An ellipsometer capable of improving a throughput calculating ellipsometry coefficients (ψ, Δ) even when performing measurement with a combination of a light source having a wide wavelength band and a spectrometer, and an apparatus for inspecting a semiconductor device is e hid g the ellipsometer may be provided. The ellipsometer includes a polarizing optical element unit for separating reflected light into two polarization components having polarization directions that are orthogonal to each other in a radial direction with respect to an optical axis of an optical system of the reflected light, an analyzer unit for transmitting components of a direction different from the polarization directions of the two polarization components to make the two polarization components interfere with each other, and to form an interference fringe in a form of a concentric circle, an image detector for detecting the interference fringe, and processing circuitry for calculating ellipsometry coefficients from the interference fringe.

Systems and methods are provided for acquiring images of objects. Light of different types (e.g., different polarization orientations) can be directed onto an object from different respective directions (e.g., from different sides of the object). A single image acquisition can be executed in order to acquire different sub-images corresponding to the different light types. An image of a surface of the object, including representation of surface features of the surface, can be generated based on the sub-images.

An automatic 3D image acquisition system for optical inspection of objects (B) includes one or more light sources (including a laser source) configured to emit a light toward a field of view wherein an object (B) to be inspected is placed, and at least one digital sensor that acquires at least part of the light reflected by the object (B) to be inspected.

The the-digital sensor includes and intensity sensor and is operatively connected to a data processing unit configured to determine physical and/or geometric features of the object (B) to be inspected on the basis of the light acquired by the digital sensor.

The automatic optical inspection system includes an image intensifier apparatus and optical elements which define a path of the laser light pulse from the laser source to the field of view and from the field of view to the image intensifier apparatus.

A method for inspecting an incision made on a lateral surface of a plastic cap includes the following steps: conveying the plastic cap along an inspection path through an inspection zone in which the cap is inspected; emitting a polarized light collimated along a light orientation towards the inspection zone; capturing image data representing at least one image of the lateral surface of the cap through an optical sensor; receiving the image data in a control unit; processing the image data to derive information about the incision.

A method of evaluating a semiconductor wafer by a laser surface inspection device. The method includes performing evaluation of the wafer by detecting a defect kind of one of a deposit and a non-deposited convex defect present on a surface of a coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from a first incident system at the surface by three kinds of light receiving systems, and at least one high incidence angle measurement result obtained by reception of a radiated light radiated by reflection or scattering of a light incident from a second incident system at the surface by at least one of the three kinds of light receiving systems.-

A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.

An inspection device of a display device includes a first illumination unit providing a first incident light to the display device at a first incident angle, a second illumination unit providing a second incident light to the display device at a second incident angle, a third illumination unit providing a third incident light to the display device at a third incident angle, and a defect detector receiving at least one of a first reflection light obtained from the first incident light reflected by the display device at a first reflection angle, a second reflection light obtained from the second incident light reflected by the display device at a second reflection angle, and a third reflection light obtained from the third incident light reflected by the display device at a third reflection angle to detect defects of the display device.

An optical inspection system includes one or more gratings to convert the polarization of light scattered from a target from an elliptical polarization that varies spatially across a collection pupil to a linear polarization that is uniformly oriented across the collection pupil. The one or more gratings have phase retardation that varies spatially across the collection pupil in accordance with the elliptical polarization. The one or more gratings include at least one grating on a reflective substrate. The optical inspection system also includes a linear polarizer to filter out the linearly polarized light.

A wafer inspection apparatus includes: a stage configured such that a wafer is arranged on the stage; an optical apparatus configured to align the wafer on the stage and generate an optical intensity image including an optical intensity profile; a focus adjusting unit configured to align light incident onto the wafer to be in-focus; and an image processor configured to integrate the optical intensity image with vertical level data of the in-focus to generate and analyze a three-dimensional (3D) image.

A defect inspection apparatus includes an illumination unit configured to irradiate a surface of a sample with a linear illumination spot; a condensing detection unit configured to condense reflected light of the illumination spot and to control a polarization state of the incident light to form an optical image; and a sensor unit configured to output the optical image and including an array-shaped light receiving portion and an antireflection film at a position conjugate with the illumination spot, in which the condensing detection unit includes a polarization control unit configured to increase light incident efficiency to the sensor unit. The normal line of the light receiving surface of the sensor unit is inclined from the optical axis of the condensing detection unit by 10 degrees or more and less than 80 degrees. The light condensing detection unit increases the optical magnification in the lateral direction of the illumination spot.