A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region the includes a bulge region.

Embodiments described herein relate to a large area lens-free imaging device. One example is a lens-free device for imaging one or more objects. The lens-free device includes a light source positioned for illuminating at least one object. The lens-free device also includes a detector positioned for recording interference patterns of the illuminated at least one object. The light source includes a plurality of light emitters that are positioned and configured to create a controlled light wavefront for performing lens-free imaging.

A waveguide grating antenna apparatus includes a substrate layer, an asymmetric waveguide array layer upon the substrate layer, and a waveguide grating array layer formed above the asymmetric waveguide array layer. The waveguide array layer is composed of two forms of waveguide structures arranged in parallel. Each waveguide of the first form extends continuously, has a first width, and is laterally separated from each adjacent waveguide of the first form by a gap distance. Each waveguide of the second form extends parallel to and between adjacent waveguides of the first form within the first gap distance and is narrower than each of the first width and the gap distance. Pairs of the second form are closer to lateral sides of a first alternating set of the first form. The waveguide grating is composed of adjacent, separated elements extending axially along each waveguide of the first form.

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.

Embodiments herein describe a focal polarization displacer with a birefringent crystal disposed within the focal region of a lens. The birefringent crystal separates optical signals into at least two separate signals based on having different polarization states and an optical axis of the birefringent crystal is set so that focal points of the two separate signals are at an output surface of the polarization displacer where the two separate signals are output from the polarization displacer. This output surface can be a surface of the birefringent crystal or a surface of additional layer coupled to the crystal such as a polarization rotator or dielectric layer.

A photonic integrated circuit device can comprise one or more layers having different refraction indices that cause optical coupling issues and losses from layer variations. A film of material can be applied to a layer of the photonic integrated circuit to avoid the issues to increase the optical bandwidth of the photonic integrated circuit device and decrease sensitivity to manufacturing and design processes.

Aspects of the present disclosure are directed to configurations of compact ultra-low loss integrated photonics-based waveguides for optical gyroscope applications, and the methods of fabricating those waveguides for ease of large scale manufacturing. Four main process flows are described: (1) process flow based on a repeated sequence of oxide deposition and anneal; (2) chemical-mechanical polishing (CMP)-based process flow followed by wafer bonding; (3) Damascene process flow followed by oxide deposition and anneal, or wafer bonding; and (4) CMP-based process flows followed by oxide deposition. Any combination of these process flows may be adopted to meet the end goal of fabricating optical gyroscope waveguides in one or more layers on a silicon substrate using standard silicon fabrication technologies.

A first waveguide and a second waveguide including a first layer and a second layer are provided. In a first longitudinal segment, the first layer gradually approaches a first waveguide in a first transverse direction. In a second longitudinal segment, the first and second waveguides are longitudinally oriented. In a third longitudinal segment, the first layer includes a length portion having a width in the first transverse direction that gradually decreases along the third longitudinal segment, and the second layer includes a length portion having a width in the first transverse direction that gradually increases along the third longitudinal segment.

An environmentally protected PIC, including an InP-based substrate having a first surface that is at least partially provided with an InP-based optical waveguide, and a dielectric protective layer arranged to cover at least the first surface of the InP-based substrate and the InP-based optical waveguide. The dielectric protective layer is configured to protect said PIC from environmental contaminants, to enable confinement of optical radiation in the dielectric protective layer in at least one direction that is transverse to a direction of propagation of the optical radiation, and to allow exchange of the optical radiation between the InP-based optical waveguide and the dielectric protective layer. An opto-electronic system including PIC.