Patent classifications
G01N29/0681
DEVICE AND METHOD FOR MID-INFRARED MICROSCOPY AND ANALYSIS
The invention relates to a device (1) and a corresponding method for mid-infrared microscopy and/or analysis, the device (1) comprising at least one radiation unit (10) configured to generate radiation (11) of time-varying intensity, the radiation (11) comprising one or more wavelengths in the mid-infrared spectral range, at least one refractive and/or reflective optical unit (12) which is configured to focus and/or direct the radiation (11) to at least one region or point of interest (20) located on and/or within an object (2), at least one detection unit (18) configured to detect ultrasound waves (17) emitted by the object (2) at the at least one region or point of interest (20) in response to an interaction of the radiation (11) with the object (2) and to generate according detection signals, and an evaluation unit (25) configured to derive information regarding at least one property of the object (2) from the detection signals and/or to generate a spatial and/or spatio-temporal distribution of the detection signals or of information derived from the detection signals obtained for the at least one region or point of interest (20) located on and/or within the object (2).
System and Method for Detecting Failed Electronics Using Acoustics
An apparatus and method for detecting failed electronics using acoustics. The method comprising directing an acoustic wave toward a circuit component to be tested such that the acoustic wave is reflected off the circuit component, receiving the reflected acoustic wave, amplifying the reflected acoustic wave, and comparing the reflected acoustic wave with known acoustic waves to determine if the circuit component is operating properly. The apparatus comprising a data acquisition system for acquiring data, an X-Y-Z positioner to position two transducers and to hold the circuit component, and software to post-process and analyze the data. The data acquisition system further includes an oscilloscope, a pulser-receiver, two air-coupled transducers, and an amplifier.
METHOD OF PERFORMING ATOMIC FORCE MICROSCOPY
A method of performing atomic force microscopy (AFM) measurements, uses an ultrasound transducer to transmit modulated ultrasound waves with a frequency above one GHz from the ultrasound transducer to a top surface of a sample through the sample from the bottom surface of the sample. Effects of ultrasound wave scattering are detected from vibrations of an AFM cantilever at the top surface of the sample. Before the start of the measurements a drop of a liquid is placed on a top surface of the ultrasound transducer. The sample is placed on the top surface of the ultrasound transducer, whereby the sample presses the liquid in the drop into a layer of the liquid between the top surface of the ultrasound transducer and a bottom surface of the sample. The AFM measurements are started after a thickness of the layer of the liquid has stabilized.
Scanning acoustic microscopy system and method
A system for scanning and analyzing a device wider test includes a transducer. The transducer transmits ultrasonic waves to scan the device under test and determine various properties (e.g., material of layers). The system further includes a heating/cooling portion. The heating/cooling portion conducts thermal stress testing on the device under test to accentuate areas of delamination between layers. The transducer then performs scans on the device under test to locate areas of delamination.
PHOTOACOUSTIC AND OPTICAL MICROSCOPY COMBINER AND METHOD OF GENERATING A PHOTOACOUSTIC IMAGE OF A SAMPLE
A photoacoustic and optical microscopy combiner. The combiner is configured to support a transducer defining an axis. The combiner includes a body including a base and an opening extending through the base, and a glass member at least partially positioned within the opening. The glass member includes a surface positioned at an angle relative to the base and the axis of the transducer. A sample slide is supported on the body and at least partially over the opening. The sample slide is positioned such that a sample on the sample slide is configured to receive light from a laser and redirect the light to an ultrasound transducer to generate a real-time image of a sample.
