An apparatus configured to alternate the application of first and second gate voltages to a gate electrode of a photodetector. A first change in electrical current is relative to a predetermined measurement of electrical current taken at the first gate voltage in the absence of incident electromagnetic radiation, and a second change in electrical current is relative to a predetermined measurement of electrical current taken at the second gate voltage in the absence of the incident electromagnetic radiation. The photodetector comprises a channel, and source and drain electrodes configured to enable flow of electrical current through the channel. Quantum dots are configured to generate charge carriers on exposure to the incident electromagnetic radiation. The gate electrode is configured to generate an electric field upon the application of a gate voltage thereto, and process the signal to at least partially remove any changes in electrical current which are attributed to noise.

Disclosed herein is a laser shooting target based on photoelectric conversion, simulated shooting sound, and voice broadcast. A front panel is the main support structure and includes a target window, a speaker and a light-emitting diode (LED) display window. The covers may be injection molded of nylon or other plastic material. A homogenizing filter of conventional optical design is included to amplify a laser target area for a photoelectric conversion circuit to collect the light (laser) signal, and to filter out any influence of ambient or stray light on the photodetector. A target ring is printed on the target surface for reference for aiming at the time of shooting. The LED display adopts a digital display for showing the results of effective shooting of target rings. The LED display photoelectric conversion circuit are coupled to an MCU processor having processor readable instructions for operation.

The present disclosure discloses a metamaterial based metal gate MOSFET detector with gate rasterized, comprising a metamaterial based metal gate MOSFET having a rasterized gate structure and various different grating pattern forms thereof, wherein a gate of the metal gate MOSFET is connected to a first bias resistor and a first bias voltage, a source of the metal gate MOSFET is grounded, a drain of the metal gate MOSFET is connected to a first DC blocking capacitor, the first DC blocking capacitor is connected to a low noise preamplifier, and a second bias resistor and a second bias voltage are connected between the low noise preamplifier and the first DC blocking capacitor. The technical solution according to the present disclosure can completely absorb terahertz waves of a specific frequency band and generate resonance.

Exemplary embodiments provide a simple, inexpensive, and easy-to-operate color capture device that can capture color information and transmit the captured color information to an interface device such as smartphone, where the captured color information is optionally processed and is then transmitted to a remote server for subsequent production of the customized cosmetic.

A light detection circuit and a detection method thereof, and a light detection device are provided. The light detection circuit including a pixel circuit, a control unit, a counter, and a processor. The pixel circuit includes a phototransistor, a switching transistor, and an output sub-circuit. A first terminal of the output sub-circuit, a first electrode of the phototransistor, and a first electrode of the switching transistor are coupled to a first node, a gate of the phototransistor is coupled to a gradual change signal input line, a gate of the switching transistor is coupled to a scan line, and a second electrode of the switching transistor is coupled to the counter. The control unit is configured to control the counter to start counting under the control of a scan signal and a synchronization signal.

A photodetector circuit includes: a photodetector transistor; a current output transistor; a switching transistor; and a first capacitor. The source of the photodetector transistor, the gate of the current output transistor, and the first terminal of the first capacitor are connected to one another. The source of the current output transistor, the drain of the switching transistor, and the second terminal of the first capacitor are connected to one another. The photodetector transistor has a drain connected to a reference potential line, and upon receiving light when the photodetector transistor is in an off state, the source of the photodetector transistor collects electric charges generated by an internal photoelectric effect. The current output transistor has a drain connected to a power line which can have a first power supply potential and a second power supply potential. The switching transistor has a source connected to a photodetection line.

An apparatus comprising at least one pair of a first inner and second outer photodetector, each photodetector comprising a channel member, respective source and drain electrodes configured to enable a flow of electrical current through the channel member between the source and drain electrodes, and a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation to produce a detectable change in the electrical current flowing through the channel member. The first inner and second outer photodetectors are configured to generate electron-hole pairs which produce an increase and decrease in electrical current through the channel members. The first inner and the second outer photodetectors share a common channel member, which is partitioned by one or more of the respective source and drain electrodes respectively extending in two dimensions such that the first inner photodetector is defined within the second outer photodetector.

The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

Exemplary embodiments provide a simple, inexpensive, and easy-to-operate color capture device that can capture color information and transmit the captured color information to an interface device such as smartphone, where the captured color information is optionally processed and is then transmitted to a remote server for subsequent production of the customized cosmetic.

The present embodiment relates to a photon detector which includes a preamplifier having a structure capable of preventing saturation of an amplifier. The preamplifier includes an amplifier, and further includes a capacitive element, an n-type MOSFET, and a p-type

MOSFET disposed on a plurality of wirings electrically connecting the input end side and the output end side of the amplifier. A control electrode of the n-type MOSFET is set to a first fixed potential V1, while a control electrode of the p-type MOSFET is set to a second fixed potential V2.