A thermal image sensor and a method of manufacturing the same are provided. A row electrode and a column electrode are formed on a substrate. A multi-layer stack includes a sensing layer, a first sensing electrode and a second sensing electrode which are in contact with the sensing layer with a channel formed between the first sensing electrode and the second sensing electrode, an absorbing electrode connected to the first sensing electrode, an insulating layer configured to insulate the absorbing electrode from the second sensing electrode and the sensing layer, and a protecting layer configured to cover an exterior. Supports are configured to allow the multi-layer stack to float with respect to the substrate. A first intervening electrode and a second intervening electrode are configured to connect the low electrode and the column electrode to the first sensing electrode and the second sensing electrode through the supports.

A temperature monitoring system includes a semiconductor member mounted onto the surface of an object having a surface whose temperature is to be monitored. The semiconductor member has a temperature-dependent bandgap with an absorption edge that varies with temperature. A light source is configured to illuminate the semiconductor member with monochromatic light. The monochromatic light has a wavelength equal to an absorption edge wavelength that is associated with the absorption edge when the semiconductor member is at a specified temperature. An imaging device is configured to receive light reflected from the semiconductor member when illuminated with the monochromatic light such that a surface temperature of the object is at the specified temperature when a change in an amount of reflected light that is received indicates that the wavelength of the monochromatic light is equal to the absorption edge wavelength at the specified temperature.