A thermal abnormality detection system includes: a first heat dissipation system having a first temperature sensor for measuring an actual temperature of the first heat dissipation system; a second heat dissipation system having a second temperature sensor for measuring an actual temperature of the second heat dissipation system. Assuming that a difference between the actual temperature of the first heat dissipation system and an upper limit temperature of the first heat dissipation system is d1, and a difference between the actual temperature of the second heat dissipation system and an upper limit temperature of the second heat dissipation system is d2, when a value of d1−d2 is greater than an error threshold value Error1_level, the first heat dissipation system is determined to be abnormal, and when the value of d1−d2 is less than an error threshold value Error2_level, the second heat dissipation system is determined to be abnormal.

A method of testing a multiple power domain device includes sending a control signal from a test controller powered by a switchable power domain to a non-scan test data register powered by an always on power domain. The method further includes setting, using the control signal, a test data register value of the register to enable scan mode by bypassing an isolation cell between an output of the switchable domain and an input of the always on domain and, while the register value continuously enables scan mode: shifting a test pattern into a scan chain including a flip-flop coupled to the isolation cell, capturing a test result from the scan chain, and shifting the test pattern out of the scan chain to observe the test result. The isolation cell is configured to allow or disallow propagation of a signal from the output to the input.

A stacked semiconductor device may include: a base die; and a plurality of core dies stacked over the base die and coupled to each other through a plurality of through-electrodes and a reference through-electrode, wherein the base die includes a first test circuit suitable for transferring a test oscillating signal to at least one target through-electrode among the through-electrodes, and outputting a test output signal by comparing a test base signal generated based on the test oscillating signal, with a test core signal transferred through the reference through-electrode, during a test operation; and wherein each of the core dies includes a second test circuit suitable for generating the test core signal corresponding to the test oscillating signal transferred through the target through-electrode, and transferring the test core signal to the reference through-electrode, during the test operation.

A bonded structure is disclosed. The bonded structure can include a first element that has a first plurality of contact pads. The first plurality of contact pads includes a first contact pad and a second redundant contact pad. The bonded structure can also include a second element directly bonded to the first element without an intervening adhesive. The second element has a second plurality of contact pads. The second plurality of contact pads includes a third contact pad and a fourth redundant contact pad. The first contact pad is configured to connect to the third contact pad. The second contact pad is configured to connect to the fourth contact pad. The bonded structure can include circuitry that has a first state in which an electrical signal is transferred to the first contact pad and a second state in which the electrical signal is transferred to the second contact pad.

The present disclosure describes exemplary methods and systems that are applicable for hardware authentication, counterfeit detection, and in-field tamper detection in both printed circuit board and/or integrated circuit levels by utilizing random variations in boundary-scan path delay and/or current in the industry-standard JTAG-based design-for-test structure to generate unique device identifiers.

An integrated circuit (IC) with a TSV test circuit, a TSV test method are provided, pertaining to IC technologies. The IC may include a first TSV, a second TSV and a phase detector. A first end of the first TSV may be coupled to a predetermined signal output, and a second end of the first TSV may be coupled to a first end of the second TSV. A second end of the second TSV may be coupled to a first input of the phase detector, and a second input of the phase detector may be coupled to the predetermined signal output. The phase detector may be configured to determine a phase difference between signals at the first and the second inputs. In this IC, a defective TSV can be identified and segregated with a redundant TSV. This IC facilitates efficient fault correction and signal routing in the IC.

Disclosed is a plurality of through-silicon vias (TSVs) and related systems, methods, and devices. An electronic device includes a stack of chips, a first TSV, and a second TSV. The stack of chips includes one or more side edges at a perimeter of the stack of chips. A TSV zone of the stack of chips is within a predetermined distance from the one or more side edges. The first TSV is within the TSV zone of the stack of chips at a first distance from the one or more side edges. The second TSV is within the TSV zone of the stack of chips at a second distance from the one or more side edges. The second distance is shorter than the first distance.

An integrated circuit chip comprising: system circuitry comprising interconnect circuitry for transporting transactions; and monitoring circuitry configured to: monitor transactions from the interconnect circuitry comprising transactions between an entity and a specified region of the integrated circuit chip, the entity being associated with a set of one or more access rights for accessing the specified region of the integrated circuit chip; determine from the monitored transactions values of one or more parameters associated with the access to the specified region by the entity to identify whether the entity has breached its access rights; and perform a dedicated action indicative of a breach of the access rights in response to determining from the parameter values that the entity has breached its access rights.

A semiconductor die includes a feedback path coupled to the output pin, and an integrity monitor circuit (IMC). The output pin is communicatively coupled to the logic. The IMC is configured to receive a data value. The IMC is further configured to receive measured data value from the output pin routed through the feedback path, compare the data value and the measured data value, and, based on the comparison, determine whether an error has occurred.

A method and apparatus for evaluating and optimizing a signaling system is described. A pattern of test information is generated in a transmit circuit of the system and is transmitted to a receive circuit. A similar pattern of information is generated in the receive circuit and used as a reference. The receive circuit compares the patterns. Any differences between the patterns are observable. In one embodiment, a linear feedback shift register (LFSR) is implemented to produce patterns. An embodiment of the present disclosure may be practiced with various types of signaling systems, including those with single-ended signals and those with differential signals. An embodiment of the present disclosure may be applied to systems communicating a single bit of information on a single conductor at a given time and to systems communicating multiple bits of information on a single conductor simultaneously.