An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

An image sensor including includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

A thermal sensor, a thermal sensor array, an electronic apparatus including the thermal sensor, and an operating method of the thermal sensor are provided. The thermal sensor includes a first region onto which first infrared light is incident, a visible light radiation region configured to radiate visible light generated by incidence of the first infrared light on the first region, a second region onto which second infrared light is incident, and an image sensor configured to receive the visible light radiated from the visible light radiation region. The first region, the second region, and the visible light radiation region each include a nonlinear optical material.

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO.sub.2) thin film in monoclinic VO.sub.2 crystal phase by deposition of VO.sub.2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO.sub.2 thin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.

Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO.sub.2) thin film in monoclinic VO.sub.2 crystal phase by deposition of VO.sub.2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO.sub.2 thin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.

Focal Plane Arrays (FPAs) or methods to produce FPAs may be provided for a microbolometer based thermal imaging sensor utilizing wafer level processing (WLP) techniques for manufacture. Batch processing techniques for sealing a cap wafer to an FPA wafer to produce vacuum sealed FPAs may be accomplished with suitable FPA design features in conjunction with a glass frit seal methodology utilizing appropriate frit glass compositions.

An irradiating device for irradiating a machining field with a machining beam, in particular with a laser beam, for carrying out a welding process, is provided. The irradiating device includes a beam scanner for aligning the machining beam to a machining position in the machining field. The irradiating device has an imaging device for imaging a part-region of the machining field on a pyrometer which has at least two pyrometer segments. The imaging device images thermal radiation which emanates from the machining position in the machining field on a first pyrometer segment, and images thermal radiation which emanates from a position in the machining field being situated ahead of or behind the machining position along an advancing direction of the machining beam in the machining field on at least one second pyrometer segment. A machine tool having such an irradiating device is also provided.

An infrared imaging micro-bolometer integrates a membrane assembled in suspension on a substrate by support arms. The membrane includes an absorbing material configured to capture infrared radiations and a thermometric material connected to the absorbing material configured to perform a transduction of the infrared radiations captured by the absorbing material The thermometric material is arranged on a surface area smaller than 0.4 times a surface area of the membrane. The membrane also includes at least one central dielectric layer arranged between the absorbing material and the thermometric material. Recesses are formed in the absorbing material and in the at least one dielectric layer in portions of the membrane devoid of the thermometric material.