A field effect transistor (FET) engager, for example, includes electrically coupling a gate driver to a gate of a FET for testing the FET. The FET engager further includes providing a probe pad for test instrument measurement of the FET without test instrument capacitance impacting operation of the FET. The FET engager can electrically couple to the gate of the FET hold the gate of the FET at a low voltage while the source and drains are stress tested. The FET engager provides fail-safe mechanisms against accidental turn-on of the FET during operation. The FET engager can provide a second probe pad for selective test instrument turn-on of a second FET. The FET engager can allow test instrument measurement of gate current of the FET without test instrument capacitance impacting operation of the FET.

A method for nondestructive inspection of ceramic structures present as either a ceramic matrix composite structure or a ceramic based coating. Such non-metallic structures are used to provide thermal protection or weight reduction or both to aircraft and their components. The nonmetallic structure is scanned with an electromagnetic pulse in the range of 200 GHz to 4 THz. The electromagnetic pulse includes a plurality of frequencies within the Terahertz range and is not restricted to a single designated frequency. The frequency range is sensitive to changes in impedances and refractive index within the structure. After the electromagnetic pulse passes through the nonmetallic structure, it may be evaluated for changes in impedance in the nonmetallic structure at different locations, and, when present, whether the changes in impedance impact the ability of the structure to perform the function for which it was designed.

One example includes a method for surge-testing a gallium nitride (GaN) transistor device-under-test (DUT) that includes at least one GaN transistor device. The method includes inserting the GaN transistor DUT into a test fixture comprising an inductor such that the inductor is coupled to the GaN transistor device to form a switching power regulator. The method also includes operating the switching power regulator at a DUT operating voltage to generate an output current through the inductor based on a DUT input voltage and a duty-cycle. The method also includes controlling an excitation voltage source to provide a voltage surge-strike to the GaN transistor DUT. The method also includes measuring the output current and the DUT input voltage at least one of during and after the voltage surge-strike. The method further includes storing the measured output current and the measured DUT input voltage in a memory to specify device characteristics of the GaN transistor DUT.

A field effect transistor (FET) engager, for example, includes electrically coupling a gate driver to a gate of a FET for testing the FET. The FET engager further includes providing a probe pad for test instrument measurement of the FET without test instrument capacitance impacting operation of the FET. The FET engager can electrically couple to the gate of the FET hold the gate of the FET at a low voltage while the source and drains are stress tested. The FET engager provides fail-safe mechanisms against accidental turn-on of the FET during operation. The FET engager can provide a second probe pad for selective test instrument turn-on of a second FET. The FET engager can allow test instrument measurement of gate current of the FET without test instrument capacitance impacting operation of the FET.

For example, a method of measuring a device parameter includes: a step of repeatedly measuring the gate-source voltage (or gate-emitter voltage) of a switching element in its switching transient state while switching the external gate resistance for the switching element among m resistance values (where m is an integer of three or more); and a step of, while representing the internal gate resistance and the plateau voltage of the switching element by Rgin and Vp respectively and using the m resistance values of the external gate resistance and corresponding m voltage values of the gate-source voltage (or gate-emitter voltage) as Rg(k) and Vgs(k) respectively (where k=1, 2 . . . m), performing the fitting of the equation Vgs(k)=Rg(k)/(Rg(k)+Rgin)?Vp, thereby to derive the internal gate resistance Rgin or the plateau voltage Vp of the switching element.

A method is provided to increase processor frequency in an integrated circuit (IC). The method includes identifying a gate included in the IC, the gate having a gate threshold voltage and performing a plasma process to form an antenna signal path in signal communication with the gate. The method further comprises adjusting the plasma process or circuit design to increase plasma induced damage (PID) applied to the gate so as to alter the gate threshold voltage.

Main cells that constitute a semiconductor element having a trench gate structure include first cells, and second cells having a structure in which gate insulating films are more easily broken by energization than those in the first cells, and the number of which is smaller than that of the first cells. At a time of driving the semiconductor element, a common gate drive voltage is applied to gate electrodes of the first cells and the second cells. An electrical characteristic is measured to detect failure of the second cells due to energization at the time of driving. The gate electrodes of the failed second cells are electrically isolated from the gate electrodes of the first cells so that the gate drive voltage is not applied to the failed second cells. The failure of the first cells is predicted based on the failure of the second cells.

Spike safe floating current and voltage source (VI) containing a forced voltage amplifier in series with a selectable resistor. A method of providing a VI with forced current testing mode using a forced voltage amplifier in series with a selectable resistor. A method of providing a VI with forced voltage testing mode using a forced voltage amplifier in series with a selectable resistor. A method of measuring the on resistance of a device under test using a VI with a forced voltage amplifier in series with a selectable resistor. A method of measuring the breakdown of an input/output junction of a device under test using a VI with a forced voltage amplifier in series with a selectable resistor.

Various embodiments of a gate oxide breakdown detection technique detect gate oxide degradation due to stress on a per part basis without destroying functional circuits for an intended application. Stress on the gate oxide may be applied while nominal drain currents flow through a device, thereby stressing the device under conditions similar to actual operating conditions. The technique is relatively fast and does not require analog amplifiers or tuning of substantial amounts of other additional circuitry as compared to conventional gate oxide breakdown detection techniques.

A probe card with a voltage terminal configured to be coupled to a voltage supply and a current terminal configured to be coupled to a current supply. The voltage terminal and the current terminal are configured to be coupled to an input node of a device under test (DUT) field effect transistor (FET) through probe needles. The probe card has an overlap resistor capacitor (RC) element coupled to the input node. The probe card includes an analog to digital (ADC) voltage capture module configured to be coupled to the input node of the DUT FET and to an output node of the DUT FET through the probe needles. The probe card has a resistive element configured to be coupled to the output node of the DUT FET through the probe needles and to an electrically neutral node and an ADC current capture module coupled in parallel to the resistive element.