A fluid sensor for sensing a concentration or composition of a fluid, the sensor comprising: a semiconductor substrate comprising a first etched portion; a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises a first dielectric membrane located over the first etched portion of the semiconductor substrate; a first heating element located within the first dielectric membrane; and a second heating element; wherein the first heating element is arranged to thermally shield the second heating element from ambient temperature changes; wherein the first heating element or the second heating element is configured to operate as a temperature sensing element; wherein the first heating element is configured to operate in a constant temperature or constant resistance mode; wherein the second heating element is configured to operate in a constant current or constant voltage mode or constant power mode; and wherein the sensor is configured to determine a thermal conductivity of the fluid using the temperature sensing element to determine said concentration or composition of the fluid.

A sensor element (4) is used to apply a heating pulse to a pharmaceutical product (6). Chemical or structural information about the pharmaceutical product is determined by measuring a response of the sensor element (4) during the heating pulse. The response is dependent on a heat transfer characteristic of the pharmaceutical product (6).

A sensor element (4) is used to apply a heating pulse to a pharmaceutical product (6). Chemical or structural information about the pharmaceutical product is determined by measuring a response of the sensor element (4) during the heating pulse. The response is dependent on a heat transfer characteristic of the pharmaceutical product (6).

A system for determining one or more properties of one or more gases. The system comprises sensors configured to measure thermal conductivity and exothermic responses of a sample at multiple temperatures. Sensor responses to exposure to a gas sample at two or more temperatures are compensated and analyzed by a subsystem. The subsystem is configured to determine a thermal conductivity of the gas sample at each of the two or more temperatures and determine at least one component of the gas sample based at least in part on the thermal conductivity value of the sample at each of the two or more temperatures. Related systems and methods of determining one or more properties of a sample are also disclosed.

A system for determining one or more properties of one or more gases. The system comprises sensors configured to measure thermal conductivity and exothermic responses of a sample at multiple temperatures. Sensor responses to exposure to a gas sample at two or more temperatures are compensated and analyzed by a subsystem. The subsystem is configured to determine a thermal conductivity of the gas sample at each of the two or more temperatures and determine at least one component of the gas sample based at least in part on the thermal conductivity value of the sample at each of the two or more temperatures. Related systems and methods of determining one or more properties of a sample are also disclosed.

An integrated thermal sensor comprising photonic crystal elements that enable photonic elements for photonic sourcing, spectral switching and filtering, sensing of an exposed analyte and detection. In embodiments, applications are disclosed wherein these photonic elements provide a spectrophotometer, a photonic channel switch and a standalone sensor for toxic gases and vapors. An application coupled with a mobile phone is disclosed.

An integrated thermal sensor comprising photonic crystal elements that enable photonic elements for photonic sourcing, spectral switching and filtering, sensing of an exposed analyte and detection. In embodiments, applications are disclosed wherein these photonic elements provide a spectrophotometer, a photonic channel switch and a standalone sensor for toxic gases and vapors. An application coupled with a mobile phone is disclosed.

A thermoresistive gas sensor, e.g. for a flow sensor or a thermal conductivity detector, has a lattice with lattice webs, which consist of a semiconductor material arranged in the plane of the lattice in parallel next to one another, wherein the semiconductor material is formed on a plate-shaped semiconductor substrate that extends over a window-like cutout in the semiconductor substrate and forms the lattice, where the semiconductor layer is doped outside the cutout in areas of two ends of the lattice at least over the width of the lattice until it degenerates and/or bears metallizations, where the semiconductor layer further contains a separation structure insulating the two ends of the lattice from one another, in which the semiconductor material is removed or is not doped, and where the lattice webs extend in an S shape and are connected electrically in parallel to achieve a high measurement sensitivity and mechanical stability.

A thermoresistive gas sensor, e.g. for a flow sensor or a thermal conductivity detector, has a lattice with lattice webs, which consist of a semiconductor material arranged in the plane of the lattice in parallel next to one another, wherein the semiconductor material is formed on a plate-shaped semiconductor substrate that extends over a window-like cutout in the semiconductor substrate and forms the lattice, where the semiconductor layer is doped outside the cutout in areas of two ends of the lattice at least over the width of the lattice until it degenerates and/or bears metallizations, where the semiconductor layer further contains a separation structure insulating the two ends of the lattice from one another, in which the semiconductor material is removed or is not doped, and where the lattice webs extend in an S shape and are connected electrically in parallel to achieve a high measurement sensitivity and mechanical stability.

A gas sensor is described for measuring a concentration of an analysis gas based on a thermal conductivity principle, including at least one analysis heating element situated on a first diaphragm for heating the analysis gas, a reference heating element situated on a second diaphragm for heating a reference gas, at least one evaluation electronics unit for measuring a resistance change of the analysis heating element caused by the analysis gas in relation to an electrical resistance of the reference heating element, the first diaphragm and the second diaphragm being situated adjacent to one another in a sensor substrate, due to a base substrate situated on one side on the sensor substrate, a measuring volume is formable between the first diaphragm and the base substrate and a reference volume is formable between the second diaphragm and the base substrate.