A measuring rod for an electric meter and an electric meter assembly using the same are disclosed, wherein the device to be detected disposed around the front end of at least one of the test probes allows the electric meter to determine the type of currently inserted test probes and whether the test probes are suitable for use under a current operation mode of the electric meter in a situation when the device to be detected is inserted into the electric meter; and the measuring socket corresponding to the device to be detected is disposed with a determination mechanism for allowing the electric meter to determine whether the abovementioned test probes or test probes of different types are suitable for use under a current operation mode of the electric meter.

There is provided a test device for a secondary battery, the test device including: a test jig including a nail portion configured to pierce the secondary battery and a heater configured to raise a temperature of the nail portion by being supplied with electric power; and a moving mechanism configured to move the nail portion toward the secondary battery.

An inspection device is provided, which is capable of detecting a short circuit failure even when a connector is provided on a wiring board. The inspection device is configured to inspect a short circuit failure generated at any connected part of a plurality of pins 153 to a wiring board via solder. The plurality of pins 153 is included in a connector provided on the wiring board. The inspection device includes: a wiring 11 connected to certain pins 153 of the plurality of pins 153; a second wiring 12 connected to remaining pins 153 of the plurality of pins 153; and a tester unit connected to the first wiring 11 and to the second wiring 12 so as to inspect insulation between the certain pins 153 and the remaining pins 153.

An optical transmission device includes: a substrate; a waveguide that is provided in the substrate and transmits an optical signal; a signal wiring that is provided in the substrate and transmits an electric signal; and a silicon wiring that is provided in the substrate and is silicon added with an impurity. The signal wiring is placed in an area of the substrate, the area being away from an end of the substrate by a predetermined distance or more. One end of the silicon substrate is connected to the signal wiring, and the other end of the silicon wiring extends to the end of the substrate.

A thin-film probe card and a test module thereof are provided. The test module includes a carrying unit, a plurality of vertical probes fixed in position by the carrying unit, an elastic cushion disposed on the carrying unit, and a thin sheet. The thin sheet includes a carrier partially disposed on the elastic cushion, a plurality of signal circuits disposed on the carrier, and a plurality of electrically conductive protrusions that are respectively formed on the signal circuits. An end of the vertical probes is arranged at an inner side of the electrically conductive protrusions and is coplanar with free ends of the electrically conductive protrusions.

The present application relates to a technique of reducing the occurrence of a spot breakdown near a probe needle with the intention of preventing damage on the probe needle during a test implemented by applying a high voltage to a semiconductor device. In a method of measuring a semiconductor device, the semiconductor device includes: a semiconductor substrate (1), an epitaxial layer (2), at least one second conductivity type region (3) of a second conductivity type formed in a part of the surface layer of the epitaxial layer to have a contour, a Schottky electrode (11), an anode electrode (12), and a cathode electrode (13). A voltage is applied while the probe needle (21) is brought into contact with the upper surface of the anode electrode in a range in which the contour of the at least one second conductivity type region is formed in a plan view.

The invention relates to a clad wire (1) for producing test needles or sliding contacts having a wire core (2) made of rhodium or a rhodium-based alloy, an inner cladding (3) made of copper or silver or aluminum or a copper-based alloy or a silver-based alloy or an aluminum-based alloy, wherein the inner cladding (3) covers or completely encloses the wire core (2) on at least two opposite sides, an adhesion-promoting layer (5) made of gold or a gold-based alloy, which is arranged between the wire core (2) and the inner cladding (3), and an outer cladding (4) made of a metal or a metal alloy having a greater hardness than the material of the inner cladding (3), wherein the outer cladding (4) encloses the inner cladding (3). The invention also relates to a method for producing a clad wire and to a test needle having at least one clad wire (1) or produced from a clad wire (1) and a test needle array having a plurality of test needles spaced apart from one another and a sliding contact having a plurality of clad wires (1) or produced from a clad wire (1).

A device probe includes a primary probe arm and a subsequent probe arm with a slip plane spacing between the primary probe arm and subsequent probe arm. Each probe arm is integrally part of a probe base that is attachable to a probe card. During probe use on a semiconductive device or a semiconductor device package substrate, overtravel of the probe tip allows the primary and subsequent probe arms to deflect, while sufficient resistance to deflection creates a useful contact with an electrical structure such as an electrical bump or a bond pad.

The present disclosure provides a wafer test system and methods thereof. The test system includes a probe apparatus, a data server, an automation subsystem, and a probe mark assessment subsystem. The probe apparatus includes a probe card, a tester, and a camera. The probe card includes probe pins for contacting test pads in the wafer, and the camera captures an image of the test pads. The automation subsystem obtains an image specification from the probe apparatus and triggers an automated assessment of a probe mark in the image of the test pads. The probe mark assessment subsystem performs the automated assessment of the probe mark in the image of the test pads. The probe mark assessment subsystem performs an image-processing operation to obtain a probe mark assessment result, and the automation subsystem stops the probe apparatus if the probe mark assessment result indicates a probe test failure.

A test and measurement probe coupler that may include a substrate, a first signal tap conductor, a first signal contact, a first ground tap conductor, and a first ground contact. The first signal tap conductor may extends a first length along the substrate. The first signal contact may be electrically coupled to the first signal tap conductor, and the first ground tap conductor may extend a second length along the substrate. The first ground tap conductor may be substantially parallel to the first signal tap conductor. The first ground tap conductor may be disposed in a first lateral direction away from the first signal tap conductor, and the first ground contact electrically may be coupled to the first ground tap conductor.