An optical system configured to measure a raised or receded surface feature on a surface of a sample may comprise a broadband light source; a tunable filter configured to filter broadband light emitted from the broadband light source and to generate a first light beam at a selected wavelength; a linewidth control element configured to receive the first light beam and to generate a second light beam having a predefined linewidth and a predetermined coherence length; collimating optics optically coupled to the second light beam and configured to collimate the second light beam; collinearizing optics optically coupled to the collimating optics and configured to align the collimated second light beam onto the raised or receded surface feature of the sample, and a processor system and at least one digital imager configured to measure a height of the raised surface or depth of the receded surface from light reflected at least from those surfaces.

A substrate inspection method in a substrate treatment system including a plurality of treatment apparatuses each performing a predetermined treatment on a substrate, includes: imaging a surface of a substrate before being treated in the treatment apparatuses to acquire a first substrate image; extracting a predetermined feature amount from the first substrate image; selecting an inspection recipe corresponding to the feature amount extracted from the first substrate image, from a storage unit in which a plurality of inspection recipes each set corresponding to the feature amount in a different range are stored; imaging the surface of the substrate after being treated in the treatment apparatuses to acquire a second substrate image; and determining presence or absence of a defect of the substrate, based on the selected inspection recipe and the second substrate image.

A substrate inspection method in a substrate treatment system including a plurality of treatment apparatuses each performing a predetermined treatment on a substrate, includes: imaging a surface of a substrate before being treated in the treatment apparatuses to acquire a first substrate image; extracting a predetermined feature amount from the first substrate image; selecting an inspection recipe corresponding to the feature amount extracted from the first substrate image, from a storage unit in which a plurality of inspection recipes each set corresponding to the feature amount in a different range are stored; imaging the surface of the substrate after being treated in the treatment apparatuses to acquire a second substrate image; and determining presence or absence of a defect of the substrate, based on the selected inspection recipe and the second substrate image.

A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

Apparatus inspects the presence/absence of foreign substance on object having inspection region and non-inspection region arranged outside the inspection region. The apparatus includes sensor for illuminating the object and output, as image, result acquired by detecting light from region including the inspection region, and processor for detecting foreign substance based on inspection region image acquired by excluding non-inspection region image, which is image of the non-inspection region, from the image output from the sensor. The non-inspection region image includes first part generated by light from predetermined part of the non-inspection region of the inspected object and second part whose pixel value is continuous from pixel value of the first part and the processor specifies the second part based on fact that the pixel value of the second part is continuous from that of the first part.

Apparatus inspects the presence/absence of foreign substance on object having inspection region and non-inspection region arranged outside the inspection region. The apparatus includes sensor for illuminating the object and output, as image, result acquired by detecting light from region including the inspection region, and processor for detecting foreign substance based on inspection region image acquired by excluding non-inspection region image, which is image of the non-inspection region, from the image output from the sensor. The non-inspection region image includes first part generated by light from predetermined part of the non-inspection region of the inspected object and second part whose pixel value is continuous from pixel value of the first part and the processor specifies the second part based on fact that the pixel value of the second part is continuous from that of the first part.

Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

A system (500) includes an illumination system (502), a lens element (506), and a detector (504). The illumination system generates a beam of radiation (510) having a first spatial intensity distribution (800) at a pupil plane (528) and a second spatial intensity distribution (900) at a plane of a target (514). The first spatial intensity distribution comprises an annular intensity profile (802) or an intensity profile corresponding to three or more beams. The lens element focuses the beam onto the target. The second spatial intensity distribution is a conjugate of the first intensity distribution and has an intensity profile corresponding to a central beam (902) and one or more side lobes (904) that are substantially isolated from the central beam. The central beam has a beam diameter of approximately 20 microns or less at the target. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation.

In this sample stage that adsorbs and holds a sample, the configuration includes: an outer circumference stage that has a first adsorption surface and a pressure receiving chamber that is a recess formed in the center thereof; an inner circumference stage that has a second adsorption surface, and that is housed in the pressure receiving chamber and can project upward from the outer circumference stage; a first flow channel for a sample desorption operation that is formed on the outer circumference stage and is opened on the first adsorption surface; a second flow channel for the sample desorption operation that is formed on the outer circumference stage and the inner circumference stage and is opened on the second adsorption surface; and a third flow channel for inner circumference stage elevating driving that is formed on the outer circumference stage and is opened in the pressure receiving chamber.

In this sample stage that adsorbs and holds a sample, the configuration includes: an outer circumference stage that has a first adsorption surface and a pressure receiving chamber that is a recess formed in the center thereof; an inner circumference stage that has a second adsorption surface, and that is housed in the pressure receiving chamber and can project upward from the outer circumference stage; a first flow channel for a sample desorption operation that is formed on the outer circumference stage and is opened on the first adsorption surface; a second flow channel for the sample desorption operation that is formed on the outer circumference stage and the inner circumference stage and is opened on the second adsorption surface; and a third flow channel for inner circumference stage elevating driving that is formed on the outer circumference stage and is opened in the pressure receiving chamber.