Patent classifications
G02B2006/12038
WAVEGUIDE OF AN SOI STRUCTURE
A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.
THIN FILM OPTICAL WAVEGUIDE AND PREPARATION METHOD THEREFOR
A thin film optical waveguide includes a silicon-based substrate, a cladding layer arranged on the silicon-based substrate, and an optical waveguide core layer arranged on the silicon-based substrate. The optical waveguide core layer is arranged in the cladding layer, the optical waveguide core layer includes a double-layer optical waveguide dielectric thin film and a thin film material interlayer arranged between the double-layer optical waveguide dielectric thin film, the thin film material interlayer has a two-dimensional lattice sub-wavelength structure, and the effective lattice constant and the duty cycle of the two-dimensional lattice sub-waveguide structure have at least one numerical value in the same propagation direction. The thin film optical waveguide overcomes the limits of technology and materials, achieves a variable effective refractive index in same propagation direction, satisfies complex design and application scenarios, and reduces the difficulty of manufacturing the thin film optical waveguide having a variable effective refractive index.
POSITION CONTROLLED WAVEGUIDES AND METHODS OF MANUFACTURING THE SAME
Position controlled waveguides and methods of manufacturing the same are disclosed. An example apparatus includes a substrate with a channel that extends into a first surface of the substrate to a second surface of the substrate, wherein the second surface is recessed relative to the first surface; buffer material having a first index of refraction on the second surface of the substrate; and a waveguide on the buffer material, the waveguide having a second index of refraction that is higher than the first index of refraction.
OPTICAL DEVICE
An optical device including: a substrate; an optical waveguide formed at the substrate; and a protective layer formed adjacent to the optical waveguide, wherein the optical waveguide includes multiple side surfaces that intersect the substrate, at least one side surface of the optical waveguide is provided with a rough surface. According to the optical device of the present invention, the light propagation loss can be reduced.
Monolithically integrated waveguide sensors on diamond display glass system and method
A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.
THERMALLY MODULATED PHOTONIC SWITCH AND ASSOCIATED METHODS
Embodiments of a thermally modulated photonic switch are presented herein. One embodiment comprises a topology-optimized structure that includes dispersed silicon and silicon dioxide. This topology-optimized structure includes an input waveguide, a first output waveguide, and a second output waveguide. The topology-optimized structure routes a light beam from the input waveguide to the first output waveguide, when the topology-optimized structure is at a first predetermined temperature that causes a refractive index of the silicon in the topology-optimized structure to assume a first predetermined value, and the topology-optimized structure routes a light beam from the input waveguide to the second output waveguide, when the topology-optimized structure is at a second predetermined temperature that causes the refractive index of the silicon in the topology-optimized structure to assume a second predetermined value that is distinct from the first predetermined value.
Back end of line process integrated optical device fabrication
An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.
METHOD FOR FABRICATING A PHOTONIC CHIP
The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.
WAFER SCALE BONDED ACTIVE PHOTONICS INTERPOSER
There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.
MULTI-MODE WAVEGUIDE USING SPACE-DIVISION MULTIPLEXING
A multi-mode optical waveguide device is formed from a plurality of periodically structured waveguides, where each waveguide is configured to guide a carrier signal comprising one spatial mode of a plurality of spatial modes and has at least one segment of each waveguide with a waveguide width that periodically changes along a waveguide path to induce coupling between pairs of spatial modes. In some embodiments, the at least one segment is disposed at a location along the waveguide path at which maximal mode overlap occurs. The waveguide device may be used as for space-division multiplexing and as an optical switch.