A measuring system is disclosed which includes an electrolysis container, at least one mandrel contained in the electrolysis container and on which a coating is made by surface metallization, a liquid contained in the electrolysis container and containing a solution enabling the conductivity of the mandrel to be increased, more than one probe on the mandrel, enabling the conductivity of the mandrel to be measured, at least one first probe set enabling current to be transmitted onto the mandrel and allowing the current passing on it to be measured by means of an amperemeter located thereon, at least one second probe set enabling the voltage difference to be measured by a voltmeter.

Disclosed herein is an endpoint detection having an optical bundle configured to emit light through a ceiling of a processing chamber. The optical bundle has a plurality of fibers configured to transmit the light from a light source towards a substrate and is configured to receive light reflected from the substrate. The plurality of fibers include a first emitting fiber and a first receiving fiber. The first receiving fiber is radially disposed at a pairing angle from the first emitting fiber, and is configured to receive light emitted from the first emitting fiber. The plurality of fibers further include a second emitting fiber and a second receiving fiber. The second receiving fiber is radially disposed at the pairing angle from the second emitting fiber. The second receiving fiber is configured to receive light originating from the second emitting fiber. The pairing angle is between about 175 degrees and 185 degrees.

A height detection apparatus successively changes the brightness of white light from a first level to a second level in accordance with a position of a Z stage and captures an image of interference light while moving a two-beam interference objective lens relative to a paste film in an optical axis direction, detects, as a focus position, a position of the Z stage where the intensity of interference light is highest in a period during which the brightness of white light is set to the first or second level, for each pixel of the captured image, and obtains the height of the paste film based on a detection result.

A method for measuring the thickness of coatings on a substrate of an aerospace component comprises illuminating a sample comprising the substrate of the aerospace component and a coating with light waves of varying wavelengths from a light source, receiving the light waves reflected by the sample at a light collector, diffracting the light waves into a plurality of component wavelengths with a grating, detecting the light intensities of the plurality of component wavelengths at a detector array, generating a reflectance spectral curve using the detected light intensities for each of the plurality of component wavelengths, calculating the thickness of the coating from the reflectance spectral curves of the component wavelengths.

An apparatus for the implementation of a process for the continuous manufacturing of steel strips for packaging coated with a passivation layer is provided. An apparatus contains a transfer roller; a coating roller contacting the transfer roller, a surface of the coating roller having a plurality of hexagonally shaped cells with a line count being from 50 to 200 lines per centimeter and a volume being from 5.Math.10.sup.−6 to 10.Math.10.sup.−6 m.sup.3 per square meter of the coating roller surface; and a tank containing an aqueous passivation solution, the tank providing the aqueous passivation solution to the coating roller.

A thickness measuring apparatus for measuring the thickness of a workpiece held on a chuck table includes the followings: a light source configured to emit white light; an optical branching unit configured to branch, to a second optical path, reflected light applied from the light source to the workpiece held on the chuck table via a first optical path and reflected from the workpiece; a diffraction grating disposed in the second optical path; an image sensor configured to detect an optical intensity signal of light separated into each wavelength by the diffraction grating; and a thickness output unit configured to generate a spectral interference waveform on the basis of the optical intensity signal detected by the image sensor, determine the thickness on the basis of the spectral interference waveform, and output the thickness.

A method for determining material removal by an ion beam (3) on a test workpiece (7) which is disposed in a machining chamber (5) of a housing (6) of a device (1) for beam machining, wherein the test workpiece (7) has a substrate (8) and a layer (9) applied to the substrate. The method includes a) optically determining a layer thickness (d1) of the layer applied to the substrate, b) removing material of the layer from the test workpiece with the ion beam, c) optically determining the layer thickness (d2) of the layer applied to the substrate, and d) determining the material removal by comparing the layer thickness determined in step a) with the layer thickness determined in step c). Also disclosed is a device (1) for beam machining a workpiece (2) with which the method can be carried out.

A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

The present invention relates to a method and device for fast and accurate mapping of the thickness of a thin film (10), particularly on a silicon wafer. The method comprises of irradiating the thin film (10) with excitation radiation of at least two wavelengths, wherein a luminescent image is captured during irradiation. In a preferred embodiment, the silicon wafer can move, for example during transport on a belt in a production line. These procedures can be used for online diagnostics of silicon wafer thicknesses in the production of solar cells. Exemplary embodiments include a method and device for obtaining images of an entire silicon wafer and can provide quick feedback for process control if preferably connected to a computing unit.

A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.