A semiconductor inspection device capable of detecting an abnormality with high sensitivity in a failure analysis of a fine-structured device is provided. An electron optical system radiates an electron beam to a sample on a sample stage. A measurement device measures an output from a measurement probe that is in contact with the sample. An information processing device starts and stops the radiation of the electron beam to the sample, sets a first measurement period in which the measurement device measures the output from the measurement probe during the radiation and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation, and obtains the measurement value of the output from the measurement probe based on a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.

A measurement system includes: an excitation system; a detector; and a control unit. The excitation system includes excitation sources generating excitations of different types comprising: a high energy electromagnetic radiation source; at least one electric power supply providing a bias voltage to a sample; and at least one electron beam source generating relatively low energy e-radiation in the form of an electron beam. The excitation system includes first and second sequentially performed measurement modes, for respectively, exciting the sample by the high energy radiation to induce a first-mode secondary electron emission spectral response, and supplying initial bias voltage to the sample and exciting the sample with the e-radiation followed by a gradual variation of the bias voltage from said initial bias voltage to induce a second-mode electric current variations in the sample. The detector detects said first-mode secondary electron emission spectral response and generates first-mode measured data, and monitors the electric current through the sample and generates second-mode measured data indicative of sample current readout.

A measurement system includes: an excitation system; a detector; and a control unit. The excitation system includes excitation sources generating excitations of different types comprising: a high energy electromagnetic radiation source; at least one electric power supply providing a bias voltage to a sample; and at least one electron beam source generating relatively low energy e-radiation in the form of an electron beam. The excitation system includes first and second sequentially performed measurement modes, for respectively, exciting the sample by the high energy radiation to induce a first-mode secondary electron emission spectral response, and supplying initial bias voltage to the sample and exciting the sample with the e-radiation followed by a gradual variation of the bias voltage from said initial bias voltage to induce a second-mode electric current variations in the sample. The detector detects said first-mode secondary electron emission spectral response and generates first-mode measured data, and monitors the electric current through the sample and generates second-mode measured data indicative of sample current readout.

The present disclosure provides a semiconductor device. The semiconductor device includes: a first cell, a dielectric layer, and a snorkel structure. The first cell has an output terminal. The dielectric layer is disposed on the first cell. The snorkel structure is disposed in the dielectric layer. The snorkel structure includes a first conductive structure, a first conductive layer, and a second conductive structure. The first conductive layer is electrically connected to the output terminal of the cell. The first conductive layer is disposed on and electrically connected to the first conductive structure. The second conductive structure is disposed on and electrically connected to the first conductive layer. The second conductive structure has a topmost conductive layer buried in the dielectric layer.

The present disclosure provides a semiconductor device. The semiconductor device includes: a first cell, a dielectric layer, and a snorkel structure. The first cell has an output terminal. The dielectric layer is disposed on the first cell. The snorkel structure is disposed in the dielectric layer. The snorkel structure includes a first conductive structure, a first conductive layer, and a second conductive structure. The first conductive layer is electrically connected to the output terminal of the cell. The first conductive layer is disposed on and electrically connected to the first conductive structure. The second conductive structure is disposed on and electrically connected to the first conductive layer. The second conductive structure has a topmost conductive layer buried in the dielectric layer.

Wafer level electron beam prober systems, devices, and techniques, are described herein related to providing wafer level testing for fabricated device structures. Such wafer level testing contacts a first side of a die of a wafer with a probe to provide test signals to the die under test and performs e-beam imaging of the first side of the die while the test signals are provided to the die under test.

Wafer level electron beam prober systems, devices, and techniques, are described herein related to providing wafer level testing for fabricated device structures. Such wafer level testing contacts a first side of a die of a wafer with a probe to provide test signals to the die under test and performs e-beam imaging of the first side of the die while the test signals are provided to the die under test.

A connecting device for inspection includes a probe head configured to hold electric contacts and optical contacts such that tip ends of the respective contacts are exposed on a lower surface of the probe head, and a transformer including connecting wires arranged therein and optical wires penetrating therethrough. The respective proximal ends of the electric contacts and the optical contacts are exposed on an upper surface of the probe head, and tip ends on one side of the connecting wires electrically connected to the proximal ends of the electric contacts and connecting ends of the optical wires optically connected to the proximal ends of the optical contacts are arranged in a lower surface of the transformer. A positional relationship between the tip end of the respective electric contacts and the tip end of the respective optical contacts on the lower surface of the probe head corresponds to a positional relationship between an electrical signal terminal and an optical signal terminal of a semiconductor device.

The present invention provides a method for positioning short circuit failure, used to position the short circuit point between a first metal wire and a second metal wire. The positioning method comprises: measuring the resistance between the first metal wire and the second metal wire, and positioning the first region where the short circuit point is located by a resistance ratio. In the first region, the short circuit point may be gradually approached by periodically cutting the first metal wire and the second metal wire, electrically isolating the cut portions, and performing a plurality of voltage contrast analysis on the first metal wire and the second metal wire based on the principle of the dichotomy, thereby accurately locating the short circuit point. With the positioning method provided by the present invention, the region where the short circuit defect of the nA (nano ampere) level is located may be accurately found from the first metal wire and the second metal wire that are extremely long. The present invention contributes to improving the yield of a semiconductor device based on the defect adjustment process.

Systems and methods for detecting defects are disclosed. According to certain embodiments, a method of performing image processing includes acquiring one or more images of a sample, performing first image analysis on the one or more images, identifying a plurality of first features in the one or more images, determining pattern data corresponding to the plurality of first features, selecting at least one of the plurality of first features based on the pattern data, and performing second image analysis of the at least one of the plurality of first features. Methods may also include determining defect probability of the plurality of first features based on the pattern data. Selecting the at least one of the plurality of first features may be based on the defect probability.