A complementary metal oxide semiconductor (CMOS) device embedded with microelectromechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the device using wafer-level vacuum packaging techniques. The cap includes an integrated focusing system with a metalens module for focusing IR radiation onto the sensors.

An infrared radiation detector includes an array of elementary imaging bolometric detectors, each of the elementary bolometric detectors being formed of a bolometric membrane including a film made of vanadium oxide VOx, having a resistivity in the range from 6 ohm.Math.cm to 50 ohm.Math.cm, said membrane being suspended above a substrate integrating a signal for reading out the signal generated by said elementary detectors and for sequentially addressing the elementary detectors. The detector includes at least one getter intended to ensure the trapping of residual gas during and after the forming of the detector, and includes a hermetically-sealed cavity having said array and said at least one getter housed therein, having an upper cap including a window transparent to infrared radiation, said cap being sealed by means of a seal on a chip supporting the array of elementary detectors or on a package at the bottom of which the chip supporting the array of elementary detectors has been attached, said cavity being under vacuum or a low pressure.

A MEMS device according to an example embodiment of the present disclosure includes: a lower substrate; an infrared sensor formed on the lower substrate; and a lower bonding pad disposed to cover the infrared sensor. The infrared sensor includes: a metal pad formed on an upper surface of the lower substrate and electrically connected to a detection circuit; a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band; an absorption plate disposed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; and an anchor formed on the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other. The reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer.

A method of monitoring the surface temperatures of wafers in real time by measuring them according to the present invention monitors the surface temperatures of a polishing pad in real time by measuring them, and can thus actively deal with irregular variations in temperature on the surface of the wafer attributable to chemical reaction and friction in the process of cleaning the wafer. A sensor for measuring the surface temperatures of a wafer according to the present invention can be used in an environment in which there is fume generated from a cleaning solution, and is responsible for temperatures at respective points of an infrared camera and allows the correction of temperatures in respective sections.

A thermographic sensor is proposed. The thermographic sensor includes a plurality of sensing elements each comprising at least one thermo-couple. The thermographic sensor is integrated on a semiconductor on insulator body that is patterned to define a grid suspended from a substrate; for each sensing element, the grid has a frame with the cold joint of the thermo-couple, a plate with the hot joint of the thermo-couple and one or more arms sustaining the plate from the frame. The frames include one or more conductive layers of thermally conductive material for thermally equalizing the cold joints with the substrate. Moreover, each sensing element may also include a processing circuit for the thermo-couple that is integrated on the corresponding frame. A thermographic device including the thermographic sensor and a corresponding signal processing circuit, and a system including one or more thermographic devices are also proposed.

The invention relates to a method for fabricating a detection device 1, comprising the following steps: forming a stack 10, comprising a thermal detector 20, a mineral sacrificial layer 15 and a thin encapsulation layer 16 having a lateral indentation 4; forming a stack 30, comprising a thin supporting layer 33, a getter portion 34 and a thin protective layer 35; directly bonding the thin supporting layer 33 to the thin encapsulation layer 16 so that the getter portion 34 is located in the lateral indentation 4; forming a vent 17, and eliminating the mineral sacrificial layer 15 and the thin protective layer 35; depositing a thin sealing layer 5, blocking the vent 17.

An optically powered cryogenic FPA with an optical data link eliminates electrical penetrations of the cryogenic chamber for power delivery thereby reducing heat leaks into the cold volume by copper wires and EMI. An optical splitter receives and separates an optical input signal into an optical carrier signal, an optical Data IN signal and an optical power signal. An optical-to-electrical (O/E) converter converts the optical power signal into an electrical power signal, which is converted into a plurality of DC voltage signals to supply power within the chamber. An optical data link modulates the optical carrier signal with electrical signals from the ROIC to form and output an optical Data OUT signal.

A wearable device includes a case and a far infrared temperature sensing device. The case has a first opening. The far infrared temperature sensing device is disposed inside the case of the wearable device. The far infrared temperature sensing device includes an assembly structure, a sensor chip, a filter structure, and a metal shielding structure. The assembly structure has an accommodating space and a top opening. The sensor chip is disposed in the accommodating space of the assembly structure. The filter structure is disposed above the sensor chip. The metal shielding structure is disposed above the sensor chip, and has a second opening to expose the filter structure. The first and second openings are communicated to cooperatively define a through hole.

A thermographic sensor is proposed. The thermographic sensor includes a plurality of sensing elements each comprising at least one thermo-couple. The thermographic sensor is integrated on a semiconductor on insulator body that is patterned to define a grid suspended from a substrate; for each sensing element, the grid has a frame with the cold joint of the thermo-couple, a plate with the hot joint of the thermo-couple and one or more arms sustaining the plate from the frame. The frames include one or more conductive layers of thermally conductive material for thermally equalizing the cold joints with the substrate. Moreover, each sensing element may also include a processing circuit for the thermo-couple that is integrated on the corresponding frame. A thermographic device including the thermographic sensor and a corresponding signal processing circuit, and a system including one or more thermographic devices are also proposed.

An optical sensor package includes an IC die including a light sensor element, an output node, and bond pads including a bond pad coupled to the output node. A leadframe includes a plurality of leads or lead terminals, wherein at least some of the plurality of leads or lead terminals are coupled to the bond pads including to the bond pad coupled to the output node. A mold compound provides encapsulation for the optical sensor package including for the light sensor element. The mold compound includes a polymer-base material having filler particles including at least one of infrared or terahertz transparent particle composition provided in a sufficient concentration so that the mold compound is optically transparent for providing an optical transparency of at least 50% for a minimum mold thickness of 500 μm in a portion of at least one of an infrared frequency range and a terahertz frequency range.