A terahertz (THz) waveguide and method for production allows for THz waveguides to be used in or on a printed circuit board (PCB) such that the propagation of THz waves require less power, result in less signal loss due to radiation or dispersion, and propagate more efficiently. Additionally, the position and/or geometry of a waveguide, as well as any additional antenna or coupling element, may be adjusted on or in the PCB such that the electromagnetic field of the waveguide may more efficiently couple with the electromagnetic field of the PCB.

A plurality of waveguide display substrates, each waveguide display substrate having a cylindrical portion having a diameter and a planar surface, a curved portion opposite the planar surface defining a nonlinear change in thickness across the substrate and having a maximum height D with respect to the cylindrical portion, and a wedge portion between the cylindrical portion and the curved portion defining a linear change in thickness across the substrate and having a maximum height W with respect to the cylindrical portion. A target maximum height D.sub.t of the curved portion is 10.sup.-7 to 10.sup.-6 times the diameter, D is between about 70% and about 130% of D.sub.t, and W is less than about 30% of D.sub.t.

Techniques for signal amplification for a photonic integrated circuit (PIC) die are disclosed. In the illustrative embodiment, an optical fiber is coupled to an input signal waveguide in a glass interposer, and an input signal waveguide of a PIC die is coupled to the input signal waveguide of the glass interposer. In order to compensate for any coupling losses, the input signal waveguide of the glass interposer is active, amplifying an input signal. Light in a pump waveguide near the input signal waveguide pumps ions in the input signal waveguide into a population inversion, allowing them to amplify the input signal.

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

An optical switch has latched switch states and includes optical fibers that are laterally joined together to define an optical switching portion. At least one phase change material (PCM) layer is on the optical switching portion so that a phase of the PCM layer determines a latched switch state from among the latched switch states.

An optical device is provided. The optical device includes a substrate, a first optical layer; a high k layer, and a second optical layer. The first optical layer is disposed on the substrate. The first optical layer comprises a top surface, a first sidewall, and a second side-wall opposite thereto. The high k layer is disposed on the top surface of the first optical layer. The second optical layer is disposed on the high k layer. The second optical layer includes a top surface, a third sidewall, and a fourth sidewall opposite thereto. The first sidewall of the first optical layer is misaligned with the third sidewall of the second optical layer. The second sidewall of the first optical layer is coplanar with the fourth sidewall of the second optical layer.

The present invention concerns an optical coupling device including at least one supporting layer comprising a first support wall and a second support wall. The at least one supporting layer comprises at least one bridging waveguide for coupling electromagnetic radiation to and from an optical resonator or optical device, the at least one bridging waveguide extending between the first support wall and the second support wall.

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

There is set forth herein an optoelectrical system comprising: a conductive path for supplying an input voltage to a photonics device, wherein the conductive path comprises a base structure through via extending through a substrate and a photonics structure through via, the photonics structure through via extending through a photonics device dielectric stack. There is set forth herein an optoelectrical system comprising: a second structure fusion bonded to an interposer base dielectric stack of a first structure. There is set forth herein a method comprising: fabricating a second wafer built structure using a second wafer, the second wafer built structure defining a photonics structure and having a photonics device integrated into a photonics device dielectric stack of the second wafer based structure; and wafer scale bonding the second wafer built structure to a first wafer built structure.

A second core includes a first portion, a second portion, and a bending portion. In the first portion, a wave-guiding direction is a first direction parallel to a plane of a first substrate. In the second portion, a wave-guiding direction is a second direction that is at a predetermined angle with respect to the plane of the first substrate. For example, in the second portion, the wave-guiding direction is the second direction that is at substantially 90 degrees with respect to the plane of the first substrate. The bending portion connects the first portion and the second portion. A relative refractive index difference between the second core and a cladding of the second optical waveguide preferably has a value such that the propagation loss in the bending portion is equal to or smaller than 0.1 dB.