An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

A sensor unit (14) for a radiation detector (12), the sensor unit (14) comprising a conversion element (22) comprising a plurality of imaging pixels (30), wherein each imaging pixel (30) is configured to directly convert radiation into an electrical charge and wherein each imaging pixel (30) comprises a charge collection electrode (28); and a readout substrate (24) comprising a plurality of readout pixels (32), wherein each readout pixel (32) is connected to an associated imaging pixel (30) by means of an interconnection (36) at a connection position on the charge collection electrode (28); wherein each readout pixel (32) has a smaller area than an associated imaging pixel (30) of the plurality of imaging pixels (30); and wherein the connection positions in relation to the charge collection electrodes (28) are varied with respect to a neighboring charge collection electrode (28). A radiation detector (12) and a method of manufacturing a sensor unit (14) are also provided.

The present invention relates to a photon counting detector comprising a first direct conversion layer (10) comprising a low-absorption direct conversion material (11) for converting impinging high-energy electromagnetic radiation (100) into a first count signal and first electrical contacts (12), a second direct conversion layer (20) comprising a high-absorption direct conversion material (21) for converting impinging high-energy electromagnetic radiation (100) into a second count signal and second electrical contacts (22), said high-absorption direct conversion material having a higher absorption than said low-absorption direct conversion material, and a carrier layer (30, 30a, 30b) comprising first and second terminals (31, 32) in contact with the first and second electrical contacts and processing circuitry (35) configured to correct, based on the first count signal, the second count signal for errors, wherein said first direct conversion layer and the second direct conversion layer are arranged such that the high-energy electromagnetic radiation transmits the first direct conversion layer before it hits the second direct conversion layer.

An image sensor including a pixel array which includes pixels for sensing a reflected signal, incident on the pixel array to form reflected light spots separated from each other. Each pixel includes a photodetector and a readout circuit. The photodetector is configured to detect the reflected signal and output a photo response signal. The readout circuit is configured to generate a pixel output according to the photo response signal. The pixels include a first pixel and a second pixel adjacent to the first pixel along a first predetermined direction. The readout circuit of the first pixel is adjacent to the photodetector of the second pixel along the first predetermined direction, and adjacent to the photodetector of the first pixel along a second predetermined direction perpendicular to the first predetermined direction. The pixel array has a small pixel pitch and a high fill factor.

An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.

A method of fabricating a semiconductor detector device to exhibit a target sensitivity to incident radiation in a predetermined energy range is described, the method comprising: providing a semiconductor detector; defining on a detector surface of the semiconductor detector a large plurality of pixels; wherein the detector is geometry is controlled with reference to the size of the said pixels such that a single interaction event in the predetermined energy range will produce a detectable signal in each of a plurality of adjacent pixels making up a cluster of at least three pixels. A detector fabricated by such a method and a method of obtaining spectral information about incident radiation using such a detector are also described.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

The invention relates to energy-resolved X-ray imaging apparatus and method. The present disclosure provides an apparatus for electromagnetic irradiation imaging. The apparatus includes one or more pixels, each pixel including a plurality of detector cells arranged in a row extending in a row direction. The row is configured to receive photons at an incident surface at one end of the row, and the received photons penetrate the plurality of detector cells in the row direction. The plurality of detector cells of the same row are configured to generate respective signals that collectively indicate an energy-resolved spectral profile of the photons based on the penetration of the photons into the row of detector cells

Disclosed herein is a detector, comprising: a plurality of pixels; a first guard ring comprising a plurality of segments, wherein the detector is configured to detect charge carriers collected by the segments; a controller configured to detect charge sharing between at least one pixel of the plurality of pixels and at least one segment of the first guard ring.