A method for determining a semiconductor temperature T.sub.j of a semiconductor element of a semiconductor module comprises ascertaining an estimated value of the semiconductor temperature T.sub.j using an optimizable model of a thermal behavior of the semiconductor module, reading a measured value of the semiconductor temperature T.sub.j, optimizing the optimizable model using the measured value, providing the estimated value of the semiconductor temperature T.sub.j, if the measured value is not available, and the measured value if the measured value is available for the point in time, and repeating the steps of the method for further points in time.

The temperature sensor includes a voltage generator and a temperature code generator. The voltage generator includes a first temperature element having a first resistance value and a second temperature element having a second resistance value and utilizes the first and second temperature elements to generate a temperature voltage signal having a voltage level that varies according to a variation in temperature. The voltage generator generates a reference voltage signal having a substantially constant voltage level regardless of the variation in temperature. The temperature code generator compares a voltage level of the temperature voltage signal with a voltage level of the reference voltage signal to generate a plurality of temperature code signals including information on the variation in temperature based on the comparison.

The temperature sensor includes a voltage generator and a temperature code generator. The voltage generator includes a first temperature element having a first resistance value and a second temperature element having a second resistance value and utilizes the first and second temperature elements to generate a temperature voltage signal having a voltage level that varies according to a variation in temperature. The voltage generator generates a reference voltage signal having a substantially constant voltage level regardless of the variation in temperature. The temperature code generator compares a voltage level of the temperature voltage signal with a voltage level of the reference voltage signal to generate a plurality of temperature code signals including information on the variation in temperature based on the comparison.

A temperature sensor includes a plurality of temperature coefficient voltage generators, one or more converters and at least one variable voltage or current source. The temperature coefficient voltage generators are used for generating multiple temperature coefficient voltages. The converters, coupled to the temperature coefficient voltage generators, are used for converting the temperature coefficient voltages to digital values. The at least one variable voltage or current source, each coupled to at least one of the temperature coefficient voltage generators, includes a first variable voltage or current source for outputting a first voltage or current in a first time period, and outputting a second voltage or current in a second time period, wherein the second voltage or current is different from the first voltage or current such that there exists a shift between a first voltage-temperature curve in the first time period and a second voltage-temperature curve in the second time period.

A time domain temperature sensor circuit includes a voltage generating circuit configured to generate and equalize a first voltage of a first node and a second voltage of a second node, a current generating circuit comprising a first semiconductor device connected between the first node and a ground, and configured to generate a first current, and a variable resistor circuit and a second semiconductor device connected in series between the second node and the ground, and configured to generate a second current, the variable resistor circuit being configured to vary a temperature gradient of the second current based on resistance variations by the variable resistor circuit, and a current mirror circuit configured to generate a third current by performing current mirroring of the second current and transmit the third current to an output terminal.

A temperature measuring device for measuring a temperature at or in an optical system of a lithography apparatus comprises: an activation source for generating a measurement current or a measurement voltage between a first and a second connection point of the activation source; a plurality of temperature resistors which comprise at a temperature resistor and a measurement temperature resistor, each temperature resistor between first and second line nodes; a first switching unit for selectively connecting the first connection point to a first line node; a voltage detection unit for detecting a voltage at the temperature resistors; a first line which electrically connects the second line node of the at least one reference temperature resistor and the second line node of the at least one measurement temperature resistor to a first connection point of the voltage detection unit; and a temperature determination unit.

A three-dimensional integrated circuit includes a first layer including at least one sensing element configured to output at least one temperature-dependent voltage; and a second layer disposed vertically with respect to the first layer and coupled to the first layer by at least one via. The second layer includes: a compare circuit configured to generate at least one intermediate voltage in response to comparing the at least one temperature-dependent voltage to a feedback voltage; a control circuit configured to generate at least one control signal in response to the intermediate voltage; and a switching circuit configured to couple a capacitor coupled to a feedback node to one of a first voltage supply and a second voltage supply in response to the at least one control signal to generate an output signal that is based on a temperature sensed by the sensing element.

A three-dimensional integrated circuit includes a first layer including at least one sensing element configured to output at least one temperature-dependent voltage; and a second layer disposed vertically with respect to the first layer and coupled to the first layer by at least one via. The second layer includes: a compare circuit configured to generate at least one intermediate voltage in response to comparing the at least one temperature-dependent voltage to a feedback voltage; a control circuit configured to generate at least one control signal in response to the intermediate voltage; and a switching circuit configured to couple a capacitor coupled to a feedback node to one of a first voltage supply and a second voltage supply in response to the at least one control signal to generate an output signal that is based on a temperature sensed by the sensing element.

A three-dimensional integrated circuit includes a first layer including at least one sensing element configured to output at least one temperature-dependent voltage; and a second layer disposed vertically with respect to the first layer and coupled to the first layer by at least one via. The second layer includes: a compare circuit configured to generate at least one intermediate voltage in response to comparing the at least one temperature-dependent voltage to a feedback voltage; a control circuit configured to generate at least one control signal in response to the intermediate voltage; and a switching circuit configured to couple a capacitor coupled to a feedback node to one of a first voltage supply and a second voltage supply in response to the at least one control signal to generate an output signal that is based on a temperature sensed by the sensing element.

A three-dimensional integrated circuit includes a first layer including at least one sensing element configured to output at least one temperature-dependent voltage; and a second layer disposed vertically with respect to the first layer and coupled to the first layer by at least one via. The second layer includes: a compare circuit configured to generate at least one intermediate voltage in response to comparing the at least one temperature-dependent voltage to a feedback voltage; a control circuit configured to generate at least one control signal in response to the intermediate voltage; and a switching circuit configured to couple a capacitor coupled to a feedback node to one of a first voltage supply and a second voltage supply in response to the at least one control signal to generate an output signal that is based on a temperature sensed by the sensing element.