An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

A sensor device according to the present disclosure includes a Peltier element, a sensor element thermally connected to a cooling surface of the Peltier element, and a window member that faces a light receiving surface of the sensor element and is made of borosilicate glass.

Disclosed is an integrated circuit (IC) chip incorporating a temperature-sensitive element and temperature stabilization circuitry for ensuring that the temperature of the temperature-sensitive element (TSE) remains essentially constant. The IC chip comprises a temperature-sensitive element and, within at least one region adjacent to the temperature-sensitive element, a first circuit that radiates a first heat amount to the TSE and a second circuit that radiates a second heat amount to the TSE. The second circuit senses changes in a first current amount in the first circuit and, thereby changes in the first heat amount. In response to those changes, the second circuit also automatically adjusts a second current amount in the second circuit and, thereby the second heat amount in order to ensure that the total heat amount radiated by the first circuit and the second circuit, in combination, to the TSE remains constant. Also disclosed is an associated method.

An extended area cavity type blackbody for use as a radiometric reference for imaging systems may have a well in the form of a cube having four sidewalls and a back wall, and open at the front. The temperature of the back wall may be controlled independently of the temperature(s) of the sidewalls. This system may produce infrared radiance closer to an ideal radiator than typical extended area sources. A simple blackbody is disclosed, having a source plate with a front emitting surface; a ledge element disposed in front of and below the source plate for heating air in front of the source plate; and (optionally) another ledge element disposed in front of and above the source plate for cooling air in front of the source plate. A housing may support the source plate and ledge element, and a vent may be provided in front of and above the source plate. A resistive heater may be associated with the ledge element; and (optionally) TECs may be associated with the other (cooling) ledge element. Angles of the ledges may be adjustable to optimize the best uniformity for a particular implementation. Temperature control of the ledges may be in unison with or independent from the source plate.