A method and apparatus to measure specular reflection intensity, specular reflection angle, near specular scattered radiation, and large angle scattered radiation and determine the location and type of defect present in a first and a second transparent solid that have abutting surfaces. The types of defects include a top surface particle, an interface particle, a bottom surface particle, an interface bubble, a top surface pit, and a stain. The four measurements are conducted at multiple locations along the surface of the transparent solid and the measured information is stored in a memory device. The difference between an event peak and a local average of measurements for each type of measurement is used to detect changes in the measurements. Information stored in the memory device is processed to generate a work piece defect mapping indicating the type of defect and the defect location of each defect found.

An optical disc device includes: an optical pickup including a first laser light source that emits laser light, an objective lens that focuses the laser light emitted from the first laser light source onto an optical disc, and a light receiving element that receives reflected light from the optical disc, and performs photoelectric conversion on the reflected light received to output a received-light signal; an FS signal generator that generates an FS signal indicating the light amount of the reflected light from the optical disc, based on the received-light signal from the light receiving element; and a dirt determiner that determines that dirt is present in the optical pickup, when the peak level of the FS signal is less than a dirt determination threshold, and controls the light receiving element to increase the peak level of the received-light signal from the light receiving element.

Provided herein is an apparatus, including an excitation arm including excitation optics; a collection arm including collection optics, wherein the excitation arm and the collection arm are geometrically off-axis from one another for independent control of the excitation optics or the collection optics; and a full-surface spectroscopic analyzer to analyze a thin-film over an article from Raman-scattered light collected by the collection optics.

Provided herein is an apparatus including an imaging lens assembly configured to collect reflected light from a surface of an article; an image sensor configured to receive reflected light from the imaging lens assembly, wherein the imaging lens assembly and the image sensor are each arranged at different angles for focusing on substantially an entire surface of an article; and a processing means configured to process signals from the image sensor corresponding to polarized reflected light and subsequently generate one or more features maps.

Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Provided herein is an apparatus including a photon emitter array. The photon emitter array includes a number of photon emitters selectively oriented in a number of polarized orientations. The photon emitters are configured to controllably emit photons onto a surface of an article. The apparatus also includes a photon detector positioned to receive photons scattered from features on the surface of the article. The photon detector simultaneously receives photons oriented in the number of polarized orientations. In addition, the photon detector provides information for mapping the features on the surface of the article.

Provided herein is an apparatus including a photon emitter configured for reflecting photons from a surface of an article onto a first reflective surface. In addition, a second reflective surface is configured for reflecting photons from the surface of the article back onto the surface of the article. The apparatus also includes a detector configured to provide information corresponding to photons scattered from features of the article.

A method and apparatus to measure specular reflection intensity, specular reflection angle, near specular scattered radiation, and large angle scattered radiation and determine the location and type of defect present in a first and a second transparent solid that have abutting surfaces. The types of defects include a top surface particle, an interface particle, a bottom surface particle, an interface bubble, a top surface pit, and a stain. The four measurements are conducted at multiple locations along the surface of the transparent solid and the measured information is stored in a memory device. The difference between an event peak and a local average of measurements for each type of measurement is used to detect changes in the measurements. Information stored in the memory device is processed to generate a work piece defect mapping indicating the type of defect and the defect location of each defect found.

Method for discriminating defects present on a frontside of a transparent substrate from defects present on a backside of the substrate comprises disposing the substrate in an inspection system in which first and a second light beams intersect at a measurement spot on the frontside of the substrate. Relative movement of the substrate and measurement spot is controlled such that a reference plane is kept tangential to the measurement path. A first pattern is identified in a measurement signal, the first pattern corresponding to light scattered by a particle on the backside of the substrate and presenting two intensity peaks separated from each other by a determined separation interval corresponding to the time necessary for the defect to be moved over the distance separating two illumination spots on the backside of the substrate.