At least three dark field images of a feature on a semiconductor wafer can be formed using an optical inspection system. Each of the at least three dark field images is from a different channel of the optical inspection system using an aperture that is fully open during image generation. The dark field images can be fused into a pseudo wafer image that is aligned with a corresponding design. This alignment can improve care area placement.

Methods for maintaining gap spacing between an optical probe of a probe system and an optical device of a device under test and probe systems that perform the methods. The methods include determining a desired relative orientation between the optical probe and the DUT and optically testing the optical device with the optical probe. The methods also include maintaining the desired relative orientation during the optically testing. The maintaining includes repeatedly and sequentially collecting an existing DUT image of a DUT reference structure of the DUT and an existing probe image of a probe reference structure of the optical probe, determining a probe-DUT offset between an existing relative orientation between the optical probe and the DUT and the desired relative orientation, and adjusting the relative orientation to return the optical probe and the DUT to the desired relative orientation.

An inspection apparatus for inspecting a backside irradiation type imaging device formed on an inspection object includes: a stage on which the inspection object is mounted such that the stage faces a rear surface of the backside irradiation type imaging device, wherein the stage includes: a transmitter including a flat plate formed of a light transmitting material, and configured to mount the inspection object on the transmitter; and a light emitter disposed at a location facing the inspection object with the transmitter interposed between the light emitter and the inspection object, and configured to emit light toward the transmitter, and wherein the transmitter transmits the light from the light emitter while diffusing the light.

An inspection apparatus includes a light sensor that detects light from a semiconductor device to which an electric signal has been input, an optical system that guides light from the semiconductor device to the light sensor, and a control device electrically connected to the light sensor. The control device includes a measurement unit that acquires waveform data obtained by optical measurement for each of a plurality of positions on a defective semiconductor device and waveform data obtained by the optical measurement for each of a plurality of positions on a non-defective semiconductor device, a calculation unit that calculates a degree of correspondence between the waveform data of the defective semiconductor device and the waveform data of the non-defective semiconductor device, and an analysis unit that analyzes a defective part of the defective semiconductor device on the basis of the degree of correspondence for each of the plurality of positions.

Methods of producing augmented probe system images and associated probe systems. A method of producing an augmented probe system image includes recording a base probe system image, generating the augmented probe system image at least partially based on the base probe system image, and presenting the augmented probe system image. The augmented probe system image includes a representation of at least a portion of the probe system that is obscured in the base probe system image. In some examples, a probe system includes a chuck, a probe assembly, an imaging device, and a controller programmed to perform methods disclosed herein.

Methods of producing augmented probe system images and associated probe systems. A method of producing an augmented probe system image includes recording a base probe system image, generating the augmented probe system image at least partially based on the base probe system image, and presenting the augmented probe system image. The augmented probe system image includes a representation of at least a portion of the probe system that is obscured in the base probe system image. In some examples, a probe system includes a chuck, a probe assembly, an imaging device, and a controller programmed to perform methods disclosed herein.

A semiconductor device examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor device, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

A semiconductor apparatus examination method includes a step of detecting light from a plurality of positions in a semiconductor apparatus (D) and acquiring a waveform corresponding to each of the plurality of positions, a step of extracting a waveform corresponding to a specific timing from the waveform corresponding to each of the plurality of positions and generating an image corresponding to the specific timing based on the extracted waveform, and a step of extracting a feature point based on a brightness distribution correlation value in the image corresponding to the specific timing and identifying a position of a drive element in the semiconductor apparatus based on the feature point.

Laser-assisted integrated circuit (IC) device testing apparatus capable of inducing hot carrier injection (HCI) within selected transistors of an IC device. A laser source of sufficiently high output power (e.g., 1W) and short pulse duration (e.g., 100 fs) can generate enough hot carriers through a multi-photon (e.g., TPA) carrier injection mechanism to significantly accelerate HCI aging even at low transistor voltage bias (e.g., <1.5V). Rapid laser-assisted HCI transistor aging can selectively degrade transistors of individual functional IC blocks within an IC device.

A pulsed-laser LADA system is provided, which utilizes temporal resolution to enhance spatial resolution. The system is capable of resolving CMOS pairs within the illumination spot using synchronization of laser pulses with the DUT clock. The system can be implemented using laser wavelength having photon energy above the silicon bandgap so as to perform single-photon LADA or wavelength having photon energy below the silicon bandgap so as to generate two-photon LADA. The timing of the laser pulses can be adjusted using two feedback loops tied to the clock signal of an ATE, or by adjusting the ATE's clock signal with reference to a fixed-pulse laser source.