A method monitors gases produced in an insulating medium circuit. The insulating medium circuit is in contact with a transition resistor of an on-load tap-changer. The method includes: ascertaining a time profile of a resistor temperature of the transition resistor during a loading time period; and determining at least one characteristic value for characterizing the gases produced based upon the time profile of the resistor temperature.

A method monitors gases produced in an insulating medium circuit. The insulating medium circuit is in contact with a transition resistor of an on-load tap-changer. The method includes: ascertaining a time profile of a resistor temperature of the transition resistor during a loading time period; and determining at least one characteristic value for characterizing the gases produced based upon the time profile of the resistor temperature.

A hydrogen detecting sensor is initiated. The hydrogen detecting sensor include a substrate; a heater layer formed on the substrate so as to generate heat; a sensing element formed on a top face of the heater layer, wherein the sensing element includes a sensing layer, wherein the sensing layer has a structure in which two or more alloy layers are stacked, wherein each of the two or more alloy layers is made of an alloy of a catalyst metal and a transition metal, wherein an electrical resistance of the catalyst metal reversibly changes when the catalyst metal adsorbs hydrogen, wherein a ratio of a content of the transition metal to a content of the catalyst metal in each of the two or more alloy layers continuously changes based on a vertical level metal in each of the two or more alloy layers, wherein the sensing element measures an electrical resistance based on a hydrogen concentration; and a compensation element formed on the top face of the heater layer so as to be spaced apart from the sensing element, wherein the compensation element includes: a material having the same structure as the structure of the sensing layer; and a protective layer covering the material layer so as to prevent an external substance from invading the material layer, wherein the compensation element measures an electrical resistance based on temperature change.

A resistor-assembly includes a substrate, a heater, a resistor-element, and conductive-leads. The substrate is formed of a ceramic-material. The heater heats the resistor-assembly. The resistor-element is formed of an ion-conducting material that overlies the substrate. The conductive-leads are formed of a catalytic-metal that are in communication with a gas and in electrical contact with the resistor-element. The resistor-element is characterized by a resistance-value influenced by an oxygen-presence in the gas when the resistor-element is heated by the heater such that a resistor-temperature is greater than a temperature-threshold.

A resistor-assembly includes a substrate, a heater, a resistor-element, and conductive-leads. The substrate is formed of a ceramic-material. The heater heats the resistor-assembly. The resistor-element is formed of an ion-conducting material that overlies the substrate. The conductive-leads are formed of a catalytic-metal that are in communication with a gas and in electrical contact with the resistor-element. The resistor-element is characterized by a resistance-value influenced by an oxygen-presence in the gas when the resistor-element is heated by the heater such that a resistor-temperature is greater than a temperature-threshold.

A system for determining one or more properties of one or more gases. The system comprises sensors configured to measure thermal conductivity and exothermic responses of a sample at multiple temperatures. Sensor responses to exposure to a gas sample at two or more temperatures are compensated and analyzed by a subsystem. The subsystem is configured to determine a thermal conductivity of the gas sample at each of the two or more temperatures and determine at least one component of the gas sample based at least in part on the thermal conductivity value of the sample at each of the two or more temperatures. Related systems and methods of determining one or more properties of a sample are also disclosed.

A combustible gas sensor for detecting an analyte gas includes a first element including a first electric heating element, a first support structure on the first electric heating element and a first catalyst supported on the first support structure and electronic circuitry in electrical connection with the first element. The electronic circuitry is configured to provide energy to the first element to heat the first element to at least a first temperature at which the first catalyst catalyzes combustion of the analyte gas and to determine if the analyte gas is present based on a response of the first element to being heated to at least the first temperature. The electronic circuitry is further configured to apply an interrogation pulse to the first element in which energy to the first element is increased or decreased to induce an associated response from the first element.

A combustible gas sensor for detecting an analyte gas includes a first element including a first electric heating element, a first support structure on the first electric heating element and a first catalyst supported on the first support structure and electronic circuitry in electrical connection with the first element. The electronic circuitry is configured to provide energy to the first element to heat the first element to at least a first temperature at which the first catalyst catalyzes combustion of the analyte gas and to determine if the analyte gas is present based on a response of the first element to being heated to at least the first temperature. The electronic circuitry is further configured to apply an interrogation pulse to the first element in which energy to the first element is increased or decreased to induce an associated response from the first element.

A method for producing an electromigration-resistant crystalline transition-metal silicide layer of a layer sequence, for example, to provide a micro heater includes, supplying a semiconductor substrate including an electrically insulating layer; physically depositing a transition metal on the electrically insulating layer; carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; conveying monosilane to the inert gas plasma, with the monosilane decomposing into silicon and hydrogen and the silicon in the gaseous phase entering into a chemical reaction with the transition metal in order to form the electromigration-resistant crystalline transition-metal silicide layer.

A method for producing an electromigration-resistant crystalline transition-metal silicide layer of a layer sequence, for example, to provide a micro heater includes, supplying a semiconductor substrate including an electrically insulating layer; physically depositing a transition metal on the electrically insulating layer; carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; conveying monosilane to the inert gas plasma, with the monosilane decomposing into silicon and hydrogen and the silicon in the gaseous phase entering into a chemical reaction with the transition metal in order to form the electromigration-resistant crystalline transition-metal silicide layer.