ATOMIC FORCE MICROSCOPY SYSTEM, METHOD FOR MAPPING ONE OR MORE SUBSURFACE STRUCTURES LOCATED IN A SEMICONDUCTOR DEVICE OR FOR MONITORING LITHOGRAPHIC PARAMETERS IN A SEMICONDUCTOR DEVICE AND USE OF SUCH AN ATOMIC FORCE MICROSCOPY SYSTEM
Atomic force microscopy system comprising an atomic force microscopy device and a substrate carrier having a carrier surface carrying a substrate. The substrate has a substrate main surface and a substrate scanning surface opposite the substrate main surface. The atomic force microscopy device comprises a scan head including a probe. The probe comprises a cantilever and a probe tip arranged on the cantilever. The atomic force device further comprises an actuator cooperating with at least one of the scan head or the substrate carrier for moving the probe tip and the substrate carrier relative to each other in one or more directions parallel to the carrier surface for scanning of the substrate scanning surface with the probe tip. A signal application actuator applies, during said scanning, an acoustic input signal to the substrate, said acoustic input signal generating a first displacement field in a first displacement direction only. A tip position detector monitors motion of the probe tip relative to the scan head during said scanning for obtaining an output signal. The tip position detector is arranged for monitoring motion of the probe tip only in a direction orthogonal to the displacement direction.
Method of and system for performing defect detection on or characterization of a layer of a semiconductor element or semi-manufactured semiconductor element
The present document relates to a method of performing defect detection on a self-assembled monolayer of a semiconductor element or semi-manufactured semiconductor element, using an atomic force microscopy system. The system comprises a probe with a probe tip, and is configured for positioning the probe tip relative to the element for enabling contact between the probe tip and a surface of the element. The system comprises a sensor providing an output signal indicative of a position of the probe tip. The method comprises: scanning the surface with the probe tip; applying an acoustic vibration signal to the element; obtaining the output signal indicative of the position of the probe tip; monitoring probe tip motion during said scanning for mapping the surface of the semiconductor element, and using a fraction of the output signal for mapping contact stiffness indicative of a binding strength.
Micro-resolution ultrasonic nondestructive imaging method
A system and methods of nondestructive testing are described. The system includes an immersion ultrasonic probe and a laser vibrometer. The immersion ultrasonic probe and a sample are immersed in a fluid contained in an immersion tank and the laser vibrometer is disposed outside of the immersion tank. A tightly focused ultrasonic beam from the immersion ultrasonic probe and a laser beam from the laser vibrometer are both transmitted upon a sample, the laser beam being transmitted through the wall of the immersion tank. Since the ultrasonic beam is tightly focused and the laser beam samples only a small area impinged by the ultrasonic beam, microscopic resolution is obtained.
Method of tuning parameter settings for performing acoustic scanning probe microscopy for subsurface imaging, scanning probe microscopy system, and computer program product
Method of tuning parameter settings for performing acoustic scanning probe microscopy for subsurface imaging, scanning probe microscopy system, and computer program product. This document relates to a method of tuning a scanning probe microscopy system. The method comprises: a) applying an acoustic vibration signal comprising a first frequency and a second frequency to a sample; b) at a first position of the probe tip, sweeping the first frequency across a first frequency range, and obtaining a first signal; c) at a second position of the probe tip, sweeping the first frequency across at least said first frequency range, and obtaining a second signal; d) analyzing the first and second signals to obtain a difference characteristic dependent on the first frequency. The first and second position are selected such that a subsurface structure of the sample at the first and second position is different.
METHOD, ATOMIC FORCE MICROSCOPY SYSTEM AND COMPUTER PROGRAM PRODUCT
This document is directed at a method of manufacturing a semiconductor element, the method comprising manipulating a surface of a substrate using an atomic force microscope, the atomic force microscope including a probe, the probe including a cantilever and a probe tip, the substrate including at least one or more device features embedded underneath the surface. The method comprises: imaging the embedded device features, and identifying that a position of the probe tip of the atomic force microscope is aligned with the feature; and displacing the probe tip transverse to the surface for exerting a stress for performing the step of surface manipulation, as for example contact holes. Imaging is performed by applying and obtaining an acoustic signal to and from the substrate via the probe tip, including a first and a second signal component at different frequencies. The imaging and surface manipulation are performed using said same probe and probe tip.