The present invention provides device for profiling a biological sample with at least one RNA segment comprising: a metal wire positioned relative to the biological sample such that the sample and the metal wire form a Schottky barrier junction; a bias voltage provider adapted for rectifying the Schottky junction; and; a module for collecting the current over voltage profile of the Schottky junction.

A sensor device includes a first electrode and a second electrode disposed over a substrate, and a sensitive film including a base film which couples the first electrode and the second electrode to each other and contains Cu and a halogen element and PEDOT/PSS which bonds to the base film.

The present description provides a gas sensor, a method for manufacturing the same and a detection device. The gas sensor includes: an insulation substrate, a gas sensitive element, a first electrode and a second electrode. The gas sensitive element is disposed on the insulation substrate and has a three-dimensional nano network structure. The first electrode and the second electrode are located on opposite sides of the gas sensitive element.

A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.

A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and an In.sub.xAl.sub.yGa.sub.1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.

Materials, methods of making, and methods of using an apparatus for sensing. The apparatus includes an optical sensing platform; and metal oxide based nanowires incorporated into the optical sensing platform.

In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for air quality monitoring. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts are non-ohmic (capacitively-coupled) and connected to the formed 2DEG channel and to the electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness. An optional dielectric layer is deposited on top of the barrier layer.

Disclosed herein are p-n metal oxide semiconductor (MOS) heterostructure-based sensors and systems. The sensors and systems described herein can include sensing element that comprises a first region comprising a p-type MOS material (e.g., NiO) and a second region comprising an n-type MOS material (e.g., In.sub.2O.sub.3). These sensors and systems can exhibit sensitivity and selectivity to NH.sub.3 at ppb levels, while discriminating against CO, NO, or a combination thereof at concentrations a thousand-fold higher (ppm) and spread over a considerable range (0-20 ppm). These sensors and systems can be used to detect and/or quantify NH3 in samples, including biological samples (e.g., breath samples) and combustion gases.

An electricity measuring type surface plasmon resonance sensor includes: a plasmon resonance intensifying sensor chip in which a prism and a sensor chip including an electrode, a silicon semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the electrode, the silicon semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the electrode and the plasmon resonance film electrode.

An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.