An apparatus suitable for detecting radiation, comprising: a radiation absorption layer comprising a semiconductor, a first electrical contact and a second electrical contact, the first electrical contact positioned across the semiconductor from the second electrical contact; a DC-to-DC converter configured to apply a DC voltage between the first electrical contact and the second electrical contact, the DC-to-DC converter comprising micro-electromechanical switches.

The radiation detection element comprising a semiconductor part having a plate shape, a first electrode that is disposed on a first surface being one surface of the semiconductor part and that collects charges generated by incidence of radiation in the semiconductor part, a second electrode that is disposed on a second surface being the other surface of the semiconductor part and that is applied with voltage needed for collecting the charges, and a heavily-doped layer that is disposed at a region of the second surface excluding an edge of the semiconductor part and is doped heavier than the semiconductor part with dopants for making a type of a semiconductor equal to that of the semiconductor part. The heavily-doped layer is on the second surface located at a position overlapped with the second electrode and is thicker than the second electrode.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

The present disclosure provides a neutral atom imaging unit, a neutral atom imager, a neutral atom imaging method, and a space detection system. The neutral atom imaging unit includes at least one set of detection units, the at least one set of detection units includes: at least one semiconductor detector line array, each semiconductor detector line array includes a semiconductor detector strip composed of a plurality of semiconductor detectors; and at least one modulation grid. The modulation grid includes a slit and a slat forming the slit; the modulation grid includes a plurality of grid periods, each of the grid periods includes n slits, the width of the semiconductor detector strip is d, and the width (w.sub.i) of the i-th slit of the modulation grid satisfies the following relationship:

[00001]$w_i=\frac{n}{i}\times d.$

An exposure record totalizer includes: a hardware processor that adds up a first exposure record of a first exposure image and a second exposure record of a second exposure image, when a radiography system generates the first exposure image through first exposure and the second exposure image through second exposure, and that links information about a third exposure record to a third exposure image generated on the basis of the first exposure image and the second exposure image, the third exposure record being generated by the hardware processor.

A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

Disclosed herein are methods of making and using an absorption-unit array suitable for X-ray detection and a detector comprising such an absorption-unit array. The methods of making the absorption-unit array may include forming the absorption-unit array on a substrate and forming a guard ring encompassing more than one absorption units of the absorption-unit array after separating the absorption-unit array from the substrate; or may include forming a plurality of absorption units and a guard ring encompassing more than one of the absorption units on a portion of a substrate after separating the portion from the substrate. The method of using an absorption-unit array may include using some of the absorption units of the absorption-unit array as a guard ring by applying an electrical voltage. A detector suitable for X-ray detection comprises an absorption layer and an electronics layer, wherein the absorption layer comprises an absorption-unit array.

Disclosed herein is a radiation detector system, comprising a radiation detector, the radiation detector comprising a semiconductor substrate and a pixel array in the semiconductor substrate, wherein the pixel array comprises (a) M first-row pixels, and (b) N second-row pixels, both M and N being positive integers and greater than 1, and wherein each pixel of the N second-row pixels is larger than any pixel of the M first-row pixels in a radiation direction perpendicular to a straight line segment having a first end in a first-row end pixel of the M first-row pixels and a second end in a second-row end pixel of the M first-row pixels.

Disclosed herein is system comprising: a radiation source; an image sensor; wherein the image sensor comprises a first radiation detector and a second radiation detector, respectively comprising a planar surface configured to receive radiation from the radiation source; wherein the planar surface of the first radiation detector and the planar surface of the second radiation detector are not parallel; wherein the first radiation detector and the second radiation detector are configured to move to a plurality of positions relative to the radiation source; wherein the image sensor is configured to capture, by using the first radiation detector and the second radiation detector and with the radiation, images of portions of a scene at the positions respectively, and configured to form an image of the scene by stitching the images of the portions; wherein the system is configured to rotate relative to the scene about a third axis.

Disclosed is a semiconductor radiation detector assembly including a detector chip having a front side for receiving radiation and a back side; and a flexible substrate including a center portion having its front side attached to the back side of the detector chip and a plurality of strips extending from the center portion and bent to protrude away from the detector chip, wherein the flexible substrate includes a plurality of conductive tracks that extend on a surface of the strips from the center portion towards lateral ends of the strips for electrical coupling and mechanical attachment to one of a plurality of contact pins, and wherein the detector chip is electrically coupled to at least one of the conductive tracks.