A method for conducting optical measurement using a full Mueller matrix ellipsometer, which belongs to the technical field of optical measurements. The optical measurement method comprises: constructing an experimental optical path of a full Mueller matrix ellipsometer; conducting complete regression calibration on the full Mueller matrix ellipsometer; placing a sample to be measured on a sample platform, and obtaining an experimental Fourier coefficient of the sample to be measured; and according to the experimental Fourier coefficient of the sample to be measured, obtaining information about the sample to be measured. Since a calibration method for the full Mueller matrix ellipsometer is not only simple in operation process, but also makes full use of data of the full Mueller matrix ellipsometer measured at the same time, the introduced error is relatively small and the parameter obtained by calibration is more accurate, so that the measurement result is more accurate when the sample to be measured is measured. Thus, the process of the optical measurement method is simplified.

The present disclosure relates to an apparatus and method for measuring the thickness and refractive index of a multilayer thin film by measuring angle-resolved spectral reflectance according to light polarization. According to an exemplary embodiment of the present disclosure, the apparatus and method for measuring the thickness and refractive index of a multilayer structure using angle-resolved spectroscopic reflectometry is capable of measuring and analyzing thickness and refractive index of each layer of a structure having a multilayer thin film through an s-polarized imaging and a p-polarized imaging of the reflective light located in a back focal plane of an objective lens which are acquired through an angle-resolved spectral imaging acquisition part.

An imaging spectroscopic ellipsometry apparatus and method configured to measure thin films with high spatial resolution. The apparatus includes a rotating compensator that enables to simultaneously collect both spectrometric ellipsometric data and ellipsometric imaging with the use of the same measurement beam of light. Collecting both data sets simultaneously increases the information content for analysis and affords a substantial increase in measurement performance.

Various embodiments set forth techniques for characterizing films on optically clear substrates using ellipsometry. In some embodiments, a spectroscopic ellipsometer is configured to generate a light beam that has a relatively small spot size and is substantially absorbed by an optically clear substrate, thereby reducing or eliminating reflections from an interface between the substrate and air. Optical simulations can be performed to determine values for various parameters associated with the ellipsometer that minimize the reflections from the interface between the substrate and air and maximize reflections from an interface between a film and the substrate. In addition, graded films that include multiple layers can be analyzed using models of multiple layers.

A method for measuring a characteristic of a thin film is disclosed. The method includes a) obtaining a measured spectrum from a target region on the substrate by using a spectroscopic ellipsometer, b) obtaining a physical model capable of obtaining an estimated parameter value related to the characteristic of the thin film through regression analysis of the measured spectrum, c) obtaining a machine learning model capable of obtaining a reference parameter value related to the characteristic of the thin film by using the measured spectrum, and d) obtaining an integrated model which uses an integrated error function capable of considering both of a first error function and a second error function, and obtaining an optimum parameter value through regression analysis of the integrated model.

Provided is a method capable of precisely, reproducibly and directly measuring, by an ellipsometry method, optical constants (refractive index n, extinction coefficient κ) of a fluorine-containing organosilicon compound thin film having a homogeneous surface with a small surface roughness and haze value. The method for measuring the optical constants of the thin film of the fluorine-containing organosilicon compound, includes: a step of forming the thin film of the fluorine-containing organosilicon compound on a base material, the thin film having, as surface roughnesses, an arithmetic mean roughness of smaller than 1.0 nm and a root mean square roughness of smaller than 2.0 nm, a haze value of smaller than 0.3 and a film thickness of 3 to 10 nm; and a step of measuring the optical constants of the thin film formed on the base material by the ellipsometry method.

An ellipsometer includes a focusing system that uses an image of the measurement spot to determine a best focal position for the ellipsometer. The focus signal is produced by splitting off the ellipsometer measurement spot before the signal is analyzed by a polarizer thereby avoiding imagining the spot with a modulated intensity. The focus signal is imaged on a sensor array and based on the position of the spot on the sensor array, the focal position of the ellipsometer may be determined. A single image may be used to determine the focal position of the ellipsometer permitting a real time focus position measurement.

Methods for direct measurements of quantum relaxation time of electrons in a metal or conducting semiconductor, and of electron scattering rate of photo-induced carriers and other transport properties in intrinsic wide-bandgap semiconductors, through optical measurements. The measurement includes measuring complex dielectric function and calculating the imaginary part of the complex dielectric loss function

[00001]$-\mathrm{Im}\left(\frac{1}{\mathrm{.Math.}\left(\omega \right)}\right).$

The

[00002]$-\mathrm{Im}\left(\frac{1}{\mathrm{.Math.}\left(\omega \right)}\right)$

curve is analyzed to identify resonance peaks, and the peak position, peak height, and peak width are used to determine the screened plasma frequency ω.sub.s, background dielectric polarizability E.sub.c(G0.sub.s), and equivalent optical quantum relaxation time τ.sub.0 (ω.sub.s) or equivalent optical electron scattering rate γ.sub.0(ω.sub.s), respectively. Curve-fitting of the

[00003]$-\mathrm{Im}\left(\frac{1}{\mathrm{.Math.}\left(\omega \right)}\right)$

curve is performed based on an asymmetry of the peak in the vicinity of ω.sub.s, to ultimately obtain the quantum relaxation time or electron scattering rate, including both the DC term and the AC term at ω.sub.s.

A snapshot ellipsometer or polarimeter which does not require temporally modulated element(s) to measure a sample, but instead uses one or more spatially varying compensators, (eg. microretarder arrays and compound prisms), to vary the polarization state within a measurement beam of electromagnetic radiation. Analysis of an intensity profile of the beam after interaction with the spatially varying compensator(s) and the sample, and after having source beam wavelength content determined using a digital light processor, and/or being directed by a digital light processor elements toward elements in the detector, allows sample parameters to be characterized.

Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a surface of a substrate for determining in-situ ESE data therefrom during substrate processing, measuring a change of phase and amplitude in determined in-situ ESE data, and determining various aspects of the surface of the substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from a measured change of phase and amplitude in the in-situ ESE data.