A method is provided for controlling the function of a sensor for detecting particles, in particular soot particles, the sensor including at least two measuring electrodes and a substrate on which the measuring electrodes are situated. The method includes the following: carrying out a first current-voltage measurement for ascertaining a first measured variable; carrying out a second current-voltage measurement for ascertaining a second measured variable, one measuring electrode of the measuring electrodes being applied to another electrical potential; carrying out a third current-voltage measurement for ascertaining a third measured variable; an configured forming a correction value for correcting the second measured variable with the aid of the first measured variable and the third measured variable.

Sensors for detecting a formaldehyde-containing gas may include a first electrode and a second electrode; and an arylphosphine nanomaterial construct disposed between the first electrode and the second electrode, the arylphosphine nanomaterial construct including single-walled carbon nanotubes; and an arylphosphine including at least one aryl group. Methods for detecting formaldehyde include exposing a sensor to a formaldehyde-containing gas, the sensor including a first electrode and a second electrode; and an arylphosphine nanomaterial construct disposed between the first electrode and the second electrode, the arylphosphine nanomaterial construct including single-walled carbon nanotubes; and an arylphosphine containing at least one aryl group; monitoring a resistance between the first electrode and the second electrode; and determining a formaldehyde concentration from the resistance.

A gas sensor for the detection of gases and vapors in air is particularly for the detection of anesthetic gases. A method for the detection and for the monitoring of such gases is also provided including detecting anesthetic gases with the gas sensor.

A gas analyzer including: a chamber; a first gas sensor provided in the chamber and including a first gas sensitive member; a second gas sensor provided in the chamber and including a second gas sensitive member; and a detector that detects each of resistance changes of the first and the second gas sensitive members; wherein the first gas sensitive member is an oxide semiconductor mainly composed of at least one of Sn, W, Zn and In or a semiconductor mainly composed of C, and the second gas sensitive member is mainly composed of a halide or an oxide of Cu or Ag.

A semiconductor device disclosed in an embodiment comprises: a light emitting unit comprising a light emitting structure layer which has a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a sensor unit disposed on the light emitting unit, wherein the sensor unit comprises: a sensing material changing in resistance with light emitted by the light emitting unit; a first sensor electrode comprising a first pad portion and a first extension part extending from the first pad portion and contacting the sensing material; and a second sensor electrode comprising a first pad portion and a second extension part extending toward the first extension part from the second pad portion and contacting the sensing material. The sensor unit senses an external gas in response to the light generated from the light emitting unit.

This document provides methods, devices, and systems for detecting the presence, absence, or amount of one or more analytes. For example, this document provides methods for using graphene-based sensors to detect one or more analytes (e.g., proteins, nucleic acids, intact cells, intact viruses, intact microorganisms, and/or chemicals).

In an embodiment a sensor includes an outer housing, an inner housing disposed within an interior of the outer housing or connected to the interior of the outer housing, an ozone sensing component disposed within an interior of the inner housing, an ozone modifying component disposed within the interior of the outer housing, a substrate on which the ozone sensing component and the ozone modifying component are disposed, a first inlet integrated into the outer housing, the first inlet being configured to conduct ambient gaseous matter from an outside of the outer housing into the interior of the outer housing and a second inlet integrated into the inner housing, the second inlet being configured to conduct the gaseous matter from the interior of the outer housing into the interior of the inner housing and adjacent to the ozone sensing component, wherein the ozone sensing component is configured to generate a sensing component signal corresponding to an ozone concentration of the gaseous matter within the interior of the inner housing, and wherein the ozone modifying component is configured to alter the ozone concentration of the gaseous matter within the interior of the outer housing.

Provided are a gas sensor and a method of manufacturing the same. The gas sensor may include a transition metal chalcogenide layer on a substrate, a metal nano material on the transition metal chalcogenide layer, and an electrode on the transition metal chalcogenide layer with the metal nano material.

A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided.

Disclosed are a hydrogen sensor which includes a P-type silicon nanowire array and a hydrogenation catalyst formed on a surface of the nanowire array, and a method of manufacturing the same.