A temperature sensor integrated type semiconductor pressure sensor apparatus includes a temperature detection device, a lead wire covered with a lead wire protection material, and a terminal, which are integrated together by a thermoplastic resin. This can prevent the lead wire from being deformed in the assembly process, thereby simplifying the assembly process. Furthermore, the temperature detection device is exposed from the opening at the tip of the protrusion, which can secure enough temperature response. Furthermore, the temperature detection device, the lead wire and the lead wire protection material are covered with the thermoplastic resin, so they are protected from combustion gas component, oil contaminant and corrosion product included in intake air.

A sensor device includes: a sensor portion having a movable thin film and a detection element configured to output a signal corresponding to displacement of the movable thin film; a frame portion disposed to surround an outside of the sensor portion; a circuit board including a circuit configured to process the signal output from the detection element; and a lid portion which is attached onto the frame portion and has a through-hole, in which a functional film having higher hydrophobicity than a surface of the lid portion is provided on at least an inner surface of the through-hole in the lid portion.

A pulse wave sensor unit includes a pressure sensor, and an adhesive tape to attach the pressure sensor to a measurement portion to be measured. The pressure sensor includes a diaphragm part, and an annular support part which supports the diaphragm part and has an aperture for allowing the diaphragm part to face the measurement portion, and a closed space is able to be formed between the diaphragm part and the measurement portion by attaching the pressure sensor to the measurement portion using the adhesive tape.

According to some embodiments, methods are provided to operate a base station of a wireless communication network. For example, parameters may be generated that define a plurality of potential PDCCH monitoring occasions and that define a plurality of paging occasions, wherein each one of the plurality of paging occasions includes a respective subset of the plurality of potential PDCCH monitoring occasions, wherein consecutive paging occasions are spaced apart in time with at least one of the potential PDCCH monitoring occasions therebetween not being included in any of the plurality of paging occasions. The parameters are transmitted over a radio interface to a wireless device. Related methods of operating wireless devices, related base stations, and related wireless devices are also discussed.

According to an example aspect of the present invention, there is provided a MEMS pressure sensor, comprising: a sensor portion comprising a deformable membrane and a first volume, and a valve portion comprising a first output to a first side of the pressure sensor and a second output to a second side of the pressure sensor. The valve portion is operable to close the second output and open the first output to equalize pressure in the first volume with pressure at the first side of the pressure sensor for calibrating the sensor; and close the first output and open the second output to equalize pressure in the first volume with pressure at the second side of the pressure sensor for pressure measurement.

A microfabricated pressure transducer is formed in a multilayer substrate by etching a plurality of shallow and deep wells into the layers, and then joining these wells with voids formed by anisotropic etching. The voids define a flexible membrane over the substrate which deforms when a force is applied.

A pressure sensor includes a substrate that has a diaphragm which bends and deforms by receiving pressure and a displacement regulating unit that regulates deformation of the diaphragm, in which the diaphragm and the displacement regulating unit are spaced away from each other in a first state where the diaphragm receives pressure within a measurable range, and the diaphragm and the displacement regulating unit come into contact with each other in a second state where the diaphragm receives pressure exceeding the measurable range.

The present invention provides a pressure change measuring apparatus and a pressure change measuring method, which are capable of detecting a change in pressure to be measured with respect to a time axis with high accuracy. Specifically, a reference value setting unit (60) included in a pressure change measuring apparatus (1) is configured to generate a reference value signal based on an output signal of a differential pressure measuring cantilever (4) under a predetermined state, and to output the reference value signal. An arithmetic processing unit (30) is configured to calculate the pressure change in pressure to be measured based on the output signal, the reference value signal, a volume of a cavity (10), a flowing quantity of a pressure transmission medium flowing into and out of the cavity (10) for every unit of a predetermined time period, and the like.

A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.

A pressure sensor includes an SOI substrate which has a first silicon layer, a second silicon layer placed on one side of the first silicon layer, and a silicon oxide layer placed between the first and second silicon layers, and a concave section which opens to the surface on the first silicon layer side of the SOI substrate, wherein in a plan view of the SOI substrate, a portion overlapping the concave section of the SOI substrate becomes a diaphragm which is flexurally deformed by receiving a pressure, and the second silicon layer is exposed on the bottom surface of the concave section.