A method includes providing a sacrificial wafer, contacting the sacrificial wafer to a photonic device wafer, and bonding the sacrificial wafer to the photonic device wafer. The sacrificial wafer includes a substrate and an electro-optical material strip disposed within a dielectric matrix. The photonic device wafer includes a photonic device die, and the electro-optical material strip is disposed proximate to the photonic device die. A photonic device structure includes a photonic device wafer and a sacrificial wafer. The photonic device structure includes a device wafer substrate and a photonic device die fabricated in a device wafer dielectric layer. The sacrificial wafer includes a sacrificial wafer substrate and an electro-optical material strip embedded in a sacrificial wafer dielectric matrix. The sacrificial wafer dielectric matrix is bonded to the device wafer dielectric layer, and the electro-optical material strip is disposed proximate to the photonic device die.

Various embodiments provide for systems and techniques for the successful fabrication of metal oxide (TMO)-on-glass layer stacks via direct deposition. The resulting samples feature epitaxial, strontium titanate (STO) or barium titanate (BTO) films on silicon dioxide (SiO.sub.2) layers, forming STO- or BTO-buffered SiO.sub.2 pseudo-substrates. As the integration of TMO films on silicon rely on an STO or BTO buffer layer, a wide variety of TMO-based integrated devices (e.g., circuits, waveguides, etc.) can be fabricated from the TMO-on-glass platform of the present technology. Moreover, the STO, or the BTO, survives the fabrication process without a corresponding degradation of crystalline quality, as evidenced by various objective measures.