An integrated circuitry includes a first logic block coupled between a first power supply terminal and a second power supply terminal. The first logic block includes a first scan chain and a configurable defect coupled to a scan output node of the first scan chain. The configurable defect has a logic node and a conductive element coupled between the logic node and the first or the second power supply terminal. The configurable defect is configured to, during a quiescent current testing mode, place a predetermined logic state on the logic node such that a current flows through the conductive element. The current can be detected by external equipment.

A method for determining power consumption of a power domain within an integrated circuit is presented. In a first step, a local power supply impedance profile (Z(f)) of this power domain is determined. Subsequently, a local time-resolved power supply voltage (U(t)) is measured while a well-defined periodic activity is executed in power domain. A set of time-domain measured voltage data (U(t)) is thus accumulated and transformed into the frequency domain to yield a voltage spectrum (U(f)). A current spectrum I(t) is calculated from this voltage profile (U(f)) by using the power supply impedance profile Z(f) of this power domain as I(t)=F.sub.f.sup.1{U(f)/Z(f)}. Finally, a time-resolved power consumption spectrum P(t) is determined from measured voltage spectrum U(t)) and calculated current spectrum (I(t)). This power consumption (P(t)) may be compared with a reference (P.sub.ref(t)) to verify whether power consumption within power domain matches expectations.

An apparatus and methods are provided that more accurately detect the onset of thermal runaway in a device and timely control it. According to one embodiment, changes in stand-by current and temperature of a transistor device are measured and are used to be compared to some thresholds to trigger the device to respond before the onset thermal runaway. According to another embodiment, stand-by current is measured and is compared to some thresholds to trigger the device to respond before the onset thermal runaway.

An apparatus and methods are provided that more accurately detect the onset of thermal runaway in a device and timely control it. According to one embodiment, changes in stand-by current and temperature of a transistor device are measured and are used to be compared to some thresholds to trigger the device to respond before the onset thermal runaway. According to another embodiment, stand-by current is measured and is compared to some thresholds to trigger the device to respond before the onset thermal runaway.

A variable electronic load tester circuit comprising a control circuit and a variable electronic load circuit coupled to the control circuit to receive a voltage from a power supply and present a load to the power supply. The variable electronic load circuit comprises a plurality of transistors connected in series and operable as variable resistors. The control circuit is to control a resistance of the variable resistors to control the load presented to the power supply. The control circuit comprises an error amplifier to compare a first voltage to a feedback signal and an output signal indicative of a difference between the first voltage and the feedback signal. The output signal is to control the resistance of the variable electronic load circuit to vary the load presented to the power supply. The feedback signal is proportional to a current flowing through the variable electronic load circuit.

A variable electronic load tester circuit comprising a control circuit and a variable electronic load circuit coupled to the control circuit to receive a voltage from a power supply and present a load to the power supply. The variable electronic load circuit comprises a plurality of transistors connected in series and operable as variable resistors. The control circuit is to control a resistance of the variable resistors to control the load presented to the power supply. The control circuit comprises an error amplifier to compare a first voltage to a feedback signal and an output signal indicative of a difference between the first voltage and the feedback signal. The output signal is to control the resistance of the variable electronic load circuit to vary the load presented to the power supply. The feedback signal is proportional to a current flowing through the variable electronic load circuit.

Apparatuses and methods can be related to testing signals. An apparatus can be located on a memory die having a probe-based interface. The apparatus can include an input buffer located on the apparatus and configured to receive an input signal, a latch signal, and a buffer reference voltage, characterize the input signal based on the latch signal and the buffer reference voltage, and provide output data comprising a digital reconstruction of the input signal to an output driver located on the memory die.

A variable electronic load tester circuit comprising a control circuit and a variable electronic load circuit coupled to the control circuit to receive a voltage from a power supply and present a load to the power supply. The variable electronic load circuit comprises a plurality of transistors connected in series and operable as variable resistors. The control circuit is to control a resistance of the variable resistors to control the load presented to the power supply. The control circuit comprises an error amplifier to compare a first voltage to a feedback signal and an output signal indicative of a difference between the first voltage and the feedback signal. The output signal is to control the resistance of the variable electronic load circuit to vary the load presented to the power supply. The feedback signal is proportional to a current flowing through the variable electronic load circuit.