A pressure sensor includes a pre-formed diaphragm located at the distal end of a pressure sensor. The diaphragm has a convex surface on a first side of the diaphragm which is exposed to a fluid to be measured. A strain gauge is attached to a second surface on the opposite side of the diaphragm. The diaphragm may be deformed to have the convex curvature on the first surface, and heat treated.

A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.

A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

A piezoelectric sensor includes a substrate, a meta-membrane adhered to the substrate, and a piezoelectric element adhered to the meta-membrane. The substrate includes a support frame which laterally surrounds and partly defines a recess and a cover film which overlies and partly defines the recess. The support frame supports the cover film along an entire periphery of the cover film. The meta-membrane is adhered to the cover film of the substrate. In accordance with one embodiment, the meta-membrane has an auxetic bi-axial kirigami honeycomb structure. In accordance with another embodiment, the meta-membrane has an auxetic hexagonal honeycomb structure. The meta-membrane is adhered to the substrate and to the piezoelectric element using elastic glue. In one proposed implementation, the substrate and meta-membrane are made of polycarbonate and the piezoelectric element comprises a piezoelectric substrate made of polyvinylidene fluoride.

In a microelectromechanical system (MEMS) pressure sensor, thin and fragile bond wires that are used in the prior art to connect a MEMS pressure sensing element to an application specific integrated circuit (ASIC) for the input and output signals between these two chips are replaced by stacking the ASIC on the MEMS pressure sensing element and connecting each other using conductive vias formed in the ASIC. Gel used to protect the bond wires, ASIC and MEMS pressure sensing element can be eliminated if bond wires are no longer used. Stacking the ASIC on the MEMS pressure sensing element and connecting them using conductive vias enables a reduction in the size and cost of a housing in which the devices are placed and protected.

A thin-film pressure sensor and an arrangement method thereof are provided. The thin-film pressure sensor includes a flat diaphragm and a first induction unit in the shape of a thin film arranged on the flat diaphragm, where the first induction unit includes m rotating multi-segment resistance wires arranged around the center of a circle of a circular deformation area of the flat diaphragm, m/2 rotating multi-segment resistance wires on one side are connected in series to form a second induction resistor, and m/2 rotating multi-segment resistance wires on the other side are connected in series to form a fourth induction resistor, where m is a multiple of 4; the arrangement method includes arrangement for the first induction unit. The radial strain and the tangential strain of the flat diaphragm can be fully utilized, and the detection sensitivity of the thin-film pressure sensor is improved.

An object of the present invention is to realize a pressure sensor with a small variation in sensor characteristics. The pressure sensor includes a diaphragm having longitudinal and lateral sides, and four strain gauges disposed on the diaphragm. The four strain gauges are arranged at a center of the diaphragm. Two of the four strain gauges are arranged along a lateral direction, and other two strain gauges are arranged along a longitudinal direction.

Aspects of the subject disclosure include a pressure-sensing device consisting of a housing including a membrane and one or more piezoresistive elements disposed on the membrane to sense a displacement due to a deflection of the membrane. A first set of electrodes is disposed over the membrane, and a second set of electrodes is disposed on a permeable port of the device at a distance from the membrane. The first and second sets of electrodes form an electrostatic actuator to exert a repulsive force onto the membrane to reduce the deflection of the membrane.

A pressure sensor die assembly for a differential pressure sensor comprises a base substrate including a first overpressure stop structure on a first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section that includes a first cavity and a second cavity surrounding the first cavity, and a second side opposite from the first side. A pressure sensing diaphragm portion is defined by the first cavity and is located over the first overpressure stop structure. An overpressure diaphragm portion is defined by the second cavity. A top cap coupled to the second side of the diaphragm structure includes a second overpressure stop structure. The overpressure stop structures are each sized to support substantially all of a strained area of the pressure sensing diaphragm portion at an increasing overpressure on the first or second sides of the diaphragm structure.

A pressure sensor includes a pressure sensing-element in fluid communication with a port and an oil separator in the port. The oil separator is configured to reduce an amount of oil-vapor residue that reaches the pressure sensing element by elongating a path of fluid from an opening of the port to the pressure sensing element and by creating additional surface area within the port upon which oil-vapor residue -may be deposited. There is also a cover, which has holes, and that is configured to prevent the oil separator from felling out of the port. The oil separator may include circular discs having cut-out portions. The cut-out portions on adjacent circular discs may he rotated relative to one another about a longitudinal axis of the oil separator. The cut-out portions may have a semi-circular shape.