Techniques and apparatuses are provided for detecting a short circuit between pins of an integrated circuit package. The tested pins can be adjacent or non-adjacent on the package. Various types of short circuits can be detected, including resistive, diode and capacitive short circuits. Additionally, short circuits of a single pin can be tested, including a short circuit to a power supply or to ground. The test circuit includes a current mirror, where the input path has a first path connected to a first pin and a parallel second path connected to a second pin. A comparator is connected to the output path of the current mirror. By controlling the on and off states of transistors in the first and second paths, and evaluating the voltage of the output path, the short circuits can be detected.

A storage device includes a plurality of nonvolatile memory devices, a storage controller circuit and a leakage detection circuit. The storage controller circuit controls a plurality of nonvolatile memory devices, the storage controller circuit includes a plurality of connection terminals, each of the plurality of connection terminals is commonly connected to a corresponding set of pins, from among the pluralities of pins included in the plurality of nonvolatile memory devices, via a corresponding connection node, from among a plurality of connection nodes. The pins included in each set of pins have a same attribute. The leakage detection circuit is configured to determine whether leakage occurs at each set of pins based on the merged signal generated by the connection node connected to each set of pins, and configured to provide the storage controller circuit with a detection signal indicating a result of the determination.

An apparatus for testing a device under test (DUT) is provided. The apparatus includes a power supply device and a data generating device. The power supply device is configured to provide a first voltage and a second voltage to the DUT. The data generating device is configured to provide first data to the DUT. The power supply device is configured to provide the first voltage to the DUT in a first time duration. The data generating device is configured to provide the first data to the DUT in the first time duration. The power supply device is configured to provide the second voltage to the DUT in a second time duration after the first time duration. The second voltage is different from the first voltage.

This document describes techniques and systems for leakage screening based on power prediction. In particular, the described systems and techniques estimate, during a silicon manufacturing process, use-case power (e.g., low power, ambient power, high power, gaming power) to apply leakage screening for apart (e.g., a chip package). In some aspects, measurable silicon parameters (e.g., leakage values, bin values, processor sensor values) may be used for use-case power prediction. Using the described techniques, a maximum allowable predicted use-case power can be determined and used for leakage screening regardless of an individual rail leakage or voltage bin assignment.

An apparatus for testing a device under test (DUT) is provided. The apparatus includes a power supply device and a data generating device. The power supply device is configured to provide a first voltage and a second voltage to the DUT. The data generating device is configured to provide first data to the DUT. The power supply device is configured to provide the first voltage to the DUT in a first time duration. The data generating device is configured to provide the first data to the DUT in the first time duration. The power supply device is configured to provide the second voltage to the DUT in a second time duration after the first time duration. The second voltage is different from the first voltage.

An apparatus includes an integrated circuit that includes an in-circuit power switch coupled to a power supply node, a functional circuit coupled between the in-circuit power switch and a ground node, a test circuit, and a test power switch coupled to the test circuit, wherein the test power switch is a replica of the in-circuit power switch. The test circuit is configured to determine characteristics of the test power switch, and to measure a voltage difference across the in-circuit power switch. The test circuit is also configured to use the characteristics of the test power switch and the voltage difference to determine a power consumption of the functional circuit.

A field-programmable gate array includes a memory, a firmware state machine, a register, and an interconnect structure. The memory is configured to store a plurality of configurations. Each of the plurality of configurations has at least one parameter associated therewith. The firmware state machine is configured to read the parameters stored in the memory. The register is configured to have the parameters associated with the plurality of configurations written thereto. The interconnect structure is configured to transmit the parameters between the firmware state machine and the register. The interconnect structure is configured to receive the parameters associated with the plurality of the configurations simultaneously and the interconnect structure is configured to transmit the received parameters associated with the plurality of configurations to the register simultaneously.

A direct-current power supply applies a DC voltage to test semiconductor devices. A current detection unit detects a leakage current of a test circuit in which test semiconductor devices are included. A measuring instrument records a pulse waveform of the leakage current. An analyzer analyzes reliability of test semiconductor devices included in the test circuit based on the recorded pulse waveform.

The present invention provides a semiconductor integrated circuit for detecting leakage current to determine whether an electric leakage occurs in an electric line based on an induced voltage input from a leakage current detection unit 20 installed in the electric line, and an earth, leakage circuit breaker having the semiconductor integrated circuit. A semiconductor integrated circuit 100 for detecting leakage current includes: a signal amplification unit 110 configured to amplify the induced voltage; an interruption determination unit 130 configured to compare an output voltage output from the signal amplification unit with a preset reference voltage, and output an interruption signal for interrupting a power supply to the electric line; a flare current stabilization (FCS) circuit 150 for a signal amplification unit connected to the signal amplification unit; and a flare current stabilization (FCS) circuit 170 for an interruption determination unit connected to the interruption determination unit.

This document discloses a power leakage sensor for a circuit, comprising: a power switch controller circuit coupled with at least one power switch for the digital circuit, the power switch controller configured to control the at least one power switch, to monitor power supply of the digital circuit, and to perform the following: a. in response to the detecting that the power supply to the circuit is powered on, output a power-off signal to the at least one power switch; and b. in response to the measured power supply metric falling below a threshold in response to the power-off signal, output a power-on signal to the at least one power switch. The power leakage sensor further comprises a frequency counter circuit configured to count a frequency of executing steps a. and b., the frequency indicating a proportion of power leakage in the digital circuit.