A method and an apparatus for generating x-ray inspection image of an electronic circuit board are disclosed. The method includes: respectively generating, according to data files of the electronic circuit board and parameters of an X-ray machine, analog images of both faces of the electronic circuit board; subjecting the electronic circuit board to X-ray imaging to generate a real image of the electronic circuit board, the real image comprising real image elements on both faces of the electronic circuit board; identifying, according to the analog images of both faces, from the real image an interference image element that needs to be filtered from the real image for generating a real image of a detected object; and filtering the interference image element from the real image to generate the real image of the detected object.

A method and an apparatus for generating x-ray inspection image of an electronic circuit board are disclosed. The method includes: respectively generating, according to data files of the electronic circuit board and parameters of an X-ray machine, analog images of both faces of the electronic circuit board; subjecting the electronic circuit board to X-ray imaging to generate a real image of the electronic circuit board, the real image comprising real image elements on both faces of the electronic circuit board; identifying, according to the analog images of both faces, from the real image an interference image element that needs to be filtered from the real image for generating a real image of a detected object; and filtering the interference image element from the real image to generate the real image of the detected object.

An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

The invention relates to a system in particular a quantum sensor system, for testing a device-under-test, DUT, comprising: an optically excitable medium which is arranged to receive electromagnetic, EM, radiation emitted by the DUT, at least one light source configured to irradiate the medium with at least one light beam, wherein the medium is optically excited by the at least one light beam, a field generator unit configured to generate an electric and/or magnetic field within the medium, wherein a resonance frequency of the excited medium is modified by an amplitude of the electric and/or magnetic field, wherein an optical parameter, in particular a luminescence, of the exited medium is locally modified if a frequency of the EM radiation corresponds to the resonance frequency at a position in the medium, an image detector configured to acquire an image of the medium, wherein the image shows an intensity profile that results from the modification of the optical parameter, a processor configured to analyze the DUT based on the acquired image.

A precise optical technique for measuring electronic transport properties in semiconductors is disclosed. Using tightly focused laser beams in a photo-modulated reflectance system, the modulated reflectance signal is measured as a function of the longitudinal (Z) displacement of the sample from focus. The modulated component of the reflected probe beam is a Gaussian beam with its profile determined by the focal parameters and the complex diffusion length. The reflected probe beam is collected and input to the detector, thereby integrating over the radial profile of the beam. This results in a simple analytic expression for the Z dependence of the signal in terms of the complex diffusion length. Best fit values for the diffusion length and recombination lifetime are obtained via a nonlinear regression analysis. The output diffusion lengths and recombination lifetimes and their estimated uncertainties may then be used to evaluate various transport properties and their associated uncertainties.

A precise optical technique for measuring electronic transport properties in semiconductors is disclosed. Using tightly focused laser beams in a photo-modulated reflectance system, the modulated reflectance signal is measured as a function of the longitudinal (Z) displacement of the sample from focus. The modulated component of the reflected probe beam is a Gaussian beam with its profile determined by the focal parameters and the complex diffusion length. The reflected probe beam is collected and input to the detector, thereby integrating over the radial profile of the beam. This results in a simple analytic expression for the Z dependence of the signal in terms of the complex diffusion length. Best fit values for the diffusion length and recombination lifetime are obtained via a nonlinear regression analysis. The output diffusion lengths and recombination lifetimes and their estimated uncertainties may then be used to evaluate various transport properties and their associated uncertainties.

An electronics system may include a substrate, an electronic device bonded to the substrate, a plurality of photoluminescent particles disposed on the electronic device, an illuminator, a sensor, and a control module. The illuminator can illuminate the electronic device. The sensor can capture a first set of positions of the photoluminescent particles on the electronic device when the electronic device is not operating under a load and a second set of positions of the photoluminescent particles when the electronic device is operating under a load. The control module can determine thermomechanical stress on the electronic device based at least in part on a difference between the first set of positions and the second set of positions.

A precise optical technique for measuring electronic transport properties in semiconductors is disclosed. The sensitivity of the technique to electronic transport properties follows from a simple analytic expression for the Z dependence of a photo-modulated reflectance signal in terms of the (complex) carrier diffusion length. The sensitivity of the technique to electronic transport properties also enables a trained neural network to predict electronic transport properties directly from Z-scan photo-modulated reflectance data. Synthetic data and/or physical constraints may be derived from the analytical expression and incorporated into a machine learning algorithm. Moreover, electronic transport properties as determined or predicted may be used to enable machine learning based control of semiconductor process tools and/or manufacturing processes, including via advanced reinforcement learning algorithms.

A precise optical technique for measuring electronic transport properties in semiconductors is disclosed. The sensitivity of the technique to electronic transport properties follows from a simple analytic expression for the Z dependence of a photo-modulated reflectance signal in terms of the (complex) carrier diffusion length. The sensitivity of the technique to electronic transport properties also enables a trained neural network to predict electronic transport properties directly from Z-scan photo-modulated reflectance data. Synthetic data and/or physical constraints may be derived from the analytical expression and incorporated into a machine learning algorithm. Moreover, electronic transport properties as determined or predicted may be used to enable machine learning based control of semiconductor process tools and/or manufacturing processes, including via advanced reinforcement learning algorithms.