The disclosure relates to a scintillation pixel array, a radiation sensing apparatus, a scintillation apparatus, and methods of making a scintillation pixel array wherein scintillation pixels have beveled surfaces and a reflective material around the beveled surfaces. The embodiments described herein can reduce the amount of cross-talk between adjacent scintillation pixels.

The radiation detector (10) comprises a scintillator (15) having a first refractive index (n.sub.s) for converting incident radiation (RR) received at a first side (S1) of the radiation detector (10) into converted radiation (CR), a photosensor (20) for receiving the converted radiation (CR) from the scintillator (15), and an optical coating layer (25) arranged between the scintillator (15) and the photosensor (20). The scintillator (15) has regions (RR) arranged for being imaged, when impinged by the incident radiation (RR), onto corresponding regions of the photosensor (20). The optical coating layer (25) has a second refractive index (n.sub.o) lower than the first refractive index (n.sub.s) for reflecting the converted radiation (CR) resulting from the incident radiation (RR) impinged on a particular region (A1) of the scintillator (15) and received by a region (A3) of the optical coating layer (25) corresponding to a photosensor region different from the imaged one (A2).

The semiconductor device comprises a substrate of semiconductor material having a main surface, an integrated circuit in the substrate, a photodetector element or array of photodetector elements arranged at or above the main surface, and at least one nanomaterial film arranged above the main surface. At least part of the nanomaterial film has a scintillating property. The method of production includes the use of a solvent to apply the nanomaterial film, in particular by inject printing, by silk-screen printing, by spin coating or by spray coating.

A curved radiographic detector has electromagnetic radiation sensitive elements disposed in a two-dimensional array. A curved housing encloses the two-dimensional array of radiation sensitive elements and includes a layer of aligned carbon nanotubes on a surface thereof.

There is provided a radiation image pickup unit including: a plurality of pixels each configured to generate a signal charge based on a radiation; a device substrate including a photoelectric conversion element for each pixel; a wavelength conversion layer provided on a light incident side of the device substrate, and configured to convert a wavelength of the radiation into other wavelength; and a partition wall separating the wavelength conversion layer for each pixel. The radiation image pickup unit is configured to allow a gap between the wavelength conversion layer and the device substrate to be equal to or larger than a threshold or equal to or smaller than the threshold, the threshold being preset based on a spatial frequency of an image pickup target.

The invention concerns a scintillation detector with which high count rates and/or high resolutions are possible. The scintillator of the claimed scintillation detector is formed from pixels (2), which are separated from each other by interstices (4). Alternatively or additionally, the surface of the scintillator is divided by grooves into pixels (2). Such a structure enables not only a particularly high resolution. When multiple detector modules are used, it also allows high count rates in the range of roughly 20 MHz.

Embodiments of the disclosure provide a ray detector, which comprises a ray conversion layer for converting a ray incident on the ray detector into visible light, a photoelectric conversion layer for receiving the visible light and converting it into a charge signal, a pixel array having a plurality of pixels for detecting the charge signal, and a substrate below the photoelectric conversion layer, at least for directly or indirectly carrying the photoelectric conversion layer. The photoelectric conversion layer is made from a two-dimensional semiconductor material. Due to the high carrier mobility of the two-dimensional semiconductor material, it is possible to enable the external signal processing system to detect the charge signal more easily, so that a ray source with low energy can be used for ray detection. Therefore, a ray detector with high sensitivity can be provided, which may reduce the is usage cost and be advantageous to saving energy.

In a method of making pixelated scintillators, a block of an amorphous scintillator material is divided into plural sections. The plural sections of the block are rejoined with plural first reflective septa to form an assembly. In the assembly, each of the plural first reflective septa separates two adjacent sections of the block. The assembly is then divided into plural sections in a way such that each of the plural sections of the block is divided into plural pixels. The plural sections of the assembly are rejoined with plural second reflective septa. Each of the plural second reflective septa separates two adjacent sections of the assembly, forming an array comprising plural rows and columns of pixels of the amorphous scintillator material. In the array, each pixel is separated from adjacent pixels by a portion of at least one of the plural first reflective septa and at least one of the second reflective septa.

A detector configuration that combines a plurality of elongated semiconductor photo-multiplier sensor strips coupled to a scintillator crystal block with a differential readout that will enhance the time resolution. This is permitted due to a reduction of electronic noise due to reduced cross talk and noise in the ground. In addition, the dead area is minimized and thus the efficiency of the photodetector is enhanced.

Among other things, a detector array (300) for a radiation imaging system is provided. The detector array comprises a plurality of detector elements. Respective detector elements comprise, among other things, a scintillator (304) and a photodetector (306). In some embodiments, a scintillator is shared amongst two or more of the detector elements. In some embodiments, little to no reflective material, configured to mitigate cross-talk between detector elements, is situated between two or more detector elements.