Methods for drift corrected, fast, low dose, adaptive sample imaging with a charged particle microscopy system include scanning a surface region of a sample with a charged particle beam to obtain a first image of the surface region with a first detector modality, and then determining a scan strategy for the surface region. The scan strategy comprises a charged particle beam path, a first beam dwell time associated with at least one region of interest in the first image, the first beam dwell time being sufficient to obtain statistically significant data from a second detector modality, and at least a second beam dwell time associated with other regions of the first image, wherein the first beam dwell time is different than the second beam dwell time. The surface region of the sample is then scanned with the determined scan strategy to obtain data from the first and second detector.

The present invention provides a method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing is performed as the defect recovery heat treatment, and the method includes steps of measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. Consequently, the method for evaluating a semiconductor substrate which enables evaluating a recovery process of the crystal defect is provided.

Methods for drift corrected, fast, low dose, adaptive sample imaging with a charged particle microscopy system include scanning a surface region of a sample with a charged particle beam to obtain a first image of the surface region with a first detector modality, and then determining a scan strategy for the surface region. The scan strategy comprises a charged particle beam path, a first beam dwell time associated with at least one region of interest in the first image, the first beam dwell time being sufficient to obtain statistically significant data from a second detector modality, and at least a second beam dwell time associated with other regions of the first image, wherein the first beam dwell time is different than the second beam dwell time. The surface region of the sample is then scanned with the determined scan strategy to obtain data from the first and second detector.

Methods for drift corrected, fast, low dose, adaptive sample imaging with a charged particle microscopy system include scanning a surface region of a sample with a charged particle beam to obtain a first image of the surface region with a first detector modality, and then determining a scan strategy for the surface region. The scan strategy comprises a charged particle beam path, a first beam dwell time associated with at least one region of interest in the first image, the first beam dwell time being sufficient to obtain statistically significant data from a second detector modality, and at least a second beam dwell time associated with other regions of the first image, wherein the first beam dwell time is different than the second beam dwell time. The surface region of the sample is then scanned with the determined scan strategy to obtain data from the first and second detector.

A wafer having μLEDs is inspected using cathodoluminescence microscopes. A fast scan is enabled by splitting the CL beam into several beams and sensing the beams with point detectors. Optical filters are inserted in the optical path upstream of the detectors, such that each detector senses a different frequency band. The signals are ratioed and the ratios are compared to expected reference. Regions of extreme value are identified and, if desired, a high resolution scan is performed on the regions or a sample of the regions. Viability score is calculated for each identified region.

A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

A detector module for use in an apparatus for analysing a specimen is provided. The detector module comprises a plurality of X-ray sensor elements and one or more electron sensor elements, and is adapted to be positioned below a polepiece of an electron beam assembly of the apparatus from which an electron beam generated by the assembly emerges towards a specimen in use, such that the detector module receives X-rays and backscattered electrons generated by interaction between the electron beam and the specimen. Each of the plurality of X-ray sensor elements is configured to monitor energies of individual received X-ray photons, and the plurality of X-ray sensor elements have a total active area greater than 20 mm.sup.2. The radial extent of the detector module with respect to the electron beam axis in use is less than 10 mm for at least a first portion of the detector module. An apparatus and method for analysing a specimen are also provided.

A detector module for use in an apparatus for analysing a specimen is provided. The detector module comprises a plurality of X-ray sensor elements and one or more electron sensor elements, and is adapted to be positioned below a polepiece of an electron beam assembly of the apparatus from which an electron beam generated by the assembly emerges towards a specimen in use, such that the detector module receives X-rays and backscattered electrons generated by interaction between the electron beam and the specimen. Each of the plurality of X-ray sensor elements is configured to monitor energies of individual received X-ray photons, and the plurality of X-ray sensor elements have a total active area greater than 20 mm.sup.2. The radial extent of the detector module with respect to the electron beam axis in use is less than 10 mm for at least a first portion of the detector module. An apparatus and method for analysing a specimen are also provided.

Apparatuses for collection of wavelength resolved and angular resolved cathodoluminescence (WRARCL) emitted from a sample exposed to an electron beam (e-beam) or other excitation beams are described. Cathodoluminescence light (CL) may be emitted from a sample at specific angles relative to the excitation beam and analyzed with respect to light-emitting and other optical phenomena. The described embodiments allow collection of WRARCL data more efficiently and with significantly fewer aberrations than existing systems.