A piezoelectric sensor includes a substrate, a meta-membrane adhered to the substrate, and a piezoelectric element adhered to the meta-membrane. The substrate includes a support frame which laterally surrounds and partly defines a recess and a cover film which overlies and partly defines the recess. The support frame supports the cover film along an entire periphery of the cover film. The meta-membrane is adhered to the cover film of the substrate. In accordance with one embodiment, the meta-membrane has an auxetic bi-axial kirigami honeycomb structure. In accordance with another embodiment, the meta-membrane has an auxetic hexagonal honeycomb structure. The meta-membrane is adhered to the substrate and to the piezoelectric element using elastic glue. In one proposed implementation, the substrate and meta-membrane are made of polycarbonate and the piezoelectric element comprises a piezoelectric substrate made of polyvinylidene fluoride.

A pressure detection structure and an electronic device are provided that improve sensitivity and accuracy of pressure detection. The pressure detection structure includes: N piezo-resistors connected at the first dielectric layer to form a Wheatstone bridge, where an opening of a first cavity is provided on the first surface of the substrate. The two ends, in a first direction, of the vertical projection of a first piezo-resistor among the N piezo-resistors on a contact surface between the N piezo-resistors and the first dielectric layer are located respectively on the two sides, in the first direction, of the vertical projection of the first cavity on the contact surface. The long side of a second piezo-resistor among the N piezo-resistors is perpendicular to the first direction, and the vertical projection of the second piezo-resistor on the contact surface does not overlap with the vertical projection of the first cavity.

A diaphragm pressure transducer includes a body having an outer surface and a diaphragm, a strain gauge including a resistive element located on the outer surface, a fluidic inlet, and a fluidic cavity enclosed by the body in fluidic communication with the fluidic inlet, the fluidic cavity having an upper surface. The diaphragm is located between the upper surface of the fluidic cavity and the outer surface of the body. The diaphragm includes a variable thickness across a region defined between the upper surface of the fluidic cavity and the outer surface located below the strain gauge.

A pressure sensing element, including a substrate, a device layer coupled to the substrate, a diaphragm being part of the device layer, and a plurality of piezoresistors coupled to the diaphragm. A plurality of bond pads is disposed on the device layer, and an electrical field shield is bonded to the top of device layer and at least one of the bond pads. At least one stress adjustor is part of the electrical field shield, where the stress adjustor is a cut-out constructed and arranged to reduce thermal hysteresis of the pressure sensing element caused by stress relaxation of the electrical field shield during a cooling and heating cycle. The stress adjustor may be a thin film deposited on top of the electrical field shield, which may apply residual stress to the piezoresistors. The pressure sensing element may include a cavity integrally formed as part of the substrate.

Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

A pressure sensing element, including a substrate, a device layer coupled to the substrate, a diaphragm being part of the device layer, and a plurality of piezoresistors coupled to the diaphragm. A plurality of bond pads is disposed on the device layer, and an electrical field shield is bonded to the top of device layer and at least one of the bond pads. At least one stress adjustor is part of the electrical field shield, where the stress adjustor is a cut-out constructed and arranged to reduce thermal hysteresis of the pressure sensing element caused by stress relaxation of the electrical field shield during a cooling and heating cycle. The stress adjustor may be a thin film deposited on top of the electrical field shield, which may apply residual stress to the piezoresistors. The pressure sensing element may include a cavity integrally formed as part of the substrate.

An apparatus includes a casing defining a fluid flow channel, the casing including one or more diaphragms each defining a portion of the fluid flow channel, a strain gauge disposed on one of the one or more diaphragms, the strain gauge having a characteristic responsive to a pressure of fluid in the fluid flow channel, a temperature-sensitive circuit element disposed on one of the one or more diaphragms, the temperature-sensitive circuit element having a characteristic responsive to a temperature of the fluid in the fluid flow channel, and temperature compensation circuitry electrically coupled to the strain gauge and to the temperature-sensitive circuit element.

Semiconductor MEMS pressure sensors that can produce a linear and large output signal when subject to a small pressure, without an increase to the front to back span error. One example can experience large deflections without causing catastrophic damage to the membrane. The pressure sensor can include a silicon layer having opposing surfaces, an etched pattern in of the surfaces of the silicon layer, and an etched cavity on the opposite surface of the silicon layer to form a membrane. The etched patterned can include a series of concentric stiffening ribs, an inverted boss, large depression areas next to the membrane edge and/or the boss, and piezoresistive strain concentrators. The ribs and depressions can be formed onto the silicon membrane by anisotropic or isotropic etch techniques. Piezoresistive devices can be diffused into the membrane in the regions near the strain concentrators to form a Wheatstone bridge or other measurement structure.

Aspects of the subject technology relate to an apparatus including a housing, one or more piezoresistive elements and a magnetic actuator. The housing includes a membrane, and the piezoresistive elements are disposed on the membrane to sense a displacement due to a deflection of the membrane. The magnetic actuator is disposed inside a cavity of the housing. The magnetic actuator exerts a repulsive force onto the membrane to reduce the deflection of the membrane.

Disclosed herein are force sensors which include a sense die assembly and methods for manufacturing the sense die assembly and the force sensor. The disclosed sense die assembly, force sensor, and methods utilize wafer-level retention to hold an actuation element in a cavity of the sense die.