A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

A radiation detector including: a substrate formed with plural pixels that accumulate electrical charges generated in response to light converted from radiation in a pixel region at an opposite-side surface of a base member to a surface including a fine particle layer; the base member being flexible and is made of resin and that includes a fine particle layer containing inorganic fine particles having a mean particle size of from 0.05 μm to 2.5 μm, a conversion layer provided at the surface of the base member provided with the pixel region and configured to convert the radiation into light; and a reinforcement substrate provided to at least one out of a surface on the substrate side of a stacked body configured by stacking the substrate and the conversion layer, or a surface on the conversion layer side of the stacked body.

The present specification describes an X-ray detector that includes at least one scintillator screen for absorbing incident X rays and emitting corresponding light rays, a wavelength shifting sheet (WSS) coupled with the at least one scintillator screen for shifting the emitted light rays, at least one wavelength shifting fiber (WSF) coupled with at least one edge of the WSS for collecting the shifted light rays, and a photodetector for detecting the collected light rays.

An optical detection unit includes a first wiring substrate that has a first main surface, a plurality of optical detection chips that each have a light receiving surface and a rear surface on a side opposite to the light receiving surface and are two-dimensionally arranged on the first main surface, a first bump electrode that electrically connects the optical detection chip to the first wiring substrate, a light transmitting portion that is provided on the light receiving surface, and a light shielding portion that has light reflection properties or light absorption properties. The optical detection chip includes a Geiger-mode APD and is mounted on the first wiring substrate by the first bump electrode in a state in which the rear surface faces the first main surface.

A computed tomography (CT) detector array (120) includes a monolithic scintillator (124). The monolithic scintillator includes at least a first scintillator region (202), a second scintillator region (206), and an optically reflective barrier (210) therebetween. The detector array is configured to detect X-ray radiation traversing an examination region and impinging the monolithic scintillator and generate first projection data indicative of an energy of x-ray radiation absorbed by the first scintillator region and second projection data indicative of an energy of x-ray radiation traversing the first scintillator and absorbed by the second scintillator region.

Micrometer-scale x-ray photodetectors that utilize a flexible array of photodiodes wrapped around the circumference of a scintillator core are provided. The photodetectors use dense and flexible pixelated arrays of photodiodes disposed around the circumference of a crystalline scintillator to provide highly compact photodetectors with high spatial, temporal, and energy resolution.

An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.

On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.

Disclosed herein are variations of megavoltage (MV) detectors that may be used for acquiring high resolution dynamic images and dose measurements in patients. One variation of a MV detector comprises a scintillating optical fiber plate, a photodiode array configured to receive light data from the optical fibers, and readout electronics. In some variations, the scintillating optical fiber plate comprises one or more fibers that are focused to the radiation source. The diameters of the fibers may be smaller than the pixels of the photodiode array. In some variations, the fiber diameter is on the order of about 2 to about 100 times smaller than the width of a photodiode array pixel, e.g., about 20 times smaller. Also disclosed herein are methods of manufacturing a focused scintillating fiber optic plate.