A photon detection device, configured to couple to a multicore optical fibre, the device comprising a plurality of detection regions, each detection region being arranged to align with just a single core of the multicore optical fibre when the device is coupled to the multicore optical fibre.

A light microscope and a method for capturing images with a light microscope includes guiding illumination light to a sample; guiding detection light from the sample to a plurality of photon-counting sensor elements, which each successively capture a plurality of photon counts; forming a plurality of photon count distributions to be analyzed and at least one reference photon count distribution from the photon counts; calculating a similarity between each photon count distribution to be analyzed and the reference photon count distribution; and identifying sensor elements as overdriven as a function of the calculated similarity of the corresponding photon count distribution(s) to be analyzed.

The invention relates to a single photon detector device for detecting an optical signal comprising an optical fiber and at least one nanowire, wherein the optical fiber comprises a core area and a cladding area and is designed to conduct the optical signal along an optical axis, wherein, with respect to the optical axis, a first area of the optical fiber is an entrance area for the optical signal and a second area of the optical fiber is a detector area, and wherein the nanowire becomes superconducting at a predetermined temperature and is designed in the superconducting state to generate an output signal as a function of the optical signal. It is provided that in the detector area of the optical fiber the nanowire extends essentially along the optical axis of the optical fiber. A single photon detector device is thus provided which has a simple structure, a high efficiency, a high detection rate and a high spectral bandwidth.

A photon detecting component is provided. The photon detecting component includes a first waveguide and a detecting section. The detecting section includes a second waveguide; a detector, optically coupled with the second waveguide, configured to detect one or more photons in the second waveguide; an optical switch configured to provide an optical coupling between the first waveguide and the second waveguide when the detector is operational; and an electrical switch electrically coupled to the detector, wherein the electrical switch is configured to change state in response to the detector detecting one or more photons. The photon detecting component further includes readout circuitry configured to determine a state of the electrical switch of the detecting section.

Provided are a solid state imaging device, an imaging apparatus, and an imaging method that may acquire a desired image without using a frame memory. The solid state imaging device includes: a sensor unit that generates pulses at a frequency in accordance with a frequency of photon reception; a count unit that generates an image signal by counting the number of signals generated from the sensor unit; and a processing unit that performs a predetermined process on a count value obtained in acquisition of a first image signal, and the count unit combines a second image signal and a value obtained by performing a predetermined process on the count value obtained in the acquisition of the first image signal to generate a third image signal.

A photoelectric conversion apparatus includes a pixel including a photoelectric conversion circuit configured to output a signal corresponding to photon incidence. The photoelectric conversion apparatus further includes a first measurement circuit, an addition circuit, and a second measurement circuit. The first measurement circuit is configured to measure the signal output from the pixel. The addition circuit is configured to add measured values of a plurality of the first measurement circuits. The second measurement circuit is configured to measure a time from when each of the plurality of first measurement circuits starts measuring the signal to when the measured values added by the addition circuit reach a first threshold value.

An analog front-end circuit includes an array of pixel circuits. Each pixel circuit includes an event counter and a power consumption circuit. The event counter is configured to count photons incident at the pixel circuit. The power compensation circuit includes an event rate circuit and a current sink circuit. The event rate circuit is configured to determine a rate of photon detection events at the pixel circuit. The current sink circuit is configured to pass a compensation current selected based on the rate of photon detection events at the pixel circuit.

Techniques disclosed herein relate generally to photonic integrated circuits working at cryogenic temperatures. In one example, a device includes a substrate, a dielectric layer on the substrate, an optical waveguide in the dielectric layer, a superconducting circuit in the dielectric layer and coupled to the optical waveguide, and a micro-channel in the dielectric layer and adjacent to the superconducting circuit. The micro-channel is aligned with the superconducting circuit and is configured to conduct a liquid at a cryogenic temperature to locally cool the superconducting circuit.

A method and a system for fabricating superconducting nanowire single photon detector (SNSPD) is disclosed. The superconducting nanowire single photon detector consists of a thin film of superconducting material shaped into a meandering nanowire through nanofabrication processes. The pattern enables the nanowire to cover a wide surface area. The SNSPD is a type of near-infrared single-photon detector based on a current-biased superconducting nanowire. The method includes depositing a plurality of buffer layers on a substrate of a superconducting nanowire single photon detector using a pulsed laser deposition technique. The method further includes designing deposited buffer layer into a desired pattern of nanostrips and depositing a plurality of high temperature superconductor (HTS) on the desired pattern of nanostrips. To obtain the desired pattern, at least one of lithography and/or etching processes is used in the SNSPD.

The present technology relates to a light receiving element and a ranging system which achieve improvement of pixel characteristics while allowing variation in a breakdown voltage of an SPAD. The light receiving element includes a pixel array in which a plurality of pixels is arranged in a matrix, and a pixel driving unit configured to control respective pixels of the pixel array to be active pixels or non-active pixels. The pixel includes an SPAD, a transistor connected to the SPAD in series, an inverter configured to output a detection signal indicating incidence of a photon on the SPAD, a first transistor which is switched on or off in accordance with control of the pixels to be the active pixels or the non-active pixels, and a second transistor connected to the first transistor in series. The present technology is applicable to a ranging system that detects a range in a depth direction to a subject, for example.