A precise optical technique for measuring electronic transport properties in semiconductors is disclosed. The sensitivity of the technique to electronic transport properties follows from a simple analytic expression for the Z dependence of a photo-modulated reflectance signal in terms of the (complex) carrier diffusion length. The sensitivity of the technique to electronic transport properties also enables a trained neural network to predict electronic transport properties directly from Z-scan photo-modulated reflectance data. Synthetic data and/or physical constraints may be derived from the analytical expression and incorporated into a machine learning algorithm. Moreover, electronic transport properties as determined or predicted may be used to enable machine learning based control of semiconductor process tools and/or manufacturing processes, including via advanced reinforcement learning algorithms.

A multispectral inspection (MSI) device for analyzing an electronic item having a printed circuit board (PCB). An electronic power supply powers the electronic item in accordance with one or more test vectors. An optical imaging scanner, terahertz (THz) imaging scanner, and a functional imaging scanner are each operative to scan the electronic item. An electronic processor is programmed to scan the various scanners and control the power supply to acquire optical, THz, and functional images of the electronic item. The images are combined to form a standard three-dimensional (3D) signature and artificial intelligence (AI) classifiers are applied to the 3D signature to perform non-destructive analyses of the electronic item.

A multispectral inspection (MSI) device for analyzing an electronic item having a printed circuit board (PCB). An electronic power supply powers the electronic item in accordance with one or more test vectors. An optical imaging scanner, terahertz (THz) imaging scanner, and a functional imaging scanner are each operative to scan the electronic item. An electronic processor is programmed to scan the various scanners and control the power supply to acquire optical, THz, and functional images of the electronic item. The images are combined to form a standard three-dimensional (3D) signature and artificial intelligence (AI) classifiers are applied to the 3D signature to perform non-destructive analyses of the electronic item.

A multispectral inspection (MSI) device for analyzing an electronic item having a printed circuit board (PCB). An electronic power supply powers the electronic item in accordance with one or more test vectors. An optical imaging scanner, terahertz (THz) imaging scanner, and a functional imaging scanner are each operative to scan the electronic item. An electronic processor is programmed to scan the various scanners and control the power supply to acquire optical, THz, and functional images of the electronic item. The images are combined to form a standard three-dimensional (3D) signature and artificial intelligence (AI) classifiers are applied to the 3D signature to perform non-destructive analyses of the electronic item.

A multispectral inspection (MSI) device for analyzing an electronic item having a printed circuit board (PCB). An electronic power supply powers the electronic item in accordance with one or more test vectors. An optical imaging scanner, terahertz (THz) imaging scanner, and a functional imaging scanner are each operative to scan the electronic item. An electronic processor is programmed to scan the various scanners and control the power supply to acquire optical, THz, and functional images of the electronic item. The images are combined to form a standard three-dimensional (3D) signature and artificial intelligence (AI) classifiers are applied to the 3D signature to perform non-destructive analyses of the electronic item.

Methods and systems for generating measurement models of nanowire based semiconductor structures based on re-useable, parametric models are presented herein. Metrology systems employing these models are configured to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with nanowire semiconductor fabrication processes. The re-useable, parametric models of nanowire based semiconductor structures enable measurement model generation that is substantially simpler, less error prone, and more accurate. As a result, time to useful measurement results is significantly reduced, particularly when modelling complex, nanowire based structures. The re-useable, parametric models of nanowire based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology.

Methods and systems for generating measurement models of nanowire based semiconductor structures based on re-useable, parametric models are presented herein. Metrology systems employing these models are configured to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with nanowire semiconductor fabrication processes. The re-useable, parametric models of nanowire based semiconductor structures enable measurement model generation that is substantially simpler, less error prone, and more accurate. As a result, time to useful measurement results is significantly reduced, particularly when modelling complex, nanowire based structures. The re-useable, parametric models of nanowire based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology.

An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

A test structure is presented for use in metrology measurements of a sample pattern. The test structure comprises a main pattern, and one or more auxiliary patterns. The main pattern is formed by a plurality of main features extending along a first longitudinal axis and being spaced from one another along a second lateral axis. The one or more auxiliary patterns are formed by a plurality of auxiliary features associated with at least some of the main features such that a dimension of the auxiliary feature is in a predetermined relation with a dimension of the respective main feature. This provides that a change in a dimension of the auxiliary feature from a nominal value affects a change in non-zero order diffraction response from the test structure in a predetermined optical measurement scheme, and this change is indicative of a deviation in one or more parameters of the main pattern from nominal value thereof.