An optical measurement system includes a light source, a spectroscopic detector, a reference sample, a switching mechanism that switches between a first optical path through which a sample to be measured is irradiated with light from the light source and light produced at the sample is guided to the spectroscopic detector and a second optical path through which the reference sample is irradiated with light from the light source and light produced at the reference sample is guided to the spectroscopic detector, and a processing unit that calculates, by performing correction processing based on change between a first detection result at first time and a second detection result at second time, a measurement value of the sample from a third detection result provided from the spectroscopic detector as a result of irradiation of the sample with light from the light source at third time temporally proximate to the second time.

An interferometer and an imager may include a tunable light source, a beam splitter, a digital imager, and a processor system. The tunable light source may be configured to emit a beam. The beam splitter may be configured to direct the beam toward a sample with a floor surface and a raised surface feature. The digital imager may be configured to receive a reflected beam and to generate an image based on the reflected beam. The reflected beam may be a coherent addition of a first reflection of the beam off a reference plate and a second reflection of the beam off the raised surface feature and third reflection of the beam off the floor surface. The processor system may be coupled to the digital imager and may be configured to determine a distance between the reference surface and the feature surface based on the image. A second digital imager may also be configured to receive a reflected beam and scattered beam to generate a two-dimensional grayscale image of the surface based on these beams and may also be configured to receive fluorescent light generated by the incident light to generate a two-dimensional gray scale an image of the surface based on fluorescent emission.

A height detection apparatus successively changes the brightness of white light from a first level to a second level in accordance with a position of a Z stage and captures an image of interference light while moving a two-beam interference objective lens relative to a paste film in an optical axis direction, detects, as a focus position, a position of the Z stage where the intensity of interference light is highest in a period during which the brightness of white light is set to the first or second level, for each pixel of the captured image, and obtains the height of the paste film based on a detection result.

An interferometer and an imager may include a tunable light source, a beam splitter, a digital imager, and a processor system. The tunable light source may be configured to emit a beam. The beam splitter may be configured to direct the beam toward a sample with a floor surface and a raised surface feature. The digital imager may be configured to receive a reflected beam and to generate an image based on the reflected beam. The reflected beam may be a coherent addition of a first reflection of the beam off a reference plate and a second reflection of the beam off the raised surface feature and third reflection of the beam off the floor surface. The processor system may be coupled to the digital imager and may be configured to determine a distance between the reference surface and the feature surface based on the image. A second digital imager may also be configured to receive a reflected beam and scattered beam to generate a two-dimensional grayscale image of the surface based on these beams and may also be configured to receive fluorescent light generated by the incident light to generate a two-dimensional gray scale an image of the surface based on fluorescent emission.

Sensing systems include a tube defining a Fabry-Perot cavity and an optical fiber including a distal end disposed within the Fabry-Perot cavity and a proximal end. A corrodible material caps the Fabry-Perot cavity. Devices for sensing corrosion of downhole equipment include an optical fiber with a corrodible material disposed over a distal end of the optical fiber. Systems for sensing a condition in equipment include an optical fiber with a fiber Bragg grating proximate a distal end thereof and a mass of sensor material coupled to the distal end of the optical fiber. The mass of sensor material is suspended from above the fiber Bragg grating. Other systems for sensing a condition in a wellbore include an optical fiber and a plurality of fiber Bragg gratings along a length thereof. A plurality of sensor materials are coupled to the optical fiber and surround respective fiber Bragg gratings.

An interferometer having a fundamental beam generator, a first second harmonic generator, a waveplate, a second second harmonic generator, a harmonic separator, and a polarizing beam splitter, mounted uniaxially, (i.e., the components are aligned along one optical axis), wherein the interferometer is adapted to change a diameter of a beam to match a diameter of a sample, and to change the diameter of the beam back to its original diameter.

Provided is a processing state detection unit includes: a light emission detection unit configured to detect light emission of the plasma; a calculation unit configured to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

Disclosed are a testing apparatus and a testing method. When the testing apparatus is used to test a sample (11) to be tested, a first detection apparatus (21) and a second detection apparatus (22) can be switched by means of an objective lens switching apparatus (20), so as to acquire height information and structure information of the sample (11) to be tested. In the process, the sample (11) to be tested does not need to be transferred between testing apparatuses, thus, not only is pollution potentially created in the process of transferring the sample (11) to be tested avoided, and the probability of the sample (11) to be tested being polluted in the testing process reduced, but also a region to be tested of the sample (11) to be tested does not need to be determined repeatedly, improving the testing speed for the sample (11) to be tested.

An object is to allow for simple measurement of a bump height. There is provided. a device for measuring a bump height comprising: a light sensor provided with a light source and a light-receiving element and configured to irradiate a substrate including a seed layer, a resist layer formed on the seed layer and a bump formed in an opening of the resist layer, with light emitted from the light source and to detect reflected light that is reflected from the seed layer via the resist layer and reflected light that is reflected from the bump, by the light-receiving element; and a control device configured to calculate a height of the bump relative to the seed layer, based on the reflected light from the seed layer and the reflected light from the bump and to subtract an error caused by a refractive index of the resist layer from the height of the bump calculated based on the reflected lights, so as to correct the height of the bump.

When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.