A vacuum apparatus includes a vacuum chamber, first sensor units disposed in the vacuum chamber facing a deposition direction of particles, and second sensor units disposed in the vacuum chamber, each disposed on a corresponding first sensor of the first sensor units facing the deposition direction, wherein the first sensor units are configured to sense a pressure in the vacuum chamber and an absorption amount of the particles adsorbed to the first sensor units, and the second sensor units are configured to sense the pressure in the vacuum chamber.

A system for and a method of measuring ultrasonic wave velocities in a subterranean core specimen is provided. Ultrasonic wave velocities are measured from the side surfaces (faces) of a polygonal-shaped core specimen having at least ten sides or faces. Stress is introduced to the core specimen by hydraulic rams associated with each set of opposing sides. As stress is applied, ultrasonic waves are introduced to at least one side of the set of opposing sides and the wave transmitted through the core specimen is measured. Subsequently, the wave velocity for the ultrasonic wave can be calculated based on the measurements taken. Also, elastic properties associated with the core specimen can be calculated.

Provided is a compact and lightweight electric field probe which has a transmitting/receiving function whereby piezoelectric crystals can be excited through the application of an alternating current electric field thereto, and piezoelectric effect signals can be detected with sufficient sensitivity. Also provided are a control system for the same, and a piezoelectric crystal detector. The electric near-field probe is provided with a capacitor, in which the space between two metal plates that are positioned parallel to each other is filled by a conductor or air, and a series resonance circuit, which has a prescribed resonance frequency and is connected in series to an inverter that is formed by winding a conductive wire around a toroidal core. The electric near-field probe is configured such that: an electric near-field, which originates from the leakage electric field from the capacitor generated by the application of alternating current voltage to the series resonance circuit, is transmitted to the piezoelectric crystals, and the piezoelectric crystals are excited; and the piezoelectric effect signal, which is generated by the excited piezoelectric crystals, is received by the capacitor, and is detected by the series resonance circuit. The control system is for said electric near-field probe.

Devices, systems, methods, and kits of parts for monitoring operation of an electron beam additive manufacturing systems are disclosed. A monitoring system includes one or more measuring devices positioned on the at least one wall in the interior of a build chamber of the additive manufacturing system. Each one of the one or more measuring devices includes a piezoelectric crystal. The monitoring system further includes an analysis component communicatively coupled to the one or more measuring devices. The analysis component is programmed to receive information pertaining to a frequency of oscillation of the piezoelectric crystal. A collection of material on the one or more measuring devices during formation of an article within the build chamber causes a change to the frequency of oscillation of the piezoelectric crystal that is detectable by the analysis component and usable to determine a potential build anomaly of the article.

A sensor apparatus capable of measuring an analyte with excellent sensitivity is provided. A sensor apparatus includes an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting element including a reaction section having an immobilization film to detect an analyte, a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film which covers the first IDT electrode and the second IDT electrode. The element substrate is configured so that a region where the reaction section is located is at a lower level than a region where the first IDT electrode is located and a region where the second IDT electrode is located.

Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and (ii) change in frequency of a phase that is correlated to temperature. Operational configuration methods include determination of an initial phase response of a BAW resonator in which temperature coefficient of frequency is zero, followed by comparison of sensitivity to a level of detection threshold for a phenomenon of interest.

Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and (ii) change in frequency of a phase that is correlated to temperature. Operational configuration methods include determination of an initial phase response of a BAW resonator in which temperature coefficient of frequency is zero, followed by comparison of sensitivity to a level of detection threshold for a phenomenon of interest.

A polymer material is contained in a sensing film of a sensor element having a quartz plate, an electrode made of a metal film provided on the quartz plate, and a sensing film provided on the electrode, and has a structural unit that contains one or more ethylene unsaturated bonds and is originated from a compound containing one or more functional groups reactive to a gas.

A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.

A disk device according to one embodiment includes a housing, a magnetic disk, a circuit board, a first oscillator, and a first adsorption film. The housing is provided with an internal space. The magnetic disk is disposed in the internal space. The circuit board is attached to the housing outside the internal space. The first oscillator is disposed away from an electric circuit in the internal space. The electric circuit is electrically connected to the circuit board. The first adsorption film is formed on the first oscillator, exposed to the internal space, and configured to adsorb a first substance.