The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor.

A gas sensor containing counter electrodes and a semiconductor nanowire 4 disposed between the counter electrodes 2, 3, wherein the semiconductor nanowire 4 is in a state where light can be irradiated, which sensor measures changes in the electric current associated with adsorption of a gas to the semiconductor nanowire 4, wherein the electric current is generated by irradiation of light on the semiconductor nanowire with a voltage applied to the counter electrodes 2, 3.

Sensors and sensing methods are provided which can be highly sensitive but relatively inexpensive and small, which are suitable for uses such UAVs, distributed field monitors, medical diagnosis, and environmental monitoring. Various of these sensors can be characterized by one or more features which produce extreme insect antenna sensitivity and identification capability for chemical analytes.

It is proposed a sensor for measuring a gas property, wherein the sensor comprises a semiconductor die, wherein the semiconductor die comprises a reference cavity and a measuring cavity, wherein a reference sensor element is arranged in the reference cavity, wherein a measuring sensor element is arranged in the measuring cavity, wherein the reference cavity is sealed from ambient gas, wherein the measuring cavity is fluidly connected to ambient gas. Further it is proposed a method for manufacturing such a sensor.

Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.

A method for manufacturing one or more sensors for measuring a gas property includes providing a semiconductor wafer having a front side and a back side; providing a well with a doping type opposite of a doping type of the semiconductor wafer at the front side of the semiconductor wafer; etching at least one reference cavity and at least one measuring cavity in the back side of the semiconductor wafer to form membranes; providing conductive regions within or at a surface of the membranes; forming at least one reference sensor element and at least one measuring sensor element from the conductive regions by etching; and bonding at least one covering wafer to the semiconductor wafer for sealing the reference cavity and covering the measuring cavity.