The X-ray detection device according to an aspect of the present disclosure includes a scintillator that generates scintillation light in response to incident X-rays; a detection unit including a plurality of pixels each generating a pixel signal in response to the scintillation light incident thereon; and an output unit that generates X-ray two-dimensional projection data by using the pixel signals of the pixels. A pixel of the detection unit includes a plurality of subpixels that performs photoelectric conversion in response to the scintillation light; an AD conversion unit that applies AD conversion to outputs of the subpixels; and an adder that generates the pixel signal corresponding to the pixel by adding up outputs of the plurality of subpixels after the AD conversion. The present disclosure is applicable to an X-ray CT device and an X-ray FPD device.

The present specification describes an improved multi-energy radiation detector. In one embodiment, the signal generated by the detection medium is converted to digital form directly at the point of signal collection. This avoids the need for power intensive high bandwidth amplifiers and analog-to-digital converters, as it integrates the sensing device and signal processing onto the same silicon substrate to reduce the number of components in the system. In one embodiment, a single photon avalanche diode (SPAD) is coupled directly to a threshold detector to achieve an intrinsically low power and low noise detector.

An apparatus (e.g., an imaging system) includes a circuit, including: a p-i-n diode having a cathode coupled to a cathode bias voltage or ground; a charge transistor having a first source/drain terminal coupled to an anode of the diode; a storage capacitor having a first terminal coupled to a second source/drain terminal of the charge transistor and a second terminal coupled to the cathode; an amplification transistor having a gate terminal coupled to the first terminal of the storage capacitor and a first source/drain terminal coupled to a reference voltage; a read transistor having a first source/drain terminal coupled to a second source/drain terminal of the amplification transistor; a data line having a first terminal coupled to a second source/drain terminal of the read transistor; and a readout circuit coupled to a second terminal of the data line, providing an output voltage corresponding to charge on the storage capacitor.

According to one embodiment, a sensitivity correction method includes acquiring count rates for respective pixels in a photon counting detector; preparing incident dose adjustment materials for the respective pixels based on the count rates for the respective pixels; and providing the incident dose adjustment materials in a surface of the photon counting detector.

A detector is described having readout electronics integrated in the photodetector layer. The detector may be configured to acquire both energy-integrated and photon-counting data. In one implementation, the detector is also configured with control logic to select between the jointly generated photon-counting and energy-integrated data.

An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

A radiation detector includes a substrate, control lines provided on the substrate and extending in a first direction, data lines provided on the substrate and extending in a second direction crossing the first direction, and detection parts arranged in a matrix. Each detection part includes a thin film transistor and a conversion part converting radiation or light into electricity. Further, a control circuit switches an on state and an off state of each thin film transistor and a signal detection circuit reads out image data in the on state of the thin film transistor. Further, the detector judges a start time of radiation incidence based on a value of the image data read out in the on state of each thin film transistor.

A detection substrate, a ray imaging device, and a method for driving a detection substrate are provided. The detection substrate includes a base substrate; a plurality of sensing TFTs; a plurality of signal read lines; a compensation TFT row including a plurality of compensation TFTs, wherein a first electrode of each of the compensation TFTs is electrically connected to the same signal read line as first electrodes of the sensing TFTs in corresponding sensing TFT column. As for the sensing TFTs and the compensation TFT electrically connected to the same signal read line, the first electrodes of both the sensing TFTs and the compensation TFT are source electrodes or drain electrodes, source-drain directions of the sensing TFTs are consistent with one another, and a source-drain direction of the compensation TFT is opposite to each of the source-drain directions of the sensing TFTs.

The present invention relates to X-ray imaging. In order to reduce X-ray dose exposure during X-ray image acquisition, an X-ray detector is provided that is suitable for phase contrast and/or dark-field imaging. The X-ray detector comprises a scintillator layer (12) and a photodiode layer (14). The scintillator layer is configured to convert incident X-ray radiation (16) modulated by a phase grating structure (18) into light to be detected by the photodiode layer. The scintillator layer comprises an array of scintillator channels (20) periodically arranged with a pitch (22) forming an analyzer grating structure. The scintillator layer and the photodiode layer form a first detector layer (24) comprising a matrix of pixels (26). Each pixel comprises an array of photodiodes (28), each photodiode forming a sub-pixel (30). Adjacent sub-pixels during operation receive signals having mutually shifted phases. The sub-pixels that during operation receive signals having mutually identical phase form a phase group per pixel. The signals received by the sub-pixels within the same phase group per pixel during operation are combined to provide one phase group signal (32). The phase group signals of different phase groups during operation are obtained in one image acquisition. In an example, the pitch of the scintillator channels is detuned by applying a correcting factor c to a fringe period (P.sub.fringe) of a periodic interference pattern (35) created by the phase grating structure, wherein 0<c<2.

A scintillation block detector employs an array of optically air coupled scintillation pixels, the array being wrapped in reflector material and optically coupled to an array of silicon photomultiplier light sensors with common-cathode signal timing pickoff and individual anode signal position and energy determination. The design features afford an optimized combination of photopeak energy event sensitivity and timing, while reducing electronic circuit complexity and power requirements, and easing necessary fabrication methods. Four of these small blocks, or miniblocks, can be combined as optically and electrically separated quadrants of a larger single detector in order to recover detection efficiency that would otherwise be lost due to scattering between them. Events are validated for total energy by summing the contributions from the four quadrants, while the trigger is generated from either the timing signal of the quadrant with the highest energy deposition, the first timing signal derived from the four quadrant time-pickoff signals, or a statistically optimum combination of the individual quadrant event times, so as to maintain good timing for scatter events. This further reduces the number of electronic channels required per unit detector area while avoiding the timing degradation characteristic of excessively large SiPM arrays.