In accordance with an embodiment of the present invention, a method of testing a plurality of semiconductor devices includes applying a stress voltage having a peak voltage on a shield line disposed over a substrate. The substrate has functional circuitry of a semiconductor device. A fixed voltage is applied to a first metal line disposed above the substrate adjacent the shield line. The first metal line is coupled to the functional circuitry and is configured to be coupled to a high voltage node during operation. The peak voltage is greater than a maximum fixed voltage. The shield line separates the first metal line from an adjacent second metal line configured to be coupled to a low voltage node during operation. The method further includes measuring a current through the shield line in response to the stress voltage, determining the current through the shield line of the semiconductor device, and based on the determination, identifying the semiconductor device as passing the test.

A method and system of monitoring a reliability of a semiconductor circuit are provided. A current consumption of a first ring oscillator that is in static state is measured at predetermined intervals. Each measured current consumption value is stored. A baseline current consumption value of the first ring oscillator is determined based on the stored current consumption values. A latest measured current consumption value of the first ring oscillator is compared to the baseline current consumption value. Upon determining that the latest measured current consumption value is above a threshold deviation from the baseline current consumption value, the first ring oscillator is identified to have a dielectric breakdown degradation.

At least one method and system involves performing a time-dependent dielectric breakdown (TDDB) test and a bias temperature instability (BTI) test on a device. A device having at least one transistor and at least one dielectric layer is provided. A test signal is provided for performing a TDDB test and a BTI test on the device. The TDDB test and the BTI test are performed substantially simultaneously on the device based upon the test signal. The data relating to a breakdown of the dielectric layer and at least one characteristic of the transistor based upon the TDDB test and the BTI test is acquired, stored, and/or transmitted.

A contactor and method for testing a breakdown voltage of a device are disclosed. The contactor includes a test site including a plurality of electrical contacts configured to make an electrical connection with the device when the device is positioned at the test site. The contactor further includes a housing including a first housing portion and a second housing portion. The first housing portion and the second housing portion are configured to selectively engage and disengage from each other. The first housing portion and the second housing portion define a closed chamber when engaged, with the test site being within the closed chamber. The contactor further includes a gas inlet configured to supply pressurized gas for pressurizing the closed chamber when the first housing portion and the second housing portion are engaged.

The invention relates to reliable diagnostic apparatus for a switchgear which may minimize the probability of failure in diagnosing a deterioration of a switchgear. The diagnostic apparatus for a switchgear comprises a VHF sensor detecting an electromagnetic wave signal of a VHF band, which is generated by the switchgear; a UHF sensor detecting an electromagnetic wave signal of a UHF band, which is generated by the switchgear; a data acquisition unit that acquires the electromagnetic wave signals detected by the VHF sensor and the UHF sensor, and converts the electromagnetic wave signals into data indicating magnitudes of the electromagnetic wave signals; and a diagnosis unit connected with the data acquisition unit and that executes analysis including whether the data provided by the data acquisition unit is a pattern of a partial discharge signal and stores the analyzed result.

An apparatus, method, and system for detecting arc-faults in a photovoltaic array are disclosed. Further, the detection not only identifies that an arc-fault is present in the array, but also classifies whether the arc-fault is a series type arc-fault or a parallel type arc-fault. Upon determination of the specific type of arc-fault that is at issue, de-energizing the arc-fault specific to the type is selected and carried out.

In accordance with an embodiment of the present invention, a method of testing a plurality of semiconductor devices includes applying a stress voltage having a peak voltage on a shield line disposed over a substrate. The substrate has functional circuitry of a semiconductor device. A fixed voltage is applied to a first metal line disposed above the substrate adjacent the shield line. The first metal line is coupled to the functional circuitry and is configured to be coupled to a high voltage node during operation. The peak voltage is greater than a maximum fixed voltage. The shield line separates the first metal line from an adjacent second metal line configured to be coupled to a low voltage node during operation. The method further includes measuring a current through the shield line in response to the stress voltage, determining the current through the shield line of the semiconductor device, and based on the determination, identifying the semiconductor device as passing the test.

A semiconductor structure for measuring a breakdown voltage of a pn-junction, said semiconductor structure comprises: a substrate; a sensor device comprising an optical active region comprising said pn-junction in said substrate, wherein said sensor device is configured to apply a reverse bias voltage to said pn-junction; and an emitter located adjacent to said optical active region in said substrate and configured to provide charge carriers to said optical active region in order to trigger breakdown of said pn-junction when said reverse bias voltage is equal to or greater than said breakdown voltage.

A film covered battery (1) has a flat shape with an outer cover member (5) formed of a laminate film to accommodate therein a battery element (4) together with an electrolytic solution. For reliable inspection of an insulation failure between a metal layer (52) of the laminate film and a negative electrode plate (42) of the battery element (4), an inspection test is performed on the film covered battery by a first inspection device (73) under a condition where pressure is applied to a center region of the outer cover member (5) by a first press bar (72); and an inspection test is performed on the film covered battery by a second inspection device (83) under a condition where pressure is applied to the remaining side regions of the outer cover member (5) by a second press bar (82).

A method for estimating a partial discharge factor of a power semiconductor module which is capable of automatically estimating a partial discharge factor is provided using time-series data of a quantity of charge discharged during a partial discharge test. The method includes: a measurement step of applying, to the power semiconductor module, a test voltage pattern in which a voltage pattern changes, and measuring a quantity of charge that is due to partial discharge of the power semiconductor module; a feature quantity extraction step of extracting a plurality of feature quantities including at least a first feature quantity that is an average value of a quantity of charge in a first time period and a second feature quantity that is an average value of a quantity of charge in a second time period; and an estimation step of estimating the partial discharge factor based on the plurality of feature quantities.