A thin film optical waveguide includes a silicon-based substrate, a cladding layer arranged on the silicon-based substrate, and an optical waveguide core layer arranged on the silicon-based substrate. The optical waveguide core layer is arranged in the cladding layer, the refractive index of the optical waveguide core layer is higher than that of the cladding layer, the optical waveguide core layer comprises a double-layer optical waveguide dielectric thin film and a thin film material interlayer arranged between the double-layer optical waveguide dielectric thin film, the thin film material interlayer has a two-dimensional lattice sub-wavelength structure, and the thin film material interlayer is a negative thermo-optical coefficient material used for performing thermo-optical coefficient compensation on the optical waveguide dielectric thin film.

A thin film optical waveguide includes a silicon-based substrate, a cladding layer arranged on the silicon-based substrate, and an optical waveguide core layer arranged on the silicon-based substrate. The optical waveguide core layer is arranged in the cladding layer, the refractive index of the optical waveguide core layer is higher than that of the cladding layer, the optical waveguide core layer includes a double-layer optical waveguide dielectric thin film and a thin film material interlayer arranged between the double-layer optical waveguide dielectric thin film, the thin film material interlayer has a two-dimensional lattice sub-wavelength structure, and the effective lattice constant and the duty cycle of the two-dimensional lattice sub-wavelength structure are approximately the same in each propagation direction, so as to make the effective refractive index of the thin film optical waveguide approximately isotropic.

A stabilized integrated optical circuit is presented. The stabilized integrated optical circuit includes at least one integrated optical chip formed from at least one inorganic material, a stabilizing-polarizable-fill gas, and an enclosure enclosing the at least one integrated optical chip and the stabilizing-polarizable-fill gas. At least one surface of the at least one integrated optical chip is modified by a treatment with at least one treatment gas selected to stabilize defects on the at least one surface. The stabilizing-polarizable-fill gas includes N.sub.2O and at least one polarizable material.

Integration method of a large-scale silicon-based lithium niobate film electro-optic modulator array. By using the method, the difficulty of a fabrication process of a lithium niobate crystal layer is reduced, requirements on precision of bonding lithium niobate and silicon is reduced, and fabrication and bonding of the large-scale array lithium niobate crystal layer can be completed at one time, so that production efficiency of the silicon-based lithium niobate film electro-optic modulator array is greatly improved; through design and optimization of the structure of the silicon crystal layers, light can be naturally alternated and mutually transmitted in silicon waveguides and lithium niobate waveguides, and a high-performance electro-optic modulation effect of the lithium niobate film is achieved.

Low loss fiber-to-chip interfaces for lithium niobate photonic integrated circuits are provided. An optical circuit includes a waveguide comprising an electro-optical material. The waveguide includes an elevated ridge and a slab underlying the elevated ridge, the elevated ridge and the slab extending along a central axis toward an optical interface. The elevated ridge and the slab each have a plurality of cross-sections along the central axis, each cross-section having a width measured perpendicular to the central axis, wherein the width of elevated ridge is smaller than the width of the slab for every cross-section along the central axis. The elevated ridge includes a tapered portion having a first taper, wherein the cross-section of the elevated portion decreases along the central axis toward the optical interface. The slab includes a tapered portion having a second taper, wherein the cross-section of the slab decreases along the central axis toward the optical interface. The slab extends beyond the elevated ridge along the central axis to the optical interface.

A groove having any length is manufactured in a quartz-based waveguide chip without limitation of a chip size. A marker indicating a planned cutting line extending from a connection end surface of a quartz-based waveguide chip in an in-chip plane direction is formed in advance by processing a core layer of the waveguide of the quartz-based waveguide chip, an irradiation position of laser light is aligned with a position of a starting point of the marker in a state where quartz-based waveguide chip is placed on a stage, and a groove is manufactured in the connection end surface of the quartz-based waveguide chip by moving the stage in the extending direction of the marker while irradiating the quartz-based waveguide chip with the laser light from an upper side.

Photonic integrated circuits utilizing interferometric effects, such as wavelength multiplexers/demultiplexers, include a free-space coupling region having two core layers that have thermo-optic coefficients of opposite sign. The two core layers are configured to provide athermal or nearly-athermal operation. Described examples include integrated array waveguide grating devices and integrated echelle grating devices. Example material systems include LNOI and SOI.

An integrated optical device includes a substrate. A waveguide includes a lithium niobate. A TiO.sub.2 coating is disposed at least in part over a longitudinal surface of the waveguide as a coated waveguide supported by the substrate. A silicon oxide substantially can cover and surround the waveguide in cross section over a longitudinal direction of said waveguide as an optical cladding. A method for substantially eliminating optical damage in lithium niobate devices is also described.

An optical device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element, fabricated on a planarized top surface of the first element, comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure, positioned such that a top surface of the intermediate structure underlies a bottom surface of the passive waveguide structure. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and the second optical mode. Mutual alignments of the first, second and third elements are defined using lithographic alignment marks.

An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.