An observation apparatus includes a laser light source, a scanning optical system irradiating a semiconductor device with laser light output from the laser light source, a bias power supply applying a reverse bias voltage of a predetermined voltage between electrodes of the semiconductor device, a sensor detecting an electrical property occurring in the semiconductor device in response to the laser light, and a control system generating an electrical property image of the semiconductor device based on a detection signal from the sensor. The bias power supply gradually increases a magnitude of the predetermined voltage until the predetermined voltage reaches a voltage at which avalanche amplification occurs in the semiconductor device. When the predetermined voltage is increased, the scanning optical system irradiates with the laser light, the sensor detects the electrical property, and the control system generates the electrical property image.

Apparatus for testing microelectronic components on a substrate, including a scanner operative to scan a light beam over a plurality of thin film transistors disposed on a substrate, one transistor at a time, so as to induce a photoconductive response in the plurality of transistors, one transistor at a time; current sensing circuitry operative, synchronously with said scanner, to measure an output induced by the photoconductive response associated with a transistor and to generate photoconductive response output values, the photoconductive response output values representing a photoconductive response induced by the light beam, for one transistor at a time from among the plurality of transistors; and diagnostic apparatus operative to analyze the electronic response output values and to characterize each of the transistors in accordance therewith.

Apparatus for testing microelectronic components on a substrate, including a scanner operative to scan a light beam over a plurality of thin film transistors disposed on a substrate, one transistor at a time, so as to induce a photoconductive response in the plurality of transistors, one transistor at a time; current sensing circuitry operative, synchronously with said scanner, to measure an output induced by the photoconductive response associated with a transistor and to generate photoconductive response output values, the photoconductive response output values representing a photoconductive response induced by the light beam, for one transistor at a time from among the plurality of transistors; and diagnostic apparatus operative to analyze the electronic response output values and to characterize each of the transistors in accordance therewith.

A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; serially inserting one of a plurality of shortpass filters into an optical path of the emission tester and collecting emission test signal from the optical detector until all available shortpass filters have been inserted into the optical path; determining appropriate shortpass filter providing highest signal to noise ratio of the emission signal; inserting the appropriate shortpass filter into the optical path; and, performing emission testing on the DUT.

A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; serially inserting one of a plurality of shortpass filters into an optical path of the emission tester and collecting emission test signal from the optical detector until all available shortpass filters have been inserted into the optical path; determining appropriate shortpass filter providing highest signal to noise ratio of the emission signal; inserting the appropriate shortpass filter into the optical path; and, performing emission testing on the DUT.

THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

An apparatus according to an embodiment comprises: a laser source that outputs a laser beam; an optical system that modifies the laser beam, and directs the modified laser beam onto a test object; a signal detector that detects a change of signal in the process of irradiating the test object with the modified laser beam; and a computer system that performs a failure analysis based on the change detected by the signal detector, wherein the optical system modifies the laser beam so that the modified laser beam generates an irradiation zone that includes a first intensity component of which peak intensity is near an irradiation axis and a second intensity component of which peak intensity is around the irradiation axis.

An apparatus according to an embodiment comprises: a laser source that outputs a laser beam; an optical system that modifies the laser beam, and directs the modified laser beam onto a test object; a signal detector that detects a change of signal in the process of irradiating the test object with the modified laser beam; and a computer system that performs a failure analysis based on the change detected by the signal detector, wherein the optical system modifies the laser beam so that the modified laser beam generates an irradiation zone that includes a first intensity component of which peak intensity is near an irradiation axis and a second intensity component of which peak intensity is around the irradiation axis.

Provided is a method for simulating electricity of a wafer chip. The method includes: a database is constructed, the database including spectroscopic data of a semiconductor structure of the wafer chip obtained from a target key process, actual electrical data of the wafer chip, and a correspondence between the spectroscopic data and the actual electrical data; the target key process is performed on a target wafer chip to obtain the spectroscopic data of the semiconductor structure of the target wafer chip obtained from the target key process, the spectroscopic data being target spectroscopic data; the electrical data of the target wafer chip is simulated based on the obtained target spectroscopic data and the database, the electrical data being target electrical data.