Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.

The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.

The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.

A method of measuring temperature based upon a system of equations applying Stefan-Boltzmann's law and using a measurement value for an object to be measured and an ambient temperature value (Ta) comprises: pre-calculating (200, 202) a first vector (LUT1) and a second vector (LUT2). The first vector (LUT1) is a series of values proportional to received power based upon respective temperature values and in respect of a predetermined generic range of temperatures. The second vector (LUT2) is a series of sensitivity characteristic factor values based upon expected measured temperature values and in respect of a predetermined range of expected object measured temperatures. The first vector (LUT1) and the second vector (LUT2) are used (206) to generate a temporary vector (LUT.sub.T) of a series of values limited to the ambient temperature value to solve the system of equations in respect of the measurement value for the object, thereby determining (208) a temperature (To) for the object from the measurement value.

A sensing method for in-situ non-perturbing measurement of characteristics of laser beams at the exit of the laser beam delivery fiber tips include measuring power of a laser beam transmitted through delivery fiber tip in fiber-optics systems. A sensing devices for in-situ non-perturbing sensing and control of multiple characteristics of laser light transmitted through light delivery fiber tips includes a fiber-tip coupler comprised of a shell with enclosed delivery fiber having a specially designed angle-cleaved endcap and one or several tap fibers that are specially arranged and assembled at back side of the endcap and other variations. Methods and system architectures for in-situ non-perturbing control of characteristics of laser beams at the exit of the laser beam delivery fiber tips include fiber-tip couplers and sensing modules that receive laser light from tap fibers, and systems for optical processing to enhance light characteristics suitable for in-situ measurement.

Thermal imaging of heat sources in thermal processing systems for determination of workpiece temperature are provided. In one example, a thermal processing apparatus can include a processing chamber, a workpiece support, a plurality of heat sources configured to heat a workpiece, and at least one camera. The at least one camera can capture one or more images of thermal radiation of the plurality of heat sources during thermal treatment of the workpiece. In one example, a method for calibrating the camera can include obtaining the one or more images of thermal radiation of at least one heat source, obtaining one or more reference signals indicative of irradiation of the at least one heat source, and calibrating the camera based at least in part on a comparison between the one or more images of thermal radiation and the one or more reference signals indicative of irradiation of the heat source.

Thermal imaging of heat sources in thermal processing systems for determination of workpiece temperature are provided. In one example, a thermal processing apparatus can include a processing chamber, a workpiece support, a plurality of heat sources configured to heat a workpiece, and at least one camera. The at least one camera can capture one or more images of thermal radiation of the plurality of heat sources during thermal treatment of the workpiece. In one example, a method for calibrating the camera can include obtaining the one or more images of thermal radiation of at least one heat source, obtaining one or more reference signals indicative of irradiation of the at least one heat source, and calibrating the camera based at least in part on a comparison between the one or more images of thermal radiation and the one or more reference signals indicative of irradiation of the heat source.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

A thermal pixel configured as an electromagnetic emitter and/or an electromagnetic detector operating within a limited bandwidth. The thermal pixel comprises a micro-platform thermally isolated from a surrounding off-platform region by phononic nanowires. In embodiments, the micro-platform is comprised of metamaterial and/or photonic crystal filters providing operation over a limited bandwidth. In other embodiments, the micro-platform is comprised of nanotube structure providing a broadband emission/absorption spectral response. Structural configurations for the pixel take advantage of the Kirchhoff law of thermal radiation which states that a good thermal emitter is also a good absorber. In a preferred embodiment the pixel is fabricated using a silicon SOI starting wafer.