Patent classifications
G01R31/309
Metrology test structure design and measurement scheme for measuring in patterned structures
A test structure is presented for use in metrology measurements of a sample pattern. The test structure comprises a main pattern, and one or more auxiliary patterns. The main pattern is formed by a plurality of main features extending along a first longitudinal axis and being spaced from one another along a second lateral axis. The one or more auxiliary patterns are formed by a plurality of auxiliary features associated with at least some of the main features such that a dimension of the auxiliary feature is in a predetermined relation with a dimension of the respective main feature. This provides that a change in a dimension of the auxiliary feature from a nominal value affects a change in non-zero order diffraction response from the test structure in a predetermined optical measurement scheme, and this change is indicative of a deviation in one or more parameters of the main pattern from nominal value thereof.
TEST APPARATUS AND METHODS FOR ARC MITIGATION DEVICE
A test apparatus includes an output configured to be coupled to a sense input of an arc quenching device control circuit of an arc quenching system, a user interface, and a control circuit configured to generate a simulated sense signal at the output in response to an input at the user interface, the simulated sense signal representing a physical state associated with a fault condition of a bus coupled to the arc quenching system. The simulated sense signal may be configured to cause the arc quenching device control circuit to trigger an arc quenching device of the arc quenching system. The physical state may include, for example, a voltage condition, a current condition, a temperature, a pressure or a light intensity. In some embodiments, the simulated sense signal may include a current indicative of a current passing through a bus to which the arc quenching system is connected.
Optical electrical measurement system, a measurement probe and a method therefor
The present invention relates to a system, a measurement probe and a method for measuring an electrical property of an electrical circuit, comprising measuring the electrical property by means of a measurement probe connected to the electrical circuit, converting the measured electrical property of the electrical circuit to an optical signal. The method further comprises sending the optical signal, and receiving the optical signal by means of an image sensor configured to record images comprising the measurement probe that transmits the optical signal. The method further comprises processing the recorded images in order to decode the measurement data from the received optical signal.
Apparatus and method for non-contact sample analyzing using terahertz wave
Disclosed are an apparatus and a method for non-contact sample analysis using terahertz waves. The apparatus includes an emission unit radiating terahertz waves onto a sample provided with a conductive material layer, and a receiving unit receiving terahertz waves reflected from the sample or terahertz waves passing through the sample. The apparatus further includes a characteristic analysis unit including at least one selected from a group consisting of a sheet resistance analysis unit analyzing a sheet resistance of the conductive material layer, a coverage density analysis unit analyzing a coverage density of the conductive material layer, a component analysis unit analyzing a component of the conductive material layer, and a thickness analysis unit analyzing a thickness of the conductive material layer by using the received terahertz waves, a display unit displaying a result derived from the characteristic analysis unit as an image, and an input unit configured to input information to the characteristic analysis unit.
Apparatus and method for non-contact sample analyzing using terahertz wave
Disclosed are an apparatus and a method for non-contact sample analysis using terahertz waves. The apparatus includes an emission unit radiating terahertz waves onto a sample provided with a conductive material layer, and a receiving unit receiving terahertz waves reflected from the sample or terahertz waves passing through the sample. The apparatus further includes a characteristic analysis unit including at least one selected from a group consisting of a sheet resistance analysis unit analyzing a sheet resistance of the conductive material layer, a coverage density analysis unit analyzing a coverage density of the conductive material layer, a component analysis unit analyzing a component of the conductive material layer, and a thickness analysis unit analyzing a thickness of the conductive material layer by using the received terahertz waves, a display unit displaying a result derived from the characteristic analysis unit as an image, and an input unit configured to input information to the characteristic analysis unit.
Inspection apparatus
An inspection apparatus comprising, an optical system emitting light having a predetermined wavelength, illuminating a sample while the light is converted into light having a polarization plane not in the range of 5 degrees to 5 degrees and 85 degrees to 95 degrees with respect to a direction of a repetitive pattern on the sample, an optical system for acquiring an image and forming said image on an image sensor using a lens, a half-wave plate, a first image sensor, a second image sensor, an inspection analyzer, wherein these differ in a transmission axis direction, a processor that obtains an average gray level and a standard deviation in each predetermined unit region of the image, and a defect detector, wherein a resolution limit defined by a wavelength of the light source and a numerical aperture of the lens is a value in which the pattern is not resolved.
Wafer level electrical probe system with multiple wavelength and intensity illumination capability system
A wafer level electrical probe system with multiple wavelength and intensity illumination capability system that enables concurrent reliability studies of illumination stimulation, electrical stimulation, and the interplay of both electrical and illumination stimulation. The probe system includes five sub-systems: a controllable wavelength and intensity illumination input sub-system with two different configurations; a wafer level electrical probe sub-system; an illumination intensity calibration sub-system; an illumination delivery sub-system; and an illumination wavelength calibration sub-system.
SOLDER MASK FAULT FIBER OPTICS SENSOR
Aspects of the present disclosure configure a processor to detect faults in a printed circuit board (PCB) solder mask using an optical waveguide. The processor directs an optical beam to an input of one or more optical waveguides embedded in a protective coating layer of a PCB, the protective coating layer being adjacent to one or more traces of the PCB. The processor measures a beam characteristic of the optical beam that is output by the one or more optical waveguides. The processor detects a disruption of the optical beam that is output by the one or more optical waveguides based on the beam characteristic. The processor detects a fault in the protective coating layer of the PCB based on detecting the disruption of the optical beam that is output by the one or more optical waveguides.
SOLDER MASK FAULT FIBER OPTICS SENSOR
Aspects of the present disclosure configure a processor to detect faults in a printed circuit board (PCB) solder mask using an optical waveguide. The processor directs an optical beam to an input of one or more optical waveguides embedded in a protective coating layer of a PCB, the protective coating layer being adjacent to one or more traces of the PCB. The processor measures a beam characteristic of the optical beam that is output by the one or more optical waveguides. The processor detects a disruption of the optical beam that is output by the one or more optical waveguides based on the beam characteristic. The processor detects a fault in the protective coating layer of the PCB based on detecting the disruption of the optical beam that is output by the one or more optical waveguides.
Method and apparatus for generating X-ray inspection image of electronic circuit board
A method and an apparatus for generating x-ray inspection image of an electronic circuit board are disclosed. The method includes: respectively generating, according to data files of the electronic circuit board and parameters of an X-ray machine, analog images of both faces of the electronic circuit board; subjecting the electronic circuit board to X-ray imaging to generate a real image of the electronic circuit board, the real image comprising real image elements on both faces of the electronic circuit board; identifying, according to the analog images of both faces, from the real image an interference image element that needs to be filtered from the real image for generating a real image of a detected object; and filtering the interference image element from the real image to generate the real image of the detected object.