths in a spectral range for measurement of a sample that is at least partially transparent to the spectral range. The light is obliquely incident on the sample, where a portion of the light is reflected off the top surface and a portion is transmitted through the sample and is reflected off the bottom surface. The incident light and/or reflected light is polarized and a phase modulator, such as a photoelastic modulator or electrooptic modulator, is adjusted based on the wavelengths in each beam of light to produce a same retardation of polarization for each beam of light. The reflected light that is received by a detector does not include light reflected from the bottom surface of the sample. A characteristic of a buried structure below the top surface of the sample is determined using the detected reflected light.

Embodiments include automatic selection of sample values for optical metrology. An embodiment of a method includes providing a library parameter space for modeling of a diffracting structure using an optical metrology system; automatically determining by a processing unit a reduced sampling set from the library parameter space, wherein the reduced space is based on one or both of the following recommending a sampling shape based on an expected sample space usage, or recommending a sampling filter based on correlation between two or more parameters of the library parameter space; and generating a library for the optical metrology system using the reduced sampling set.

A coating system may include a coating chamber; a substrate holder to move a substrate along a motion path; and a sensor device in the coating chamber, wherein the sensor device is configured to move along the motion path, and wherein the sensor device is to perform a spectral measurement on the substrate.

Provided are an apparatus and method for measuring the shape and thickness of a transparent object. A light projecting section configured to output beams of light to a transparent object, a light receiving sensor configured to receive the beams of light that have passed through the transparent object, and a data processing section configured to analyze a received light signal in each light receiving element of the light receiving sensor are included. The light projecting section outputs, in parallel, output beams of light from a plurality of light sources, and the data processing section analyzes the received light signal in each light receiving element of the light receiving sensor and identifies a light source of any beam of light input into one light receiving element by using light source combination information that is stored in a storage section and that corresponds to a value of the received light signal. Moreover, shapes of both front and back surfaces of the transparent object are calculated by calculating a Mueller matrix representing a change in a state of a polarized beam of light output from each of the light sources of the light projecting section.

An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.